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Contents

README

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PC817B-HXY

HXY MOSFET · Transistor Output Optocoupler · DIP-4

PC817B-HXY from HXY MOSFET, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode passive Anode of the input GaAs LED; forward current IF max 50 mA, reverse voltage VR max 6 V.
2 Cathode passive Cathode of the input GaAs LED, returned to the input-side ground; forward voltage VF typ 1.20 V, max 1.40 V at IF=20 mA.
3 Emitter passive Emitter of the output NPN phototransistor; VECO max 6 V.
4 Collector passive Collector of the output NPN phototransistor; VCEO max 35 V and IC max 50 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DIP-4
Category Optocouplers/Photocouplers
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Current transfer ratio (PC817B) CTR 130 260 % IF=5mA, VCE=5V, Ta=25℃ 3
Forward voltage VF 1.2 1.4 V IF=20mA 2
Reverse current IR 5 uA VR=5V 2
Collector capacitance Ct 30 250 pF V=0, f=1MHz 2
Collector-emitter dark current ICEO 150 nA VCE=70V, IF=0mA 2
Collector-emitter breakdown voltage BVCEO 70 V IC=0.1mA, IF=0mA 2
Emitter-collector breakdown voltage BVECO 6 V IE=10μA, IF=0mA 2
Collector-emitter saturation voltage VCE(sat) 0.1 0.2 V IF=20mA, IC=1mA 3
Capacitance (input-output) Cf 0.6 1 pF V=0, f=1MHz 3
Transforming frequency fc 80 kHz VCE=5V, IC=2mA, RL=100Ω, -3dB 3
Rise time tr 6 18 μs VCE=2V, IC=2mA, RL=100Ω 3
Fall time tf 5 18 μs VCE=2V, IC=2mA, RL=100Ω 3
Forward current IF 50 mA Ta=25℃ 2
Reverse voltage VR 6 V Ta=25℃ 2
Input power dissipation P 70 mW Ta=25℃ 2
Collector-emitter voltage VCEO 35 V Ta=25℃ 2
Emitter-collector voltage VECO 6 V Ta=25℃ 2
Collector current IC 50 mA Ta=25℃ 2
Collector power dissipation PC 150 mW Ta=25℃ 2
Total power dissipation Ptot 200 mW Ta=25℃ 2
Isolation voltage Viso 5000 Vrms AC test, 1 minute, humidity 40~60% 2
Max insulation voltage VIOTM 6000 V 2
Rated impulse insulation voltage VIORM 630 V 2
Operating temperature Topr -55 110 ℃ 2
Storage temperature Tstg -55 125 ℃ 2
Soldering temperature Tsol 260 ℃ soldering time 10 seconds 2

CAD (KiCad official)

  • Symbol: PC817B-HXY
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: pc817b-hxy-etched.step / pc817b-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pc817b-hxy.step / pc817b-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 c489fc2960a78cc7, retrieved 2026-10-22, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF