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PBSS5220T

Nexperia · Bipolar Transistors - BJT · SOT-23

PBSS5220T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the PNP low VCEsat transistor, as listed in the pinning table for the SOT23 package.
2 E passive Emitter terminal of the PNP low VCEsat transistor, as listed in the pinning table for the SOT23 package.
3 C passive Collector terminal of the PNP low VCEsat transistor, rated up to -20 V VCEO and -2 A IC per the limiting values.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO -20 V open emitter 2
collector-emitter voltage VCEO -20 V open base 2
emitter-base voltage VEBO -5 V open collector 2
collector current IC -2 A 2
peak collector current ICM -3 A single pulse; tp ≤ 1 ms 2
base current IB -300 mA 2
total power dissipation Ptot 300 mW Tamb ≤ 25 °C; FR4 PCB, standard footprint 2
total power dissipation Ptot 480 mW Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 1 cm2 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance junction to ambient Rth(j-a) 417 K/W in free air; FR4 PCB, standard footprint 2
thermal resistance junction to ambient Rth(j-a) 260 K/W in free air; FR4 PCB, mounting pad for collector 1 cm2 2
collector-base cut-off current ICBO -100 nA VCB = -20 V; IE = 0 A; Tamb = 25 °C 3
collector-base cut-off current ICBO -50 µA VCB = -20 V; IE = 0 A; Tj = 150 °C 3
emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 225 VCE = -2 V; IC = -100 mA; Tamb = 25 °C 3
DC current gain hFE 200 VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
DC current gain hFE 150 VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat -80 mV IC = -500 mA; IB = -50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed 3
collector-emitter saturation voltage VCEsat -150 mV IC = -1 A; IB = -50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed 3
collector-emitter saturation voltage VCEsat -250 mV IC = -2 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat -225 mV 3
collector-emitter saturation resistance RCEsat 113 mΩ IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter saturation voltage VBEsat -1.1 V IC = -2 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter turn-on voltage VBEon -1.2 V VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
transition frequency fT 100 MHz VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C 3
collector capacitance Cc 50 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: PBSS5220T
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pbss5220t-etched.step / pbss5220t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss5220t.step / pbss5220t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (10 pp, sha256 e72a374e8c8748e3, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF