component
PBSS4160XX
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Nexperia Bipolar (BJT), SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PBSS4160XX
Nexperia · Bipolar (BJT) · SOT-89-3
PBSS4160XX from Nexperia, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the NPN transistor; the datasheet gives no pin-specific rating, so the device limits in Table 5 apply. |
| 2 | C | passive | Collector of the NPN transistor; the device limits are VCEO 60 V and IC 1 A, with ICM 2 A peak for tp ≤ 1 ms (Table 5). |
| 3 | B | passive | Base of the NPN transistor; the device limits are IB 300 mA and IBM 1 A peak for tp ≤ 1 ms (Table 5). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 60 | V | open emitter | 3 | ||
| Collector-emitter voltage | VCEO | 60 | V | open base | 3 | ||
| Emitter-base voltage | VEBO | 7 | V | open collector | 3 | ||
| Collector current | IC | 1 | A | 3 | |||
| Peak collector current | ICM | 2 | A | single pulse; tp ≤ 1 ms | 3 | ||
| Base current | IB | 300 | mA | 3 | |||
| Peak base current | IBM | 1 | A | single pulse; tp ≤ 1 ms | 3 | ||
| Total power dissipation | Ptot | 500 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 3 | ||
| Total power dissipation | Ptot | 950 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 [2] | 3 | ||
| Total power dissipation | Ptot | 1.35 | W | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 [3] | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 250 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 4 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 132 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 [2] | 4 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 93 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 [3] | 4 | ||
| Collector-base cut-off current | ICBO | 100 | nA | VCB = 48 V; IE = 0 A; Tamb = 25 °C | 6 | ||
| Collector-base cut-off current | ICBO | 10 | µA | VCB = 48 V; IE = 0 A; Tj = 150 °C | 6 | ||
| Collector-emitter cut-off current | ICES | 100 | nA | VCE = 48 V; VBE = 0 V; Tamb = 25 °C | 6 | ||
| Emitter-base cut-off current | IEBO | 100 | nA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 6 | ||
| DC current gain | hFE | 170 | 360 | VCE = 10 V; IC = 500 mA; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 [1] | 6 | ||
| DC current gain | hFE | 50 | VCE = 5 V; IC = 1 A; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 [1] | 6 | |||
| Collector-emitter saturation voltage | VCEsat | 200 | mV | pulse test tp ≤ 300 µs; δ ≤ 0.02 [1] | 6 | ||
| Collector-emitter saturation resistance | RCEsat | 0.4 | Ω | 6 | |||
| Base-emitter saturation voltage | VBEsat | 1.2 | V | IC = 500 mA; IB = 50 mA; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 [1] | 6 | ||
| Base-emitter voltage | VBE | 1 | V | VCE = 5 V; IC = 1 A; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 [1] | 6 |
CAD (KiCad official)
- Symbol:
PBSS4160XX - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3 (KiCad packages3D, STEP)
- 3D model files:
pbss4160xx-etched.step/pbss4160xx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss4160xx.step/pbss4160xx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (12 pp, sha256
0970eab1be33608a, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PBSS4160XX
**Nexperia** · Bipolar (BJT) · SOT-89-3
PBSS4160XX from Nexperia, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the NPN transistor; the datasheet gives no pin-specific rating, so the device limits in Table 5 apply. |
| 2 | C | passive | Collector of the NPN transistor; the device limits are VCEO 60 V and IC 1 A, with ICM 2 A peak for tp ≤ 1 ms (Table 5). |
| 3 | B | passive | Base of the NPN transistor; the device limits are IB 300 mA and IBM 1 A peak for tp ≤ 1 ms (Table 5). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | 60 | V | open emitter | 3 |
| Collector-emitter voltage | VCEO | | | 60 | V | open base | 3 |
| Emitter-base voltage | VEBO | | | 7 | V | open collector | 3 |
| Collector current | IC | | | 1 | A | | 3 |
| Peak collector current | ICM | | | 2 | A | single pulse; tp ≤ 1 ms | 3 |
| Base current | IB | | | 300 | mA | | 3 |
| Peak base current | IBM | | | 1 | A | single pulse; tp ≤ 1 ms | 3 |
| Total power dissipation | Ptot | | | 500 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 3 |
| Total power dissipation | Ptot | | | 950 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 [2] | 3 |
| Total power dissipation | Ptot | | | 1.35 | W | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 [3] | 3 |
| Junction temperature | Tj | | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Thermal resistance from junction to ambient | Rth(j-a) | | | 250 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 4 |
| Thermal resistance from junction to ambient | Rth(j-a) | | | 132 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 [2] | 4 |
| Thermal resistance from junction to ambient | Rth(j-a) | | | 93 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 [3] | 4 |
| Collector-base cut-off current | ICBO | | | 100 | nA | VCB = 48 V; IE = 0 A; Tamb = 25 °C | 6 |
| Collector-base cut-off current | ICBO | | | 10 | µA | VCB = 48 V; IE = 0 A; Tj = 150 °C | 6 |
| Collector-emitter cut-off current | ICES | | | 100 | nA | VCE = 48 V; VBE = 0 V; Tamb = 25 °C | 6 |
| Emitter-base cut-off current | IEBO | | | 100 | nA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 6 |
| DC current gain | hFE | 170 | | 360 | | VCE = 10 V; IC = 500 mA; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 [1] | 6 |
| DC current gain | hFE | 50 | | | | VCE = 5 V; IC = 1 A; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 [1] | 6 |
| Collector-emitter saturation voltage | VCEsat | | | 200 | mV | pulse test tp ≤ 300 µs; δ ≤ 0.02 [1] | 6 |
| Collector-emitter saturation resistance | RCEsat | | | 0.4 | Ω | | 6 |
| Base-emitter saturation voltage | VBEsat | | | 1.2 | V | IC = 500 mA; IB = 50 mA; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 [1] | 6 |
| Base-emitter voltage | VBE | | | 1 | V | VCE = 5 V; IC = 1 A; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 [1] | 6 |
## CAD (KiCad official)
- Symbol: `PBSS4160XX`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89-3 (KiCad packages3D, STEP)
- 3D model files: `pbss4160xx-etched.step` / `pbss4160xx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pbss4160xx.step` / `pbss4160xx.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912996743852033) (12 pp, sha256 `0970eab1be33608a`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pbss4160xx-datasheet.pdf)