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Contents

README

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PDTA124ET-QR

Nexperia · Digital Transistors · SOT-23

PDTA124ET-QR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I input Input pin (base) that drives the built-in transistor through bias resistor R1, which is 22 kΩ with a 15.4 to 28.6 kΩ range.
2 GND power_in Ground pin (emitter) of the built-in transistor.
3 O output Output pin (collector) of the built-in transistor, which is rated for an output current of -100 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO -50 V open emitter 3
collector-emitter voltage VCEO -50 V open base 3
emitter-base voltage VEBO -10 V open collector 3
input voltage VI 10 V positive 3
input voltage VI -40 V negative 3
output current IO -100 mA 3
total power dissipation Ptot 250 mW Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -65 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; device mounted on FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint 4
collector-base breakdown voltage V(BR)CBO -50 V IC = -100 µA; IE = 0 A; Tamb = 25 °C 5
collector-emitter breakdown voltage V(BR)CEO -50 V IC = -2 mA; IB = 0 A; Tamb = 25 °C 5
collector-base cut-off current ICBO -100 nA VCB = -50 V; IE = 0 A; Tamb = 25 °C 5
collector-emitter cut-off current ICEO -100 nA VCE = -30 V; IB = 0 A; Tamb = 25 °C 5
collector-emitter cut-off current ICEO -5 µA VCE = -30 V; IB = 0 A; Tj = 150 °C 5
emitter-base cut-off current IEBO -180 µA VEB = -5 V; IC = 0 A; Tamb = 25 °C 5
DC current gain hFE 60 VCE = -5 V; IC = -5 mA; Tamb = 25 °C 5
collector-emitter saturation voltage VCEsat -150 mV IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C 5
off-state input voltage VI(off) -1.1 -0.8 V VCE = -5 V; IC = -100 µA; Tamb = 25 °C 5
on-state input voltage VI(on) -2.5 -1.7 V VCE = -0.3 V; IC = -5 mA; Tamb = 25 °C 5
bias resistor 1 (input) R1 15.4 22 28.6 kΩ 5
bias resistor ratio R2/R1 0.8 1 1.2 5
collector capacitance Cc 3 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 5

CAD (KiCad official)

  • Symbol: PDTA124ET-QR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pdta124et-qr-etched.step / pdta124et-qr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pdta124et-qr.step / pdta124et-qr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 f746d0dfca32756c, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF