component

PDTC114ET-QR

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PDTC114ET-QR

Nexperia · Bipolar (BJT) · SOT-23

PDTC114ET-QR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I input Input (base) of the built-in bias network (R1 = 10 kΩ, R2 = 10 kΩ); the datasheet limits input voltage to 40 V positive and -10 V negative.
2 GND power_in Ground (emitter) pin, the common reference for the transistor and the bias resistors.
3 O output Output (collector) pin; the datasheet rates the output current IO at 100 mA maximum.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Bias resistor 1 (R1) R1 7 10 13 kΩ 5
Bias resistor ratio (R2/R1) R2/R1 0.8 1 1.2 5
DC current gain hFE 30 VCE = 5 V; IC = 5 mA; Tamb = 25 °C 5
Collector-base breakdown voltage V(BR)CBO 50 V IC = 100 µA; IE = 0 A; Tamb = 25 °C 5
Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 2 mA; IB = 0 A; Tamb = 25 °C 5
Collector-base cut-off current ICBO 100 nA VCB = 50 V; IE = 0 A; Tamb = 25 °C 5
Collector-emitter cut-off current ICEO 100 nA VCE = 30 V; IB = 0 A; Tamb = 25 °C 5
Collector-emitter cut-off current ICEO 5 µA VCE = 30 V; IB = 0 A; Tj = 150 °C 5
Emitter-base cut-off current IEBO 400 µA VEB = 5 V; IC = 0 A; Tamb = 25 °C 5
Collector-emitter saturation voltage VCEsat 100 mV IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C 5
Off-state input voltage VI(off) 1.1 0.8 V VCE = 5 V; IC = 100 µA; Tamb = 25 °C 5
On-state input voltage VI(on) 2.5 1.8 V VCE = 0.3 V; IC = 10 mA; Tamb = 25 °C 5
Collector capacitance Cc 2.5 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 5
Collector-base voltage VCBO 50 V open emitter 3
Collector-emitter voltage VCEO 50 V open base 3
Emitter-base voltage VEBO 10 V open collector 3
Input voltage positive VI 40 V positive 3
Input voltage negative VI -10 V negative 3
Output current IO 100 mA 3
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air 4

CAD (KiCad official)

  • Symbol: PDTC114ET-QR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pdtc114et-qr-etched.step / pdtc114et-qr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pdtc114et-qr.step / pdtc114et-qr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 3baa3271fd57e5a2, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF