component

PBSS4540X

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PBSS4540X

Nexperia · Bipolar (BJT) · SOT-89

PBSS4540X from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the NPN low VCEsat transistor; the emitter-base voltage VEBO is limited to 6 V with the collector open (Table 5).
2 C passive Collector of the NPN transistor; collector current IC is limited to 4 A and the collector-emitter voltage VCEO to 40 V with the base open (Table 5).
3 B passive Base of the NPN transistor; base current IB is limited to 1 A, with a peak base current IBM of 2 A for single pulses of 1 ms or less (Table 5).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 40 V open emitter 3
collector-emitter voltage VCEO 40 V open base 3
emitter-base voltage VEBO 6 V open collector 3
collector current IC 4 A 3
repetitive peak collector current ICRM 5 A δ ≤ 0.02; tp ≤ 10 ms [1] 3
peak collector current ICM 10 A single pulse; tp ≤ 10 ms 3
base current IB 1 A 3
peak base current IBM 2 A single pulse; tp ≤ 1 ms 3
total power dissipation Ptot 2.5 W Tamb ≤ 25 °C; [1][2] 3
total power dissipation Ptot 0.55 W Tamb ≤ 25 °C; [1] 3
total power dissipation Ptot 1 W Tamb ≤ 25 °C; [3] 3
total power dissipation Ptot 1.4 W Tamb ≤ 25 °C; [4] 3
total power dissipation Ptot 1.6 W Tamb ≤ 25 °C; [5] 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -65 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 50 K/W in free air; FR4 PCB standard footprint; pulsed tp ≤ 10 ms; δ ≤ 0.2 [1][2] 4
thermal resistance from junction to ambient Rth(j-a) 225 K/W in free air; FR4 PCB standard footprint [1] 4
thermal resistance from junction to ambient Rth(j-a) 125 K/W in free air; FR4 PCB, mounting pad for collector 1 cm2 [3] 4
thermal resistance from junction to ambient Rth(j-a) 90 K/W in free air; FR4 PCB, mounting pad for collector 6 cm2 [4] 4
thermal resistance from junction to ambient Rth(j-a) 80 K/W in free air; ceramic PCB 7 cm2, 1 cm2 copper [5] 4
thermal resistance from junction to solder point Rth(j-sp) 16 K/W 4
collector-base cut-off current ICBO 100 nA VCB = 30 V; IE = 0 A; Tamb = 25 °C 6
collector-base cut-off current ICBO 50 µA VCB = 30 V; IE = 0 A; Tj = 150 °C 6
collector-emitter cut-off current ICES 100 nA VCE = 30 V; VBE = 0 V; Tamb = 25 °C 6
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 6
DC current gain hFE 300 VCE = 2 V; IC = 0.5 A; Tamb = 25 °C 6
DC current gain hFE 250 VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
DC current gain hFE 100 VCE = 2 V; IC = 5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 90 mV IC = 0.5 A; IB = 5 mA; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 120 mV IC = 1 A; IB = 10 mA; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 150 mV IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 290 mV IC = 4 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 355 mV 6
collector-emitter saturation resistance RCEsat 40 71 mΩ IC = 5 A; IB = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
base-emitter saturation voltage VBEsat 1.1 V 6
base-emitter saturation voltage VBEsat 1.2 V IC = 5 A; IB = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
base-emitter turn-on voltage VBEon 1.1 V VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
transition frequency fT 70 MHz VCE = 10 V; IC = 0.1 A; f = 100 MHz; Tamb = 25 °C 6
collector capacitance Cc 75 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 6

CAD (KiCad official)

  • Symbol: PBSS4540X
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: pbss4540x-etched.step / pbss4540x-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss4540x.step / pbss4540x.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 e90038df4e297f66, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF