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Contents

README

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PBSS305NX

Nexperia · Bipolar (BJT) · SOT-89

PBSS305NX from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter terminal of the NPN transistor; the datasheet limits emitter-base voltage VEBO to 5 V (open collector).
2 C passive Collector terminal; limits are VCEO 80 V (open base), IC 4.6 A continuous and ICM 9.2 A peak for single pulses with tp ≤ 1 ms.
3 B passive Base terminal used to drive the transistor; the datasheet gives no base voltage limit, only base-current test conditions such as IB = 200 mA for IC = 4 A saturation.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 80 V open emitter 3
collector-emitter voltage VCEO 80 V open base 3
emitter-base voltage VEBO 5 V open collector 3
collector current IC 4.6 A 3
peak collector current ICM 9.2 A single pulse; tp ≤ 1 ms 3
total power dissipation Ptot 0.6 W Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] 3
total power dissipation Ptot 1.65 W Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 [2] 3
total power dissipation Ptot 2.1 W Tamb ≤ 25 °C; ceramic PCB, Al2O3, standard footprint [3] 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -65 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 208 K/W in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] 4
thermal resistance from junction to ambient Rth(j-a) 76 K/W in free air; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 [2] 4
thermal resistance from junction to ambient Rth(j-a) 60 K/W in free air; ceramic PCB, Al2O3, standard footprint [3] 4
thermal resistance from junction to solder point Rth(j-sp) 20 K/W 4
collector-base cut-off current ICBO 100 nA VCB = 80 V; IE = 0 A; Tamb = 25 °C 6
collector-base cut-off current ICBO 50 µA VCB = 80 V; IE = 0 A; Tj = 150 °C 6
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 6
DC current gain hFE hFE 300 470 VCE = 2 V; IC = 0.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
DC current gain hFE hFE 250 420 VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
DC current gain hFE hFE 180 280 VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
DC current gain hFE hFE 90 140 VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
DC current gain hFE hFE 70 110 VCE = 2 V; IC = 5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 25 40 mV IC = 0.5 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 50 70 mV IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 85 120 mV IC = 1 A; IB = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 105 140 mV IC = 2 A; IB = 40 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 150 210 mV IC = 4 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 140 200 mV IC = 4 A; IB = 400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 210 320 mV IC = 4 A; IB = 80 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation voltage VCEsat 170 240 mV IC = 4.6 A; IB = 230 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation resistance RCEsat 38 53 mΩ IC = 4 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector-emitter saturation resistance RCEsat 53 80 mΩ IC = 4 A; IB = 80 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
base-emitter saturation voltage VBEsat 0.82 0.9 V IC = 1 A; IB = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
base-emitter saturation voltage VBEsat 0.94 1.05 V IC = 4 A; IB = 400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
base-emitter turn-on voltage VBEon 0.77 0.85 V VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
collector capacitance Cc 30 50 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 7

CAD (KiCad official)

  • Symbol: PBSS305NX
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: pbss305nx-etched.step / pbss305nx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss305nx.step / pbss305nx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (14 pp, sha256 603d42d2a838c897, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF