component
PBSS4140T
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PBSS4140T
Nexperia · Bipolar (BJT) · SOT-23
PBSS4140T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor; the limiting values allow a peak base current IBM of 1 A for a single pulse with tp ≤ 1 ms. |
| 2 | E | passive | Emitter terminal of the NPN transistor; the emitter-base voltage VEBO is limited to 5 V. |
| 3 | C | passive | Collector terminal of the NPN transistor; the collector current IC is limited to 1 A and the collector-emitter voltage VCEO to 40 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 40 | V | open emitter | 2 | ||
| Collector-emitter voltage | VCEO | 40 | V | open base | 2 | ||
| Emitter-base voltage | VEBO | 5 | V | open collector | 2 | ||
| Collector current | IC | 1 | A | 2 | |||
| Peak collector current | ICM | 2 | A | 2 | |||
| Peak base current | IBM | 1 | A | single pulse; tp ≤ 1 ms | 2 | ||
| Total power dissipation | Ptot | 300 | mW | Tamb ≤ 25 °C; FR4 PCB, standard footprint [1] | 2 | ||
| Total power dissipation | Ptot | 450 | mW | Tamb ≤ 25 °C; FR4 PCB, 1 cm² collector mounting pad [2] | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Ambient temperature | Tamb | -65 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 417 | K/W | in free air; FR4 PCB, single-sided, 35 μm copper, standard footprint [1] | 2 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 278 | K/W | in free air; FR4 PCB, 35 µm copper, mounting pad for collector 1 cm² [2] | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 3 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC = 2 mA; IB = 0 A; Tamb = 25 °C | 3 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100 µA; IC = 0 A; Tamb = 25 °C | 3 | ||
| Collector-base cut-off current | ICBO | 100 | nA | VCB = 40 V; IE = 0 A; Tamb = 25 °C | 3 | ||
| Collector-base cut-off current | ICBO | 50 | µA | VCB = 40 V; IE = 0 A; Tamb = 150 °C | 3 | ||
| Collector-emitter cut-off current | ICES | 100 | nA | VCE = 30 V; Tamb = 25 °C | 3 | ||
| Collector-emitter cut-off current (base open) | ICEO | 100 | nA | IB = 0 A; VCE = 30 V; Tamb = 25 °C | 3 | ||
| Emitter-base cut-off current | IEBO | 100 | nA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 300 | VCE = 5 V; IC = 1 mA; Tamb = 25 °C | 3 | |||
| DC current gain | hFE | 300 | 900 | VCE = 5 V; IC = 500 mA; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 200 | VCE = 5 V; IC = 1 A; Tamb = 25 °C | 3 | |||
| Collector-emitter saturation voltage | VCEsat | 200 | mV | IC = 100 mA; IB = 1 mA; Tamb = 25 °C | 3 | ||
| Collector-emitter saturation voltage | VCEsat | 250 | mV | IC = 500 mA; IB = 50 mA; Tamb = 25 °C | 3 | ||
| Collector-emitter saturation voltage | VCEsat | 500 | mV | IC = 1 A; IB = 100 mA; Tamb = 25 °C | 3 | ||
| Collector-emitter saturation resistance | RCEsat | 260 | 500 | mΩ | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 3 | |
| Base-emitter saturation voltage | VBEsat | 1.2 | V | IC = 1 A; IB = 100 mA; Tamb = 25 °C | 3 | ||
| Base-emitter turn-on voltage | VBEon | 1.1 | V | VCE = 5 V; IC = 1 A; Tamb = 25 °C | 3 | ||
| Transition frequency | fT | 150 | MHz | VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 °C | 3 | ||
| Collector capacitance | Cc | 10 | pF | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
PBSS4140T - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pbss4140t-etched.step/pbss4140t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss4140t.step/pbss4140t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (9 pp, sha256
50004b2846871107, retrieved 2026-10-18, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PBSS4140T
**Nexperia** · Bipolar (BJT) · SOT-23
PBSS4140T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor; the limiting values allow a peak base current IBM of 1 A for a single pulse with tp ≤ 1 ms. |
| 2 | E | passive | Emitter terminal of the NPN transistor; the emitter-base voltage VEBO is limited to 5 V. |
| 3 | C | passive | Collector terminal of the NPN transistor; the collector current IC is limited to 1 A and the collector-emitter voltage VCEO to 40 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | 40 | V | open emitter | 2 |
| Collector-emitter voltage | VCEO | | | 40 | V | open base | 2 |
| Emitter-base voltage | VEBO | | | 5 | V | open collector | 2 |
| Collector current | IC | | | 1 | A | | 2 |
| Peak collector current | ICM | | | 2 | A | | 2 |
| Peak base current | IBM | | | 1 | A | single pulse; tp ≤ 1 ms | 2 |
| Total power dissipation | Ptot | | | 300 | mW | Tamb ≤ 25 °C; FR4 PCB, standard footprint [1] | 2 |
| Total power dissipation | Ptot | | | 450 | mW | Tamb ≤ 25 °C; FR4 PCB, 1 cm² collector mounting pad [2] | 2 |
| Junction temperature | Tj | | | 150 | °C | | 2 |
| Ambient temperature | Tamb | -65 | | 150 | °C | | 2 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 2 |
| Thermal resistance junction to ambient | Rth(j-a) | | | 417 | K/W | in free air; FR4 PCB, single-sided, 35 μm copper, standard footprint [1] | 2 |
| Thermal resistance junction to ambient | Rth(j-a) | | | 278 | K/W | in free air; FR4 PCB, 35 µm copper, mounting pad for collector 1 cm² [2] | 2 |
| Collector-base breakdown voltage | V(BR)CBO | 40 | | | V | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 3 |
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | | | V | IC = 2 mA; IB = 0 A; Tamb = 25 °C | 3 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | | | V | IE = 100 µA; IC = 0 A; Tamb = 25 °C | 3 |
| Collector-base cut-off current | ICBO | | | 100 | nA | VCB = 40 V; IE = 0 A; Tamb = 25 °C | 3 |
| Collector-base cut-off current | ICBO | | | 50 | µA | VCB = 40 V; IE = 0 A; Tamb = 150 °C | 3 |
| Collector-emitter cut-off current | ICES | | | 100 | nA | VCE = 30 V; Tamb = 25 °C | 3 |
| Collector-emitter cut-off current (base open) | ICEO | | | 100 | nA | IB = 0 A; VCE = 30 V; Tamb = 25 °C | 3 |
| Emitter-base cut-off current | IEBO | | | 100 | nA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 3 |
| DC current gain | hFE | 300 | | | | VCE = 5 V; IC = 1 mA; Tamb = 25 °C | 3 |
| DC current gain | hFE | 300 | | 900 | | VCE = 5 V; IC = 500 mA; Tamb = 25 °C | 3 |
| DC current gain | hFE | 200 | | | | VCE = 5 V; IC = 1 A; Tamb = 25 °C | 3 |
| Collector-emitter saturation voltage | VCEsat | | | 200 | mV | IC = 100 mA; IB = 1 mA; Tamb = 25 °C | 3 |
| Collector-emitter saturation voltage | VCEsat | | | 250 | mV | IC = 500 mA; IB = 50 mA; Tamb = 25 °C | 3 |
| Collector-emitter saturation voltage | VCEsat | | | 500 | mV | IC = 1 A; IB = 100 mA; Tamb = 25 °C | 3 |
| Collector-emitter saturation resistance | RCEsat | | 260 | 500 | mΩ | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 3 |
| Base-emitter saturation voltage | VBEsat | | | 1.2 | V | IC = 1 A; IB = 100 mA; Tamb = 25 °C | 3 |
| Base-emitter turn-on voltage | VBEon | | | 1.1 | V | VCE = 5 V; IC = 1 A; Tamb = 25 °C | 3 |
| Transition frequency | fT | 150 | | | MHz | VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 °C | 3 |
| Collector capacitance | Cc | | | 10 | pF | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 3 |
## CAD (KiCad official)
- Symbol: `PBSS4140T`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pbss4140t-etched.step` / `pbss4140t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pbss4140t.step` / `pbss4140t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PBSS4140T.pdf) (9 pp, sha256 `50004b2846871107`, retrieved 2026-10-18, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pbss4140t-datasheet.pdf)