component

PDTC114YU-QX

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PDTC114YU-QX

Nexperia · Bipolar (BJT) · SOT-323-3

PDTC114YU-QX from Nexperia, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I input Input (base) of the NPN resistor-equipped transistor, connected through built-in bias resistor R1 = 10 kΩ (7 to 13 kΩ), with a positive input voltage limit of 40 V and negative limit of -6 V.
2 GND power_in Ground (emitter) of the transistor, with R2 = 47 kΩ connected between it and the base.
3 O passive Output (collector), rated for VCEO of 50 V and output current of 100 mA maximum.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-emitter voltage VCEO 50 V open base 1
output current IO 100 mA 1
bias resistor 1 (input) R1 7 10 13 kΩ see Section 11 test information 4
bias resistor ratio R2/R1 3.7 4.7 5.7 see Section 11 test information 4
collector-base voltage VCBO 50 V open emitter 2
collector-emitter voltage VCEO 50 V open base 2
emitter-base voltage VEBO 6 V open collector 2
input voltage positive VI 40 V positive 2
input voltage negative VI -6 V negative 2
output current IO 100 mA 2
total power dissipation Ptot 200 mW Tamb ≤ 25 °C 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air 3
collector-base breakdown voltage V(BR)CBO 50 V IC = 100 µA; IE = 0 A; Tamb = 25 °C 4
collector-emitter breakdown voltage V(BR)CEO 50 V IC = 2 mA; IB = 0 A; Tamb = 25 °C 4
collector-base cut-off current ICBO 100 nA VCB = 50 V; IE = 0 A; Tamb = 25 °C 4
collector-emitter cut-off current ICEO 100 nA VCE = 30 V; IB = 0 A; Tamb = 25 °C 4
collector-emitter cut-off current ICEO 5 µA VCE = 30 V; IB = 0 A; Tj = 150 °C 4
emitter-base cut-off current IEBO 150 µA VEB = 5 V; IC = 0 A; Tamb = 25 °C 4
DC current gain hFE 100 VCE = 5 V; IC = 5 mA; Tamb = 25 °C 4
collector-emitter saturation voltage VCEsat 100 mV IC = 5 mA; IB = 0.25 mA; Tamb = 25 °C 4
off-state input voltage VI(off) 0.7 0.5 V VCE = 5 V; IC = 100 µA; Tamb = 25 °C 4
on-state input voltage VI(on) 1.4 0.8 V VCE = 0.3 V; IC = 1 mA; Tamb = 25 °C 4
collector capacitance Cc 2.5 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 4
transition frequency fT 230 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C 4

CAD (KiCad official)

  • Symbol: PDTC114YU-QX
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: pdtc114yu-qx-etched.step / pdtc114yu-qx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pdtc114yu-qx.step / pdtc114yu-qx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (10 pp, sha256 53bfc7b268141ee2, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF