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Contents

README

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PBSS4160XF

Nexperia · Bipolar (BJT) · SOT-89

PBSS4160XF from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter terminal of the NPN BISS transistor; the datasheet limits VEBO to 7 V max (open collector) and IE is bounded by the 1 A IC rating.
2 C passive Collector terminal; IC is rated 1 A max and ICM 2 A peak (single pulse, tp ≤ 1 ms), with VCEO 60 V max (open base).
3 B passive Base terminal; IB is rated 300 mA max and IBM 1 A peak (single pulse, tp ≤ 1 ms).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 60 V open emitter 3
collector-emitter voltage VCEO 60 V open base 3
emitter-base voltage VEBO 7 V open collector 3
collector current IC 1 A 3
peak collector current ICM 2 A single pulse; tp ≤ 1 ms 3
base current IB 300 mA 3
peak base current IBM 1 A single pulse; tp ≤ 1 ms 3
total power dissipation Ptot 500 mW Tamb ≤ 25 °C; FR4 PCB, standard footprint [1] 3
total power dissipation Ptot 950 mW Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 1 cm2 [2] 3
total power dissipation Ptot 1.35 W Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 6 cm2 [3] 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 250 K/W in free air; FR4 PCB, standard footprint [1] 4
thermal resistance from junction to ambient Rth(j-a) 132 K/W in free air; FR4 PCB, mounting pad for collector 1 cm2 [2] 4
thermal resistance from junction to ambient Rth(j-a) 93 K/W in free air; FR4 PCB, mounting pad for collector 6 cm2 [3] 4
collector-base cut-off current ICBO 100 nA VCB = 48 V; IE = 0 A; Tamb = 25 °C 6
collector-base cut-off current ICBO 10 µA VCB = 48 V; IE = 0 A; Tj = 150 °C 6
collector-emitter cut-off current ICES 100 nA VCE = 48 V; VBE = 0 V; Tamb = 25 °C 6
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 6
DC current gain hFE 170 360 VCE = 10 V; IC = 500 mA; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 6
DC current gain hFE 50 VCE = 5 V; IC = 1 A; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 6
collector-emitter saturation voltage VCEsat 200 mV pulse test tp ≤ 300 µs; δ ≤ 0.02 6
collector-emitter saturation resistance RCEsat 0.4 Ω 6
base-emitter saturation voltage VBEsat 1.2 V IC = 500 mA; IB = 50 mA; Tamb = 25 °C 6
base-emitter voltage VBE 1 V VCE = 5 V; IC = 1 A; Tamb = 25 °C; pulse test tp ≤ 300 µs; δ ≤ 0.02 6

CAD (KiCad official)

  • Symbol: PBSS4160XF
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: pbss4160xf-etched.step / pbss4160xf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss4160xf.step / pbss4160xf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 0970eab1be33608a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF