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PBSS4350T-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PBSS4350T-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

PBSS4350T-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; the datasheet rates emitter-base voltage at 5 V maximum (VEBO).
2 E passive Emitter of the NPN transistor; the datasheet rates continuous collector current at 2 A maximum.
3 C passive Collector of the NPN transistor; the datasheet rates collector-emitter voltage at 50 V and collector-base voltage at 50 V maximum.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 50 V IC=100μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 50 V IC=10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100μA, IC=0 2
Collector cut-off current ICBO 100 nA VCB=40V, IE=0 2
Emitter cut-off current IEBO 100 nA VEB=4V, IC=0 2
DC current gain hFE(1) hFE(1) 200 VCE=2V, IC=10mA 2
DC current gain hFE(2) hFE(2) 300 VCE=2V, IC=0.2A 2
DC current gain hFE(3) hFE(3) 200 VCE=2V, IC=1A 2
DC current gain hFE(4) hFE(4) 100 VCE=2V, IC=2A 2
DC current gain hFE(5) hFE(5) 40 VCE=2V, IC=6A 2
Collector-emitter saturation voltage VCE(sat)1 VCE(sat)1 20 mV IC=0.1A, IB=10mA 2
Collector-emitter saturation voltage VCE(sat)2 VCE(sat)2 200 mV IC=1A, IB=10mA 2
Collector-emitter saturation voltage VCE(sat)3 VCE(sat)3 220 mV IC=2A, IB=100mA 2
Base-emitter saturation voltage VBE(sat) 1 V IC=2A, IB=50mA 2
Base-emitter on voltage VBE(on) 1 V IC=2A, VCE=2V 2
Output capacitance Cob 20 pF VCB=10V, f=1MHz 2
Turn-on time t(on) 170 ns 2
Turn-off time t(off) 750 ns VCC=10V, IC=1A, IB1=-IB2=10mA 2
Transition frequency fT 100 MHz VCE=10V, IC=50mA, f=100MHz 2
Collector-emitter voltage (absolute maximum) VCEO 50 V 1
Collector-base voltage (absolute maximum) VCBO 50 V 1
Emitter-base voltage (absolute maximum) VEBO 5 V 1
Collector current, continuous (absolute maximum) IC 2 A 1
Power dissipation PC 0.35 W 1
Maximum power dissipation PCM 0.625 W note 1 (ceramic substrate 15x15x0.6mm) 1
Operation junction and storage temperature range TJ,Tstg -55 150 °C 1
Thermal resistance, junction to ambient RθJA 357 °C/W 1
Thermal resistance, junction to ambient (note 1) RθJA 200 °C/W note 1 (ceramic substrate 15x15x0.6mm) 1

CAD (KiCad official)

  • Symbol: PBSS4350T-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pbss4350t-hxy-etched.step / pbss4350t-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss4350t-hxy.step / pbss4350t-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 15bfe58d64329fca, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF