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PCP1403-TD-H

Public Made by Adom

by adom

onsemi MOSFETs, SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PCP1403-TD-H

onsemi · MOSFETs · SOT-89-3

PCP1403-TD-H from onsemi, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated at ±20 V (VGSS), and the threshold is 1.2 to 2.6 V at VDS=10V, ID=1mA.
2 Drain passive Drain terminal of the N-channel MOSFET; drain-to-source voltage is rated at 60 V (VDSS) and DC drain current at 4.5 A, with pulsed drain current of 18 A (PW≤10μs, duty cycle≤1%).
3 Source passive Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-specific rating for this terminal beyond the device maximum ratings.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDSS 60 V 1
Gate to Source Voltage VGSS -20 20 V 1
Drain Current (DC) ID 4.5 A 1
Drain Current (Pulse) IDP 18 A PW≤10μs, duty cycle≤1% 1
Power Dissipation PD 3.5 W Tc=25°C 1
Power Dissipation PD 1.3 W When mounted on ceramic substrate (600mm2×0.8mm) 1
Junction Temperature Tj 150 °C 1
Storage Temperature Tstg -55 150 °C 1
Drain to Source Breakdown Voltage V(BR)DSS 60 V ID=1mA, VGS=0V 1
Zero-Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 1
Gate to Source Leakage Current IGSS -10 10 μA VGS=±16V, VDS=0V 1
Gate Threshold Voltage VGS(th) 1.2 2.6 V VDS=10V, ID=1mA 1
Static Drain to Source On-State Resistance RDS(on)1 92 117 mΩ ID=2A, VGS=10V 1
Static Drain to Source On-State Resistance RDS(on)2 120 168 mΩ ID=1A, VGS=4.5V 1
Static Drain to Source On-State Resistance RDS(on)3 132 185 mΩ ID=1A, VGS=4V 1
Forward Diode Voltage VSD 0.88 1.2 V IS=4.5A, VGS=0V 2
Forward Transconductance gFS 2.5 S VDS=10V, ID=2A 1
Input Capacitance Ciss 310 pF VDS=20V, f=1MHz 1
Output Capacitance Coss 40 pF 1
Reverse Transfer Capacitance Crss 25 pF 1
Turn-ON Delay Time td(on) 5.6 ns See specified Test Circuit 2
Rise Time tr 7 ns 2
Turn-OFF Delay Time td(off) 26 ns 2
Fall Time tf 14 ns 2
Total Gate Charge Qg 6.7 nC VDS=30V, VGS=10V, ID=4.5A 2
Gate to Source Charge Qgs 1 nC 2
Gate to Drain “Miller” Charge Qgd 1.6 nC 2
Junction to Case Steady State RθJC 35.7 °C /W 1
Junction to Ambient RθJA 96.1 °C /W When mounted on ceramic substrate (600mm2×0.8mm) 1

CAD (KiCad official)

  • Symbol: PCP1403-TD-H
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3 (KiCad packages3D, STEP)
  • 3D model files: pcp1403-td-h-etched.step / pcp1403-td-h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pcp1403-td-h.step / pcp1403-td-h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 1d3f098d7cdda1aa, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF