component
PC817B-MS
Public Made by Adomby adom
MSKSEMI Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
PC817B-MS
MSKSEMI · Transistor, Photovoltaic Output Optoisolators · DIP-4
PC817B-MS from MSKSEMI, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | input | Anode of the input GaAs LED; forward current IF max 50 mA, reverse voltage VR max 6 V, VF typ 1.20 V at IF=20 mA. |
| 2 | Cathode | input | Cathode of the input GaAs LED, returned to the input-side ground; IF max 50 mA, VR max 6 V. |
| 3 | Emitter | passive | Emitter of the NPN phototransistor output; VECO (emitter-collector) max 6 V. |
| 4 | Collector | passive | Collector of the NPN phototransistor output; VCEO max 35 V, collector current IC max 50 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward current | IF | 50 | mA | 3 | |||
| Reverse voltage | VR | 6 | V | 3 | |||
| Power consumption (input) | P | 70 | mW | 3 | |||
| Collector-emitter voltage | VCEO | 35 | V | 3 | |||
| Emitter-collector voltage | VECO | 6 | V | 3 | |||
| Collector current | IC | 50 | mA | 3 | |||
| Power consumption (output) | PC | 150 | mW | 3 | |||
| Total power consumption | Ptot | 200 | mW | 3 | |||
| Insulation voltage | Viso | 5000 | Vrms | AC test, 1 minute, humidity 40-60% | 3 | ||
| Max insulation voltage | VIOTM | 6000 | V | 3 | |||
| Rated impulse insulation voltage | VIORM | 630 | V | 3 | |||
| Working temperature | Topr | -55 | 110 | ℃ | 3 | ||
| Storage temperature | Tstg | -55 | 125 | ℃ | 3 | ||
| Soldering temperature | Tsol | 260 | ℃ | 10 seconds soldering time | 3 | ||
| Forward voltage | VF | 1.2 | 1.4 | V | IF=20mA | 3 | |
| Reverse current | IR | 5 | uA | VR=5V | 3 | ||
| Collector capacitance | Ct | 30 | 250 | pF | V=0, f=1MHz | 3 | |
| Collector to emitter dark current | ICEO | 150 | nA | VCE=70V, IF=0mA | 3 | ||
| Collector-emitter breakdown voltage | BVCEO | 70 | V | IC=0.1mA, IF=0mA | 3 | ||
| Emitter-collector breakdown voltage | BVECO | 6 | V | IE=10μA, IF=0mA | 3 | ||
| Current conversion ratio (grade B) | CTR | 130 | 260 | % | IF=5mA, VCE=5V | 4 | |
| Collector-emitter saturation voltage | VCE(sat) | 0.1 | 0.2 | V | IF=20mA, IC=1mA | 4 | |
| Capacitance (input-output) | Cf | 0.6 | 1 | pF | V=0, f=1MHz | 4 | |
| Rise time | tr | 6 | 18 | μs | VCE=2V, IC=2mA, RL=100Ω | 4 | |
| Fall time | tf | 5 | 18 | μs | 4 |
CAD (KiCad official)
- Symbol:
PC817B-MS - Footprint:
Package_DIP:DIP-4_W7.62mm - 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files:
pc817b-ms-etched.step/pc817b-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pc817b-ms.step/pc817b-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (9 pp, sha256
13e738f0b46732ff, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PC817B-MS
**MSKSEMI** · Transistor, Photovoltaic Output Optoisolators · DIP-4
PC817B-MS from MSKSEMI, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | input | Anode of the input GaAs LED; forward current IF max 50 mA, reverse voltage VR max 6 V, VF typ 1.20 V at IF=20 mA. |
| 2 | Cathode | input | Cathode of the input GaAs LED, returned to the input-side ground; IF max 50 mA, VR max 6 V. |
| 3 | Emitter | passive | Emitter of the NPN phototransistor output; VECO (emitter-collector) max 6 V. |
| 4 | Collector | passive | Collector of the NPN phototransistor output; VCEO max 35 V, collector current IC max 50 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward current | IF | | | 50 | mA | | 3 |
| Reverse voltage | VR | | | 6 | V | | 3 |
| Power consumption (input) | P | | | 70 | mW | | 3 |
| Collector-emitter voltage | VCEO | | | 35 | V | | 3 |
| Emitter-collector voltage | VECO | | | 6 | V | | 3 |
| Collector current | IC | | | 50 | mA | | 3 |
| Power consumption (output) | PC | | | 150 | mW | | 3 |
| Total power consumption | Ptot | | | 200 | mW | | 3 |
| Insulation voltage | Viso | | | 5000 | Vrms | AC test, 1 minute, humidity 40-60% | 3 |
| Max insulation voltage | VIOTM | | | 6000 | V | | 3 |
| Rated impulse insulation voltage | VIORM | | | 630 | V | | 3 |
| Working temperature | Topr | -55 | | 110 | ℃ | | 3 |
| Storage temperature | Tstg | -55 | | 125 | ℃ | | 3 |
| Soldering temperature | Tsol | | | 260 | ℃ | 10 seconds soldering time | 3 |
| Forward voltage | VF | | 1.2 | 1.4 | V | IF=20mA | 3 |
| Reverse current | IR | | | 5 | uA | VR=5V | 3 |
| Collector capacitance | Ct | | 30 | 250 | pF | V=0, f=1MHz | 3 |
| Collector to emitter dark current | ICEO | | | 150 | nA | VCE=70V, IF=0mA | 3 |
| Collector-emitter breakdown voltage | BVCEO | 70 | | | V | IC=0.1mA, IF=0mA | 3 |
| Emitter-collector breakdown voltage | BVECO | 6 | | | V | IE=10μA, IF=0mA | 3 |
| Current conversion ratio (grade B) | CTR | 130 | | 260 | % | IF=5mA, VCE=5V | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | 0.1 | 0.2 | V | IF=20mA, IC=1mA | 4 |
| Capacitance (input-output) | Cf | | 0.6 | 1 | pF | V=0, f=1MHz | 4 |
| Rise time | tr | | 6 | 18 | μs | VCE=2V, IC=2mA, RL=100Ω | 4 |
| Fall time | tf | | 5 | 18 | μs | | 4 |
## CAD (KiCad official)
- Symbol: `PC817B-MS`
- Footprint: `Package_DIP:DIP-4_W7.62mm`
- 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files: `pc817b-ms-etched.step` / `pc817b-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pc817b-ms.step` / `pc817b-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603066765706338304) (9 pp, sha256 `13e738f0b46732ff`, retrieved 2026-10-18, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pc817b-ms-datasheet.pdf)