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PC357N1J000F

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Sharp Microelectronics Transistor, Photovoltaic Output Optoisolators, SOP-4-2.54mm. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PC357N1J000F

Sharp Microelectronics · Transistor, Photovoltaic Output Optoisolators · SOP-4-2.54mm

PC357N1J000F from Sharp Microelectronics, in a SOP-4-2.54mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode input IRED anode; forward current IF is limited to 50 mA DC and peak forward current IFM to 1 A (pulse width ≤100µs, duty ratio 0.001).
2 Cathode passive IRED cathode; reverse voltage VR is limited to 6 V.
3 Emitter passive Phototransistor emitter; emitter-collector voltage VECO is limited to 6 V.
4 Collector passive Phototransistor collector; collector-emitter voltage VCEO is limited to 80 V and collector current IC to 50 mA.

Key specifications

Parameter Value
Manufacturer Sharp Microelectronics
Package SOP-4-2.54mm
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage BVCEO 80 V IC=0.1mA, IF=0 4
Emitter-collector breakdown voltage BVECO 6 V IE=10µA, IF=0 4
Collector current IC 2.5 5 30 mA IF=5mA, VCE=5V 4
Collector dark current ICEO 100 nA VCE=50V, IF=0 4
Forward voltage VF 1.2 1.4 V IF=20mA 4
Reverse current IR 10 µA VR=4V 4
Terminal capacitance Ct 30 250 pF V=0, f=1kHz 4
Collector-emitter saturation voltage VCE (sat) 0.1 0.2 V IF=20mA, IC=1mA 4
Floating capacitance Cf 0.6 1 pF V=0, f=1MHz 4
Rise time tr 4 18 µs VCE=2V, IC=2mA, RL=100Ω 4
Fall time tf 3 18 µs VCE=2V, IC=2mA, RL=100Ω 4
Forward current IF 50 mA Ta=25˚C 4
Peak forward current IFM 1 A Pulse width≤100µs, Duty ratio : 0.001 4
Power dissipation P 70 mW Ta=25˚C 4
Reverse voltage VR 6 V Ta=25˚C 4
Collector-emitter voltage VCEO 80 V Ta=25˚C 4
Emitter-collector voltage VECO 6 V Ta=25˚C 4
Collector current IC 50 mA Ta=25˚C 4
Collector power dissipation PC 150 mW Ta=25˚C 4
Total power dissipation Ptot 170 mW Ta=25˚C 4
Isolation voltage Viso (rms) 3.75 kV 40 to 60%RH, AC for 1 minute, f=60Hz 4
Operating temperature Topr -30 100 ˚C 4
Storage temperature Tstg -40 125 ˚C 4
Soldering temperature Tsol 260 ˚C For 10s 4

CAD (KiCad official)

  • Symbol: PC357N1J000F
  • Footprint: Package_SO:SOP-4_3.8x4.1mm_P2.54mm
  • 3D model: SOP-4-2.54mm (KiCad packages3D, STEP)
  • 3D model files: pc357n1j000f-etched.step / pc357n1j000f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pc357n1j000f.step / pc357n1j000f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Sharp Microelectronics datasheet (14 pp, sha256 8baf6956912479be, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF