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PBSS4230T

Nexperia · Bipolar (BJT) · SOT-23

PBSS4230T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN transistor; peak base current is limited to 300 mA for single pulses with tp ≤ 1 ms.
2 E passive Emitter terminal of the NPN transistor; emitter-base voltage is limited to 5 V (VEBO, open collector).
3 C passive Collector terminal of the NPN transistor; collector current is limited to 2 A continuous (ICM 3 A peak) with collector-base voltage up to 40 V (VCBO).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 40 V open emitter 2
collector-emitter voltage VCEO 30 V open base 2
emitter-base voltage VEBO 5 V open collector 2
collector current IC 2 A 2
peak collector current ICM 3 A 2
peak base current IBM 300 mA single pulse; tp ≤ 1 ms 2
total power dissipation Ptot 300 mW Tamb ≤ 25 °C [1] 2
total power dissipation Ptot 480 mW Tamb ≤ 25 °C [2] 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 417 K/W in free air [1] 3
thermal resistance from junction to ambient Rth(j-a) 260 K/W mounting pad for collector 1 cm² [2] 3
collector-base cut-off current ICBO 100 nA VCB = 30 V; IE = 0 A; Tamb = 25 °C 3
collector-base cut-off current ICBO 50 µA VCB = 30 V; IE = 0 A; Tj = 150 °C 3
emitter-base cut-off current IEBO 100 nA VEB = 4 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 350 470 - VCE = 2 V; IC = 100 mA; Tamb = 25 °C 3
DC current gain hFE 300 450 - VCE = 2 V; IC = 500 mA; Tamb = 25 °C 3
DC current gain hFE 300 420 - VCE = 2 V; IC = 1 A; Tamb = 25 °C 3
DC current gain hFE 150 250 - VCE = 2 V; IC = 2 A; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 45 70 mV IC = 100 mA; IB = 1 mA; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 70 100 mV IC = 500 mA; IB = 50 mA; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 120 180 mV IC = 750 mA; IB = 15 mA; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 130 180 mV IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 240 320 mV IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
collector-emitter saturation resistance RCEsat 140 200 mΩ IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter saturation voltage VBEsat 1.1 V IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter turn-on voltage VBEon 0.75 V VCE = 2 V; IC = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
transition frequency fT 100 230 MHz VCE = 10 V; IC = 100 mA; f = 100 MHz; Tamb = 25 °C 3
collector capacitance Cc 15 20 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: PBSS4230T
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pbss4230t-etched.step / pbss4230t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss4230t.step / pbss4230t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 bbe7072d6c68e669, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF