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PBSS5140U

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PBSS5140U

Nexperia · Bipolar (BJT) · SOT-323

PBSS5140U from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 base input Base terminal of the PNP transistor; the datasheet limits it to a peak base current IBM of −1 A.
2 emitter passive Emitter terminal of the PNP transistor; emitter-base voltage VEBO is limited to −5 V (open collector).
3 collector passive Collector terminal of the PNP transistor; DC collector current IC is limited to −1 A and peak ICM to −2 A, with VCEO of −40 V (open base).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO -40 V open emitter 4
collector-emitter voltage VCEO -40 V open base 4
emitter-base voltage VEBO -5 V open collector 4
collector current (DC) IC -1 A 4
peak collector current ICM -2 A 4
peak base current IBM -1 A 4
total power dissipation Ptot 250 mW Tamb ≤ 25 °C; note 1 4
total power dissipation Ptot 350 mW Tamb ≤ 25 °C; note 2 4
storage temperature Tstg -65 150 °C 4
junction temperature Tj 150 °C 4
operating ambient temperature Tamb -65 150 °C 4
collector-base cut-off current ICBO -100 nA VCB = −40 V; IC = 0 5
collector-base cut-off current ICBO -50 μA VCB = −40 V; IC = 0; Tamb = 150 °C 5
collector-emitter cut-off current ICEO -100 nA VCE = −30 V; IB = 0 5
emitter-base cut-off current IEBO -100 nA VEB = −5 V; IC = 0 5
DC current gain hFE 300 VCE = −5 V; IC = −1 mA 5
DC current gain hFE 300 800 VCE = −5 V; IC = −100 mA 5
DC current gain hFE 250 VCE = −5 V; IC = −500 mA 5
DC current gain hFE 160 VCE = −5 V; IC = −1 A 5
saturation voltage VCEsat -200 mV IC = −100 mA; IB = −1 mA 5
saturation voltage VCEsat -250 mV IC = −500 mA; IB = −50 mA 5
saturation voltage VCEsat -500 mV IC = −1 A; IB = −100 mA 5
equivalent on-resistance RCEsat 300 500 mΩ IC = −500 mA; IB = −50 mA; note 1 5
base-emitter saturation voltage VBEsat -1.1 V IC = −1 A; IB = −50 mA 5
base-emitter turn-on voltage VBEon -1 V VCE = −5 V; IC = −1 A 5
transition frequency fT 150 MHz IC = −50 mA; VCE = −10 V; f = 100 MHz 5
collector capacitance Cc 12 pF VCB = −10 V; IE = Ie = 0; f = 1 MHz 5
thermal resistance from junction to ambient Rth j-a 500 K/W in free air; note 1 4
thermal resistance from junction to ambient Rth j-a 357 K/W in free air; note 2 4

CAD (KiCad official)

  • Symbol: PBSS5140U
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: pbss5140u-etched.step / pbss5140u-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss5140u.step / pbss5140u.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (10 pp, sha256 17ed0143ace53647, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF