component
PBSS5130T
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PBSS5130T
Nexperia · Bipolar (BJT) · SOT-23
PBSS5130T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet limits the peak base current to -300 mA for single pulses with tp ≤ 1 ms (IBM). |
| 2 | E | passive | Emitter of the PNP transistor; the device emitter-base voltage is limited to -5 V (VEBO, open collector). |
| 3 | C | passive | Collector of the PNP transistor; the device is rated for a collector-emitter voltage of -30 V (VCEO, open base), a collector current of -1 A (IC) and a peak collector current of -3 A (ICM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -30 | V | open emitter | 3 | ||
| Collector-emitter voltage | VCEO | -30 | V | open base | 3 | ||
| Emitter-base voltage | VEBO | -5 | V | open collector | 3 | ||
| Collector current | IC | -1 | A | 3 | |||
| Peak collector current | ICM | -3 | A | 3 | |||
| Peak base current | IBM | -300 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| Total power dissipation | Ptot | 300 | mW | Tamb ≤ 25 °C; footnote [1] FR4 PCB, single-sided copper, standard footprint | 3 | ||
| Total power dissipation | Ptot | 480 | mW | Tamb ≤ 25 °C; footnote [2] FR4 PCB, single-sided copper, mounting pad for collector 1 cm² | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 417 | K/W | in free air; footnote [1] FR4 PCB, single-sided copper, standard footprint | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 260 | K/W | in free air; footnote [2] FR4 PCB, mounting pad for collector 1 cm² | 3 | ||
| Collector-base cut-off current | ICBO | -100 | nA | VCB = -30 V; IE = 0 A; Tamb = 25 °C | 4 | ||
| Collector-base cut-off current | ICBO | -50 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 4 | ||
| Emitter-base cut-off current | IEBO | -100 | nA | VEB = -4 V; IC = 0 A; Tamb = 25 °C | 4 | ||
| DC current gain | hFE | 300 | 450 | VCE = -2 V; IC = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 | ||
| DC current gain | hFE | 260 | 350 | VCE = -2 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 | ||
| DC current gain | hFE | 210 | 290 | VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 | ||
| Collector-emitter saturation voltage | VCEsat | -100 | mV | IC = -100 mA; IB = -1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 | ||
| Collector-emitter saturation voltage | VCEsat | -225 | mV | IC = -1 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 | ||
| Collector-emitter saturation resistance | RCEsat | 220 | mΩ | IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 | ||
| Base-emitter saturation voltage | VBEsat | -1.1 | V | IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 | ||
| Base-emitter turn-on voltage | VBEon | -0.75 | V | VCE = -2 V; IC = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 | ||
| Transition frequency | fT | 100 | 200 | MHz | VCE = -10 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C | 4 | |
| Collector capacitance | Cc | 28 | pF | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 4 |
CAD (KiCad official)
- Symbol:
PBSS5130T - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pbss5130t-etched.step/pbss5130t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss5130t.step/pbss5130t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (10 pp, sha256
a57ff4161ef01198, retrieved 2026-10-19, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PBSS5130T
**Nexperia** · Bipolar (BJT) · SOT-23
PBSS5130T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet limits the peak base current to -300 mA for single pulses with tp ≤ 1 ms (IBM). |
| 2 | E | passive | Emitter of the PNP transistor; the device emitter-base voltage is limited to -5 V (VEBO, open collector). |
| 3 | C | passive | Collector of the PNP transistor; the device is rated for a collector-emitter voltage of -30 V (VCEO, open base), a collector current of -1 A (IC) and a peak collector current of -3 A (ICM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | -30 | V | open emitter | 3 |
| Collector-emitter voltage | VCEO | | | -30 | V | open base | 3 |
| Emitter-base voltage | VEBO | | | -5 | V | open collector | 3 |
| Collector current | IC | | | -1 | A | | 3 |
| Peak collector current | ICM | | | -3 | A | | 3 |
| Peak base current | IBM | | | -300 | mA | single pulse; tp ≤ 1 ms | 3 |
| Total power dissipation | Ptot | | | 300 | mW | Tamb ≤ 25 °C; footnote [1] FR4 PCB, single-sided copper, standard footprint | 3 |
| Total power dissipation | Ptot | | | 480 | mW | Tamb ≤ 25 °C; footnote [2] FR4 PCB, single-sided copper, mounting pad for collector 1 cm² | 3 |
| Junction temperature | Tj | | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Thermal resistance from junction to ambient | Rth(j-a) | | | 417 | K/W | in free air; footnote [1] FR4 PCB, single-sided copper, standard footprint | 3 |
| Thermal resistance from junction to ambient | Rth(j-a) | | | 260 | K/W | in free air; footnote [2] FR4 PCB, mounting pad for collector 1 cm² | 3 |
| Collector-base cut-off current | ICBO | | | -100 | nA | VCB = -30 V; IE = 0 A; Tamb = 25 °C | 4 |
| Collector-base cut-off current | ICBO | | | -50 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 4 |
| Emitter-base cut-off current | IEBO | | | -100 | nA | VEB = -4 V; IC = 0 A; Tamb = 25 °C | 4 |
| DC current gain | hFE | 300 | 450 | | | VCE = -2 V; IC = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 |
| DC current gain | hFE | 260 | 350 | | | VCE = -2 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 |
| DC current gain | hFE | 210 | 290 | | | VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 |
| Collector-emitter saturation voltage | VCEsat | | | -100 | mV | IC = -100 mA; IB = -1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 |
| Collector-emitter saturation voltage | VCEsat | | | -225 | mV | IC = -1 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 |
| Collector-emitter saturation resistance | RCEsat | | | 220 | mΩ | IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 |
| Base-emitter saturation voltage | VBEsat | | | -1.1 | V | IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 |
| Base-emitter turn-on voltage | VBEon | | | -0.75 | V | VCE = -2 V; IC = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 4 |
| Transition frequency | fT | 100 | 200 | | MHz | VCE = -10 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C | 4 |
| Collector capacitance | Cc | | | 28 | pF | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 4 |
## CAD (KiCad official)
- Symbol: `PBSS5130T`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pbss5130t-etched.step` / `pbss5130t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pbss5130t.step` / `pbss5130t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PBSS5130T.pdf) (10 pp, sha256 `a57ff4161ef01198`, retrieved 2026-10-19, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pbss5130t-datasheet.pdf)