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Contents

README

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PBSS5230T

Nexperia · Bipolar (BJT) · SOT-23

PBSS5230T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the PNP low VCEsat transistor (Table 2, page 2 pinning).
2 E passive Emitter terminal of the PNP low VCEsat transistor (Table 2, page 2 pinning).
3 C passive Collector terminal of the PNP low VCEsat transistor (Table 2, page 2 pinning); VCEO is -30 V maximum and IC is -2 A maximum.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -30 V open emitter 3
Collector-emitter voltage VCEO -30 V open base 3
Emitter-base voltage VEBO -5 V open collector 3
Collector current IC -2 A 3
Peak collector current ICM -3 A single pulse; tp ≤ 1 ms 3
Base current IB -300 mA 3
Total power dissipation Ptot 300 mW Tamb ≤ 25 °C; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint 3
Total power dissipation Ptot 480 mW Tamb ≤ 25 °C; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance junction to ambient Rth(j-a) 417 K/W [1] in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint 3
Thermal resistance junction to ambient Rth(j-a) 260 K/W [2] in free air; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 3
Collector-base cut-off current ICBO -100 nA VCB = -30 V; IE = 0 A; Tamb = 25 °C 4
Collector-base cut-off current ICBO -50 µA VCB = -30 V; IE = 0 A; Tj = 150 °C 4
Emitter-base cut-off current IEBO -100 nA VEB = -4 V; IC = 0 A; Tamb = 25 °C 4
DC current gain hFE 300 450 VCE = -2 V; IC = -100 mA; Tamb = 25 °C 4
DC current gain hFE 200 290 VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
DC current gain hFE 100 180 VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat -70 -110 mV IC = -500 mA; IB = -50 mA; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat -140 -225 mV IC = -1 A; IB = -50 mA; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat -240 -350 mV IC = -2 A; IB = -200 mA; Tamb = 25 °C 4
Collector-emitter saturation resistance RCEsat 160 220 mΩ IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
Base-emitter saturation voltage VBEsat -1.1 V IC = -2 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
Base-emitter turn-on voltage VBEon -0.75 V VCE = -2 V; IC = -100 mA; Tamb = 25 °C 4
Transition frequency fT 100 200 MHz VCE = -10 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C 4
Collector capacitance Cc 23 28 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 4

CAD (KiCad official)

  • Symbol: PBSS5230T
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pbss5230t-etched.step / pbss5230t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss5230t.step / pbss5230t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (10 pp, sha256 85e6e28d5130780b, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF