component
PBSS4140U
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Nexperia Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PBSS4140U
Nexperia · Bipolar (BJT) · SOT-323
PBSS4140U from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the NPN transistor; peak base current IBM is 1 A (single pulse, tp ≤ 1 ms) per the limiting values. |
| 2 | E | passive | Emitter terminal of the NPN transistor; the device is rated for VEBO 5 V and emitter-base cut-off current IEBO of 100 nA max at VEB = 5 V. |
| 3 | C | passive | Collector terminal of the NPN transistor; rated for VCEO 40 V, IC 1 A continuous and ICM 2 A peak, with Ptot 250 mW (Tamb ≤ 25 °C, standard footprint) or 350 mW (1 cm² collector pad). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | 40 | V | open emitter | 2 | ||
| collector-emitter voltage | VCEO | 40 | V | open base | 2 | ||
| emitter-base voltage | VEBO | 5 | V | open collector | 2 | ||
| collector current | IC | 1 | A | 2 | |||
| peak collector current | ICM | 2 | A | 2 | |||
| peak base current | IBM | 1 | A | single pulse; tp ≤ 1 ms | 2 | ||
| total power dissipation | Ptot | 250 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint | 2 | ||
| total power dissipation | Ptot | 350 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 | 2 | ||
| junction temperature | Tj | 150 | °C | 2 | |||
| ambient temperature | Tamb | -65 | 150 | °C | 2 | ||
| storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 500 | K/W | in free air; FR4 PCB, standard footprint | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 357 | K/W | in free air; FR4 PCB, mounting pad for collector 1 cm2 | 3 | ||
| collector-base cut-off current | ICBO | 100 | nA | VCB = 40 V; IE = 0 A; Tamb = 25 °C | 3 | ||
| collector-base cut-off current | ICBO | 50 | µA | VCB = 40 V; IE = 0 A; Tj = 150 °C | 3 | ||
| collector-emitter cut-off current (base open) | ICEO | 100 | nA | IB = 0 A; VCE = 30 V; Tamb = 25 °C | 3 | ||
| emitter-base cut-off current | IEBO | 100 | nA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 300 | VCE = 5 V; IC = 1 mA; Tamb = 25 °C | 3 | |||
| DC current gain | hFE | 300 | 900 | VCE = 5 V; IC = 500 mA; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 200 | VCE = 5 V; IC = 1 A; Tamb = 25 °C | 3 | |||
| collector-emitter saturation voltage | VCEsat | 200 | mV | IC = 100 mA; IB = 1 mA; Tamb = 25 °C | 3 | ||
| collector-emitter saturation voltage | VCEsat | 250 | mV | IC = 500 mA; IB = 50 mA; Tamb = 25 °C | 3 | ||
| collector-emitter saturation voltage | VCEsat | 500 | mV | IC = 1 A; IB = 100 mA; Tamb = 25 °C | 3 | ||
| collector-emitter saturation resistance | RCEsat | 260 | 500 | mΩ | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 3 | |
| base-emitter saturation voltage | VBEsat | 1.2 | V | IC = 1 A; IB = 100 mA; Tamb = 25 °C | 3 | ||
| base-emitter turn-on voltage | VBEon | 1.1 | V | VCE = 5 V; IC = 1 A; Tamb = 25 °C | 3 | ||
| transition frequency | fT | 150 | MHz | VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 °C | 3 | ||
| collector capacitance | Cc | 10 | pF | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
PBSS4140U - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
pbss4140u-etched.step/pbss4140u-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss4140u.step/pbss4140u.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (9 pp, sha256
26872218d84da3bd, retrieved 2026-10-19, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PBSS4140U
**Nexperia** · Bipolar (BJT) · SOT-323
PBSS4140U from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the NPN transistor; peak base current IBM is 1 A (single pulse, tp ≤ 1 ms) per the limiting values. |
| 2 | E | passive | Emitter terminal of the NPN transistor; the device is rated for VEBO 5 V and emitter-base cut-off current IEBO of 100 nA max at VEB = 5 V. |
| 3 | C | passive | Collector terminal of the NPN transistor; rated for VCEO 40 V, IC 1 A continuous and ICM 2 A peak, with Ptot 250 mW (Tamb ≤ 25 °C, standard footprint) or 350 mW (1 cm² collector pad). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | | | 40 | V | open emitter | 2 |
| collector-emitter voltage | VCEO | | | 40 | V | open base | 2 |
| emitter-base voltage | VEBO | | | 5 | V | open collector | 2 |
| collector current | IC | | | 1 | A | | 2 |
| peak collector current | ICM | | | 2 | A | | 2 |
| peak base current | IBM | | | 1 | A | single pulse; tp ≤ 1 ms | 2 |
| total power dissipation | Ptot | | | 250 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint | 2 |
| total power dissipation | Ptot | | | 350 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 | 2 |
| junction temperature | Tj | | | 150 | °C | | 2 |
| ambient temperature | Tamb | -65 | | 150 | °C | | 2 |
| storage temperature | Tstg | -65 | | 150 | °C | | 2 |
| thermal resistance from junction to ambient | Rth(j-a) | | | 500 | K/W | in free air; FR4 PCB, standard footprint | 3 |
| thermal resistance from junction to ambient | Rth(j-a) | | | 357 | K/W | in free air; FR4 PCB, mounting pad for collector 1 cm2 | 3 |
| collector-base cut-off current | ICBO | | | 100 | nA | VCB = 40 V; IE = 0 A; Tamb = 25 °C | 3 |
| collector-base cut-off current | ICBO | | | 50 | µA | VCB = 40 V; IE = 0 A; Tj = 150 °C | 3 |
| collector-emitter cut-off current (base open) | ICEO | | | 100 | nA | IB = 0 A; VCE = 30 V; Tamb = 25 °C | 3 |
| emitter-base cut-off current | IEBO | | | 100 | nA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 3 |
| DC current gain | hFE | 300 | | | | VCE = 5 V; IC = 1 mA; Tamb = 25 °C | 3 |
| DC current gain | hFE | 300 | | 900 | | VCE = 5 V; IC = 500 mA; Tamb = 25 °C | 3 |
| DC current gain | hFE | 200 | | | | VCE = 5 V; IC = 1 A; Tamb = 25 °C | 3 |
| collector-emitter saturation voltage | VCEsat | | | 200 | mV | IC = 100 mA; IB = 1 mA; Tamb = 25 °C | 3 |
| collector-emitter saturation voltage | VCEsat | | | 250 | mV | IC = 500 mA; IB = 50 mA; Tamb = 25 °C | 3 |
| collector-emitter saturation voltage | VCEsat | | | 500 | mV | IC = 1 A; IB = 100 mA; Tamb = 25 °C | 3 |
| collector-emitter saturation resistance | RCEsat | | 260 | 500 | mΩ | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 3 |
| base-emitter saturation voltage | VBEsat | | | 1.2 | V | IC = 1 A; IB = 100 mA; Tamb = 25 °C | 3 |
| base-emitter turn-on voltage | VBEon | | | 1.1 | V | VCE = 5 V; IC = 1 A; Tamb = 25 °C | 3 |
| transition frequency | fT | 150 | | | MHz | VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 °C | 3 |
| collector capacitance | Cc | | | 10 | pF | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 3 |
## CAD (KiCad official)
- Symbol: `PBSS4140U`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `pbss4140u-etched.step` / `pbss4140u-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pbss4140u.step` / `pbss4140u.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PBSS4140U.pdf) (9 pp, sha256 `26872218d84da3bd`, retrieved 2026-10-19, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pbss4140u-datasheet.pdf)