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PDTA124XU

Public Made by Adom

by adom

Nexperia Digital Transistors, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PDTA124XU

Nexperia · Digital Transistors · SOT-323-3

PDTA124XU from Nexperia, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I input Input (base) of the PNP resistor-equipped transistor, connected through built-in bias resistor R1 (22 kΩ typ, 15.4 to 28.6 kΩ); input voltage limits are -40 V to 7 V.
2 G power_in GND (emitter) of the transistor, reference for the input and output; emitter-base voltage rating is -7 V max (open collector).
3 O passive Output (collector) of the transistor with VCEO of -50 V max and output current of -100 mA max.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
bias resistor 1 (input) R1 15.4 22 28.6 kΩ 3
bias resistor ratio R2/R1 1.7 2.1 2.6 Tamb = 25 °C 3
DC current gain hFE 80 VCE = -5 V; IC = -5 mA; Tamb = 25 °C 3
on-state input voltage VI(on) -2 -1.1 V VCE = -0.3 V; IC = -2 mA; Tamb = 25 °C 3
off-state input voltage VI(off) -0.8 -0.5 V VCE = -5 V; IC = -100 µA; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat -150 mV IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C 3
collector-base cut-off current ICBO -100 nA VCB = -50 V; IE = 0 A; Tamb = 25 °C 3
collector-emitter cut-off current ICEO -100 nA VCE = -30 V; IB = 0 A; Tamb = 25 °C 3
collector-emitter cut-off current ICEO -5 µA VCE = -30 V; IB = 0 A; Tj = 150 °C 3
emitter-base cut-off current IEBO -120 µA VEB = -5 V; IC = 0 A; Tamb = 25 °C 3
collector capacitance Cc 3 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 3
collector-base voltage VCBO -50 V open emitter 2
collector-emitter voltage VCEO -50 V open base 2
emitter-base voltage VEBO -7 V open collector 2
input voltage VI -40 7 V 2
output current IO -100 mA 2
peak collector current ICM -100 mA 2
total power dissipation Ptot 200 mW Tamb ≤ 25 °C [1] 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 625 K/W Tamb ≤ 25 °C [1] 3

CAD (KiCad official)

  • Symbol: PDTA124XU
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: pdta124xu-etched.step / pdta124xu-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pdta124xu.step / pdta124xu.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 ad62132491bd4f8c, retrieved 2026-10-16, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF