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PBSS4041NT

Public Made by Adom

by adom

Nexperia Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PBSS4041NT

Nexperia · Bipolar Transistors - BJT · SOT-23

PBSS4041NT from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal; the datasheet limits base current IB to 1 A (Table 5 limiting values).
2 E passive Emitter terminal; the datasheet limits emitter-base voltage VEBO to 5 V (Table 5 limiting values).
3 C passive Collector terminal; the datasheet limits collector-emitter voltage VCEO to 60 V and collector current IC to 3.8 A (Table 5 limiting values).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base breakdown voltage V(BR)CBO 60 V IC = 100 µA; IE = 0 A; Tamb = 25 °C 6
collector-emitter breakdown voltage V(BR)CEO 60 V IC = 10 mA; IB = 0 A; Tamb = 25 °C 6
emitter-base breakdown voltage V(BR)EBO 5 V IE = 100 µA; IC = 0 A; Tamb = 25 °C 6
collector-base cut-off current ICBO 100 nA VCB = 60 V; IE = 0 A; Tamb = 25 °C 6
collector-base cut-off current ICBO 50 µA VCB = 60 V; IE = 0 A; Tj = 150 °C 6
collector-emitter cut-off current ICES 100 nA VCE = 48 V; VBE = 0 V; Tamb = 25 °C 6
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 6
DC current gain hFE 300 500 VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
DC current gain hFE 250 460 VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
DC current gain hFE 120 260 VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
DC current gain hFE 30 100 VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 25 40 mV IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 90 140 mV IC = 1 A; IB = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 50 80 mV IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 110 190 mV IC = 2 A; IB = 40 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 115 200 mV IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 165 300 mV IC = 4 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation resistance RCEsat 38 66 mΩ IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
base-emitter saturation voltage VBEsat 0.89 1.05 V IC = 1 A; IB = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
base-emitter saturation voltage VBEsat 1.04 1.2 V IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
base-emitter saturation voltage VBEsat 1.1 1.3 V IC = 4 A; IB = 400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
base-emitter voltage VBE 0.8 0.9 V VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-base voltage VCBO 60 V open emitter 3
collector-emitter voltage VCEO 60 V open base 3
emitter-base voltage VEBO 5 V open collector 3
collector current IC 3.8 A 3
peak collector current ICM 8 A single pulse; tp ≤ 1 ms 3
base current IB 1 A 3
total power dissipation Ptot 0.39 W Tamb ≤ 25 °C; [1] FR4 PCB single-sided, standard footprint 3
total power dissipation Ptot 0.66 W Tamb ≤ 25 °C; [2] FR4 PCB single-sided, 1 cm2 collector pad 3
total power dissipation Ptot 0.7 W Tamb ≤ 25 °C; [3] FR4 PCB 4-layer, standard footprint 3
total power dissipation Ptot 1 W Tamb ≤ 25 °C; [4] FR4 PCB 4-layer, 1 cm2 collector pad 3
total power dissipation Ptot 1.1 W Tamb ≤ 25 °C; [5] ceramic PCB Al2O3 single-sided, standard footprint 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 320 K/W [1] FR4 PCB single-sided, standard footprint 4
thermal resistance from junction to ambient Rth(j-a) 190 K/W [2] FR4 PCB single-sided, 1 cm2 collector pad 4
thermal resistance from junction to ambient Rth(j-a) 180 K/W [3] FR4 PCB 4-layer, standard footprint 4
thermal resistance from junction to ambient Rth(j-a) 125 K/W [4] FR4 PCB 4-layer, 1 cm2 collector pad 4
thermal resistance from junction to ambient Rth(j-a) 115 K/W [5] ceramic PCB Al2O3 single-sided, standard footprint 4
thermal resistance from junction to solder point Rth(j-sp) 62 K/W 4

CAD (KiCad official)

  • Symbol: PBSS4041NT
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pbss4041nt-etched.step / pbss4041nt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss4041nt.step / pbss4041nt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 08acc3b6337c8bfb, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF