# PBSS5480XZ

**Nexperia** · Bipolar (BJT) · SOT-89

PBSS5480XZ from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the PNP BISS transistor, with the emitter-base voltage limited to −5 V (VEBO). |
| 2 | C | passive | Collector terminal, which is also the collector pad for heat transfer; collector current is limited to −4 A DC (−10 A peak, tp ≤ 1 ms). |
| 3 | B | passive | Base terminal, with base current limited to −1 A DC (−2 A peak, tp ≤ 1 ms). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage (open emitter) | VCBO |  |  | -80 | V | open emitter | 4 |
| collector-emitter voltage (open base) | VCEO |  |  | -80 | V | open base | 4 |
| emitter-base voltage (open collector) | VEBO |  |  | -5 | V | open collector | 4 |
| collector current (DC) | IC |  |  | -4 | A | note 1 | 4 |
| peak collector current | ICM |  |  | -10 | A | tp ≤ 1 ms or limited by Tj(max) | 4 |
| repetitive peak collector current | ICRP |  |  | -6 | A | tp ≤ 10 ms; δ ≤ 0.1 | 4 |
| base current (DC) | IB |  |  | -1 | A |  | 4 |
| peak base current | IBM |  |  | -2 | A | tp ≤ 1 ms | 4 |
| total power dissipation | Ptot |  |  | 2.5 | W | Tamb ≤ 25 °C; notes 2 and 3 | 4 |
| total power dissipation | Ptot |  |  | 0.55 | W | Tamb ≤ 25 °C; note 3 | 4 |
| total power dissipation | Ptot |  |  | 1 | W | Tamb ≤ 25 °C; note 4 | 4 |
| total power dissipation | Ptot |  |  | 1.4 | W | Tamb ≤ 25 °C; note 1 | 4 |
| total power dissipation | Ptot |  |  | 1.6 | W | Tamb ≤ 25 °C; note 5 | 4 |
| storage temperature | Tstg | -65 |  | 150 | °C |  | 4 |
| junction temperature | Tj |  |  | 150 | °C |  | 4 |
| ambient temperature | Tamb | -65 |  | 150 | °C |  | 4 |
| collector-base cut-off current | ICBO |  |  | -100 | nA | VCB = −80 V; IE = 0 A | 8 |
| collector-base cut-off current | ICBO |  |  | -50 | μA | VCB = −80 V; IE = 0 A; Tj = 150 °C | 8 |
| collector-emitter cut-off current | ICES |  |  | -100 | nA | VCE = −60 V; VBE = 0 V | 8 |
| emitter-base cut-off current | IEBO |  |  | -100 | nA | VEB = −5 V; IC = 0 A | 8 |
| DC current gain | hFE | 200 | 300 |  |  | VCE = −2 V; IC = −0.5 A | 8 |
| DC current gain | hFE | 180 | 280 |  |  | VCE = −2 V; IC = −1 A; note 1 | 8 |
| DC current gain | hFE | 150 | 240 |  |  | VCE = −2 V; IC = −2 A; note 1 | 8 |
| DC current gain | hFE | 80 | 150 |  |  | VCE = −2 V; IC = −4 A; note 1 | 8 |
| collector-emitter saturation voltage | VCEsat |  | -35 | -55 | mV | IC = −0.5 A; IB = −50 mA | 8 |
| collector-emitter saturation voltage | VCEsat |  | -70 | -105 | mV | IC = −1 A; IB = −50 mA | 8 |
| collector-emitter saturation voltage | VCEsat |  | -170 | -250 | mV | IC = −2 A; IB = −40 mA | 8 |
| collector-emitter saturation voltage | VCEsat |  | -220 | -340 | mV | IC = −4 A; IB = −200 mA; note 1 | 8 |
| collector-emitter saturation voltage | VCEsat |  | -250 | -380 | mV | IC = −5 A; IB = −500 mA; note 1 | 8 |
| equivalent on-resistance | RCEsat |  | 50 | 75 | mΩ | IC = −5 A; IB = −500 mA; note 1 | 8 |
| base-emitter saturation voltage | VBEsat |  | -770 | -850 | mV | IC = −0.5 A; IB = −50 mA | 8 |
| base-emitter saturation voltage | VBEsat |  | -810 | -900 | mV | IC = −1 A; IB = −50 mA | 8 |
| base-emitter saturation voltage | VBEsat |  | -930 | -1000 | mV | IC = −4 A; IB = −400 mA; note 1 | 8 |
| base-emitter turn-on voltage | VBEon |  | -760 | -850 | mV | VCE = −2 V; IC = −2 A | 8 |
| transition frequency | fT | 100 | 125 |  | MHz | IC = −0.1 A; VCE = −10 V; f = 100 MHz | 8 |
| collector capacitance | Cc |  | 60 | 90 | pF | VCB = −10 V; IE = ie = 0 A; f = 1 MHz | 8 |
| thermal resistance from junction to ambient in free air | Rth(j-a) |  | 50 |  | K/W | notes 1 and 2 | 6 |
| thermal resistance from junction to ambient in free air | Rth(j-a) |  | 225 |  | K/W | note 2 | 6 |
| thermal resistance from junction to ambient in free air | Rth(j-a) |  | 125 |  | K/W | note 3 | 6 |
| thermal resistance from junction to ambient in free air | Rth(j-a) |  | 90 |  | K/W | note 4 | 6 |
| thermal resistance from junction to ambient in free air | Rth(j-a) |  | 80 |  | K/W | note 5 | 6 |
| thermal resistance from junction to soldering point | Rth(j-s) |  | 16 |  | K/W |  | 6 |

## CAD (KiCad official)

- Symbol: `PBSS5480XZ`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `pbss5480xz-etched.step` / `pbss5480xz-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pbss5480xz.step` / `pbss5480xz.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PBSS5480XZ.pdf) (14 pp, sha256 `641e653005163aa6`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pbss5480xz-datasheet.pdf)