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Ray Publish 0.1.0 5e50afd 16d ago

PBSS4140U

Nexperia · Bipolar (BJT) · SOT-323

PBSS4140U from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor; peak base current IBM is 1 A (single pulse, tp ≤ 1 ms) per the limiting values.
2 E passive Emitter terminal of the NPN transistor; the device is rated for VEBO 5 V and emitter-base cut-off current IEBO of 100 nA max at VEB = 5 V.
3 C passive Collector terminal of the NPN transistor; rated for VCEO 40 V, IC 1 A continuous and ICM 2 A peak, with Ptot 250 mW (Tamb ≤ 25 °C, standard footprint) or 350 mW (1 cm² collector pad).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 40 V open emitter 2
collector-emitter voltage VCEO 40 V open base 2
emitter-base voltage VEBO 5 V open collector 2
collector current IC 1 A 2
peak collector current ICM 2 A 2
peak base current IBM 1 A single pulse; tp ≤ 1 ms 2
total power dissipation Ptot 250 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint 2
total power dissipation Ptot 350 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; FR4 PCB, standard footprint 3
thermal resistance from junction to ambient Rth(j-a) 357 K/W in free air; FR4 PCB, mounting pad for collector 1 cm2 3
collector-base cut-off current ICBO 100 nA VCB = 40 V; IE = 0 A; Tamb = 25 °C 3
collector-base cut-off current ICBO 50 µA VCB = 40 V; IE = 0 A; Tj = 150 °C 3
collector-emitter cut-off current (base open) ICEO 100 nA IB = 0 A; VCE = 30 V; Tamb = 25 °C 3
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 300 VCE = 5 V; IC = 1 mA; Tamb = 25 °C 3
DC current gain hFE 300 900 VCE = 5 V; IC = 500 mA; Tamb = 25 °C 3
DC current gain hFE 200 VCE = 5 V; IC = 1 A; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 200 mV IC = 100 mA; IB = 1 mA; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 250 mV IC = 500 mA; IB = 50 mA; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat 500 mV IC = 1 A; IB = 100 mA; Tamb = 25 °C 3
collector-emitter saturation resistance RCEsat 260 500 mΩ IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter saturation voltage VBEsat 1.2 V IC = 1 A; IB = 100 mA; Tamb = 25 °C 3
base-emitter turn-on voltage VBEon 1.1 V VCE = 5 V; IC = 1 A; Tamb = 25 °C 3
transition frequency fT 150 MHz VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 °C 3
collector capacitance Cc 10 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: PBSS4140U
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: pbss4140u-etched.step / pbss4140u-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss4140u.step / pbss4140u.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (9 pp, sha256 26872218d84da3bd, retrieved 2026-10-19, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF