component
PBSS5240T
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| package.json | 24d ago |
| page.json | 17d ago |
| pbss5240t-etched.glb | 24d ago |
| pbss5240t-etched.step | 24d ago |
| pbss5240t-hero.glb | 24d ago |
| pbss5240t-hero.overlay.json | 24d ago |
| pbss5240t.glb | 24d ago |
| pbss5240t.kicad_mod | 24d ago |
| pbss5240t.kicad_sym | 24d ago |
| pbss5240t.lbr | 24d ago |
| pbss5240t.step | 24d ago |
| README.md | 17d ago |
PBSS5240T
Nexperia · Bipolar (BJT) · SOT-23
PBSS5240T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal; peak base current is limited to -300 mA (single pulse, tp ≤ 1 ms) per the limiting values. |
| 2 | E | passive | Emitter terminal; emitter-base voltage is limited to -5 V with the collector open (VEBO). |
| 3 | C | passive | Collector terminal; rated for collector current of -2 A (ICM -3 A peak) and collector-emitter voltage of -40 V with the base open (VCEO). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | -40 | V | open emitter | 2 | ||
| collector-emitter voltage | VCEO | -40 | V | open base | 2 | ||
| emitter-base voltage | VEBO | -5 | V | open collector | 2 | ||
| collector current | IC | -2 | A | 2 | |||
| peak collector current | ICM | -3 | A | 2 | |||
| peak base current | IBM | -300 | mA | single pulse; tp ≤ 1 ms | 2 | ||
| total power dissipation | Ptot | 300 | mW | Tamb ≤ 25 °C; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 2 | ||
| total power dissipation | Ptot | 480 | mW | [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 2 | ||
| junction temperature | Tj | 150 | °C | 2 | |||
| ambient temperature | Tamb | -65 | 150 | °C | 2 | ||
| storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 417 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 2 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 260 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 2 | ||
| collector-base breakdown voltage | V(BR)CBO | -40 | V | IC = -100 µA; IE = 0 A | 3 | ||
| collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC = -10 mA; IB = 0 A | 3 | ||
| emitter-base breakdown voltage (collector open) | V(BR)EBO | -5 | V | IE = -100 µA; IC = 0 A | 3 | ||
| collector-base cut-off current | ICBO | -100 | nA | VCB = -30 V; IE = 0 A; Tamb = 25 °C | 3 | ||
| collector-base cut-off current | ICBO | -50 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 3 | ||
| emitter-base cut-off current | IEBO | -100 | nA | VEB = -4 V; IC = 0 A; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 300 | 450 | VCE = -2 V; IC = -100 mA; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 260 | 350 | VCE = -2 V; IC = -500 mA; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 210 | 290 | VCE = -2 V; IC = -1 A; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 100 | 180 | VCE = -2 V; IC = -2 A; Tamb = 25 °C | 3 | ||
| collector-emitter saturation voltage | VCEsat | -55 | -100 | mV | IC = -100 mA; IB = -1 mA; Tamb = 25 °C | 3 | |
| collector-emitter saturation voltage | VCEsat | -70 | -110 | mV | IC = -500 mA; IB = -50 mA; Tamb = 25 °C | 3 | |
| collector-emitter saturation voltage | VCEsat | -140 | -225 | mV | IC = -750 mA; IB = -15 mA; Tamb = 25 °C | 3 | |
| collector-emitter saturation voltage | VCEsat | -240 | -350 | mV | IC = -2 A; IB = -200 mA; Tamb = 25 °C | 3 | |
| collector-emitter saturation resistance | RCEsat | 140 | 220 | mΩ | IC = -500 mA; IB = -50 mA; Tamb = 25 °C; [1] device mounted on PCB, single-sided copper, tin plated, standard footprint | 3 | |
| base-emitter saturation voltage | VBEsat | -1.1 | V | IC = -2 A; IB = -200 mA; Tamb = 25 °C | 3 | ||
| base-emitter turn-on voltage | VBEon | -0.75 | V | VCE = -2 V; IC = -100 mA; Tamb = 25 °C | 3 | ||
| transition frequency | fT | 100 | 200 | MHz | VCE = -10 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C | 3 | |
| collector capacitance | Cc | 23 | 28 | pF | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
PBSS5240T - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pbss5240t-etched.step/pbss5240t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss5240t.step/pbss5240t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (9 pp, sha256
40bcaa39747bf501, retrieved 2026-10-09, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).