component

PBSS5220T-QR

Public Made by Adom

by adom

Nexperia Bipolar (BJT), TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PBSS5220T-QR

Nexperia · Bipolar (BJT) · TO-236AB

PBSS5220T-QR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal; base current is limited to -300 mA (IB).
2 E passive Emitter terminal; emitter-base voltage is limited to -5 V (VEBO).
3 C passive Collector terminal; collector current is limited to -2 A continuous and -3 A peak (ICM, single pulse tp ≤ 1 ms).

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO -20 V open emitter 2
collector-emitter voltage VCEO -20 V open base 2
emitter-base voltage VEBO -5 V open collector 2
collector current IC -2 A 2
peak collector current ICM -3 A single pulse; tp ≤ 1 ms 2
base current IB -300 mA 2
total power dissipation Ptot 300 mW Tamb ≤ 25 °C; FR4 PCB, standard footprint 2
total power dissipation Ptot 480 mW Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 1 cm2 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance junction to ambient Rth(j-a) 417 K/W in free air; FR4 PCB, standard footprint 2
thermal resistance junction to ambient Rth(j-a) 260 K/W FR4 PCB, mounting pad for collector 1 cm2 2
collector-base cut-off current ICBO -100 nA VCB = -20 V; IE = 0 A; Tamb = 25 °C 3
collector-base cut-off current ICBO -50 µA VCB = -20 V; IE = 0 A; Tj = 150 °C 3
emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 225 VCE = -2 V; IC = -100 mA; Tamb = 25 °C 3
DC current gain hFE 200 VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
DC current gain hFE 150 VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat -80 mV IC = -500 mA; IB = -50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed 3
collector-emitter saturation voltage VCEsat -150 mV IC = -1 A; IB = -50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed 3
collector-emitter saturation voltage VCEsat -250 mV IC = -2 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat -225 mV 3
collector-emitter saturation resistance RCEsat 113 mΩ IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter saturation voltage VBEsat -1.1 V IC = -2 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter turn-on voltage VBEon -1.2 V VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
transition frequency fT 100 MHz VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C 3
collector capacitance Cc 50 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: PBSS5220T-QR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: pbss5220t-qr-etched.step / pbss5220t-qr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss5220t-qr.step / pbss5220t-qr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (10 pp, sha256 4b0f8e5a0358cbcc, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF