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PC817X4NSZ2B

Sharp Microelectronics · Transistor, Photovoltaic Output Optoisolators · DIP-4

PC817X4NSZ2B from Sharp Microelectronics, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode input Anode of the input LED; the datasheet rates forward current IF at 50 mA maximum, peak forward current IFM at 1 A (pulse width ≦100 μs, duty ratio 0.001), and reverse voltage VR at 6 V.
2 Cathode passive Cathode of the input LED, which is the return terminal for the LED drive current; the reverse voltage rating of the input LED is 6 V.
3 Emitter passive Emitter of the output phototransistor; the emitter-collector voltage VECO is rated at 6 V maximum.
4 Collector passive Collector of the output phototransistor; the collector-emitter voltage VCEO is rated at 80 V maximum and collector current Ic at 50 mA maximum.

Key specifications

Parameter Value
Manufacturer Sharp Microelectronics
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward voltage VF 1.2 1.4 V IF=20mA 6
Peak forward voltage VFM 3 V IFM=0.5A 6
Reverse current IR 10 μA VR=4V 6
Terminal capacitance Ct 30 250 pF V=0, f=1kHz 6
Dark current ICEO 100 nA VCE=50V, IF=0 6
Collector-emitter breakdown voltage BVCEO 80 V Ic=0.1mA IF=0 6
Emitter-collector breakdown voltage BVECO 6 V IE=10μA, IF=0 6
Collector current (family range; rank D 15 to 30 mA is printed only for PC817X4NSZ1B) Ic 2.5 30 mA IF=5mA, VCE=5V 6
Collector-emitter saturation voltage VCE(sat) 0.1 0.2 V IF=20mA Ic=1mA 6
Floating capacitance Cf 0.6 1 pF V=0, f=1MHz 6
Rise time tr 4 18 μs VCE=2V Ic=2mA RL=100Ω 6
Fall time tf 3 18 μs VCE=2V Ic=2mA RL=100Ω 6
Forward current IF 50 mA 6
Peak forward current IFM 1 A Pulse width ≦100μs, Duty ratio : 0.001 6
Reverse voltage VR 6 V 6
Power dissipation (diode) P 70 mW 6
Collector-emitter voltage VCEO 80 V 6
Emitter-collector voltage VECO 6 V 6
Collector current Ic 50 mA 6
Collector power dissipation Pc 150 mW 6
Total power dissipation Ptot 200 mW 6
Operating temperature Topr -30 100 ℃ 6
Storage temperature Tstg -55 125 ℃ 6
Isolation voltage Viso(rms) 5 kV AC for 1 min, 40 to 60%RH 6
Soldering temperature Tsol 270 ℃ For 10 s 6

CAD (KiCad official)

  • Symbol: PC817X4NSZ2B
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: pc817x4nsz2b-etched.step / pc817x4nsz2b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pc817x4nsz2b.step / pc817x4nsz2b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Sharp Microelectronics datasheet (12 pp, sha256 c127f176b0f271d9, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF