component
PBLS4003Y
Public Made by Adomby adom
Nexperia Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
PBLS4003Y
Nexperia · Digital Transistors · SOT-363
PBLS4003Y from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the PNP low VCEsat transistor TR1, rated for collector current IC = -500 mA and emitter-base voltage VEBO = -6 V. |
| 2 | B1 | input | Base of the PNP transistor TR1, with base current IB limited to -50 mA and peak base current IBM limited to -100 mA (single pulse, tp ≤ 1 ms). |
| 3 | O2 | output | Output (collector) of the NPN resistor-equipped transistor TR2, with output current IO limited to 100 mA and peak collector current ICM limited to 100 mA (tp ≤ 1 ms). |
| 4 | GND2 | power_in | GND (emitter) of the NPN resistor-equipped transistor TR2, serving as its ground reference. |
| 5 | I2 | input | Input (base) of the NPN resistor-equipped transistor TR2, with input voltage limited to -10 V (negative) to 40 V (positive) and an internal bias resistor R1 of 10 kΩ typical (7 to 13 kΩ). |
| 6 | C1 | passive | Collector of the PNP low VCEsat transistor TR1, rated for collector-emitter voltage VCEO = -40 V and collector current IC = -500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage (TR1 PNP) | VCBO | -40 | V | open emitter | 3 | ||
| Collector-emitter voltage (TR1 PNP) | VCEO | -40 | V | open base | 3 | ||
| Emitter-base voltage (TR1 PNP) | VEBO | -6 | V | open collector | 3 | ||
| Collector current (TR1 PNP) | IC | -500 | mA | 3 | |||
| Peak collector current (TR1 PNP) | ICM | -1 | A | tp ≤ 1 ms; single pulse | 3 | ||
| Base current (TR1 PNP) | IB | -50 | mA | 3 | |||
| Peak base current (TR1 PNP) | IBM | -100 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| Total power dissipation (TR1 PNP) | Ptot | 200 | mW | Tamb ≤ 25 °C | 3 | ||
| Collector-base voltage (TR2 NPN RET) | VCBO | 50 | V | open emitter | 3 | ||
| Collector-emitter voltage (TR2 NPN RET) | VCEO | 50 | V | open base | 3 | ||
| Emitter-base voltage (TR2 NPN RET) | VEBO | 10 | V | open collector | 3 | ||
| Input voltage positive (TR2 NPN RET) | VI | 40 | V | positive | 3 | ||
| Input voltage negative (TR2 NPN RET) | VI | -10 | V | negative | 3 | ||
| Output current (TR2 NPN RET) | IO | 100 | mA | 3 | |||
| Peak collector current (TR2 NPN RET) | ICM | 100 | mA | tp ≤ 1 ms; single pulse | 3 | ||
| Total power dissipation (TR2 NPN RET) | Ptot | 200 | mW | Tamb ≤ 25 °C | 3 | ||
| Total power dissipation (per device) | Ptot | 300 | mW | per device | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -65 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 416 | K/W | in free air; device mounted on FR4 PCB, single-sided, 35 μm copper, standard footprint | 3 | ||
| Collector-base cut-off current (TR1) | ICBO | -100 | nA | VCB = -40 V; IE = 0 A; Tamb = 25 °C | 4 | ||
| Collector-base cut-off current (TR1) | ICBO | -50 | µA | VCB = -40 V; IE = 0 A; Tj = 150 °C | 4 | ||
| Emitter-base cut-off current (TR1) | IEBO | -100 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 4 | ||
| DC current gain (TR1) | hFE | 200 | VCE = -2 V; IC = -10 mA; Tamb = 25 °C | 4 | |||
| DC current gain (TR1) | hFE | 150 | VCE = -2 V; IC = -100 mA; Tamb = 25 °C [1] | 4 | |||
| DC current gain (TR1) | hFE | 40 | VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1] | 4 | |||
| Collector-emitter saturation voltage (TR1) | VCEsat | -50 | mV | IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C | 4 | ||
| Collector-emitter saturation voltage (TR1) | VCEsat | -130 | mV | IC = -100 mA; IB = -5 mA; Tamb = 25 °C | 4 | ||
| Collector-emitter saturation voltage (TR1) | VCEsat | -200 | mV | IC = -200 mA; IB = -10 mA; Tamb = 25 °C | 4 | ||
| Collector-emitter saturation voltage (TR1) | VCEsat | -350 | mV | 4 | |||
| Collector-emitter saturation resistance (TR1) | RCEsat | 440 | 700 | mΩ | 4 | ||
| Base-emitter saturation voltage (TR1) | VBEsat | -1.2 | V | IC = -500 mA; IB = -50 mA; Tamb = 25 °C [1] | 4 | ||
| Base-emitter turn-on voltage (TR1) | VBEon | -1.1 | V | VCE = -2 V; IC = -100 mA; Tamb = 25 °C [1] | 4 | ||
| Collector capacitance (TR1) | Cc | 10 | pF | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 4 | ||
| Transition frequency (TR1) | fT | 100 | 300 | MHz | VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C | 4 | |
| Collector-base cut-off current (TR2) | ICBO | 100 | nA | VCB = 50 V; IE = 0 A; Tamb = 25 °C | 4 | ||
| Collector-emitter cut-off current (TR2) | ICEO | 1 | µA | VCE = 30 V; IB = 0 A; Tamb = 25 °C | 4 | ||
| Collector-emitter cut-off current (TR2) | ICEO | 50 | µA | VCE = 30 V; IB = 0 A; Tj = 150 °C | 4 | ||
| Emitter-base cut-off current (TR2) | IEBO | 400 | µA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 4 | ||
| DC current gain (TR2) | hFE | 30 | VCE = 5 V; IC = 5 mA; Tamb = 25 °C | 4 | |||
| Collector-emitter saturation voltage (TR2) | VCEsat | 150 | mV | IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C | 4 | ||
| Off-state input voltage (TR2) | VI(off) | 1.1 | 0.8 | V | VCE = 5 V; IC = 100 µA; Tamb = 25 °C | 4 | |
| On-state input voltage (TR2) | VI(on) | 2.5 | 1.8 | V | VCE = 0.3 V; IC = 10 mA; Tamb = 25 °C | 4 | |
| Bias resistor 1 (input) (TR2) | R1 | 7 | 10 | 13 | kΩ | [2] | 4 |
| Bias resistor ratio R2/R1 (TR2) | R2/R1 | 0.8 | 1 | 1.2 | [2] | 4 | |
| Collector capacitance (TR2) | Cc | 2.5 | pF | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 4 |
CAD (KiCad official)
- Symbol:
PBLS4003Y - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
pbls4003y-etched.step/pbls4003y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbls4003y.step/pbls4003y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (11 pp, sha256
8ff66bd6d7bad546, retrieved 2026-10-17, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PBLS4003Y
**Nexperia** · Digital Transistors · SOT-363
PBLS4003Y from Nexperia, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the PNP low VCEsat transistor TR1, rated for collector current IC = -500 mA and emitter-base voltage VEBO = -6 V. |
| 2 | B1 | input | Base of the PNP transistor TR1, with base current IB limited to -50 mA and peak base current IBM limited to -100 mA (single pulse, tp ≤ 1 ms). |
| 3 | O2 | output | Output (collector) of the NPN resistor-equipped transistor TR2, with output current IO limited to 100 mA and peak collector current ICM limited to 100 mA (tp ≤ 1 ms). |
| 4 | GND2 | power_in | GND (emitter) of the NPN resistor-equipped transistor TR2, serving as its ground reference. |
| 5 | I2 | input | Input (base) of the NPN resistor-equipped transistor TR2, with input voltage limited to -10 V (negative) to 40 V (positive) and an internal bias resistor R1 of 10 kΩ typical (7 to 13 kΩ). |
| 6 | C1 | passive | Collector of the PNP low VCEsat transistor TR1, rated for collector-emitter voltage VCEO = -40 V and collector current IC = -500 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage (TR1 PNP) | VCBO | | | -40 | V | open emitter | 3 |
| Collector-emitter voltage (TR1 PNP) | VCEO | | | -40 | V | open base | 3 |
| Emitter-base voltage (TR1 PNP) | VEBO | | | -6 | V | open collector | 3 |
| Collector current (TR1 PNP) | IC | | | -500 | mA | | 3 |
| Peak collector current (TR1 PNP) | ICM | | | -1 | A | tp ≤ 1 ms; single pulse | 3 |
| Base current (TR1 PNP) | IB | | | -50 | mA | | 3 |
| Peak base current (TR1 PNP) | IBM | | | -100 | mA | single pulse; tp ≤ 1 ms | 3 |
| Total power dissipation (TR1 PNP) | Ptot | | | 200 | mW | Tamb ≤ 25 °C | 3 |
| Collector-base voltage (TR2 NPN RET) | VCBO | | | 50 | V | open emitter | 3 |
| Collector-emitter voltage (TR2 NPN RET) | VCEO | | | 50 | V | open base | 3 |
| Emitter-base voltage (TR2 NPN RET) | VEBO | | | 10 | V | open collector | 3 |
| Input voltage positive (TR2 NPN RET) | VI | | | 40 | V | positive | 3 |
| Input voltage negative (TR2 NPN RET) | VI | | | -10 | V | negative | 3 |
| Output current (TR2 NPN RET) | IO | | | 100 | mA | | 3 |
| Peak collector current (TR2 NPN RET) | ICM | | | 100 | mA | tp ≤ 1 ms; single pulse | 3 |
| Total power dissipation (TR2 NPN RET) | Ptot | | | 200 | mW | Tamb ≤ 25 °C | 3 |
| Total power dissipation (per device) | Ptot | | | 300 | mW | per device | 3 |
| Junction temperature | Tj | | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -65 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Thermal resistance junction to ambient | Rth(j-a) | | | 416 | K/W | in free air; device mounted on FR4 PCB, single-sided, 35 μm copper, standard footprint | 3 |
| Collector-base cut-off current (TR1) | ICBO | | | -100 | nA | VCB = -40 V; IE = 0 A; Tamb = 25 °C | 4 |
| Collector-base cut-off current (TR1) | ICBO | | | -50 | µA | VCB = -40 V; IE = 0 A; Tj = 150 °C | 4 |
| Emitter-base cut-off current (TR1) | IEBO | | | -100 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 4 |
| DC current gain (TR1) | hFE | 200 | | | | VCE = -2 V; IC = -10 mA; Tamb = 25 °C | 4 |
| DC current gain (TR1) | hFE | 150 | | | | VCE = -2 V; IC = -100 mA; Tamb = 25 °C [1] | 4 |
| DC current gain (TR1) | hFE | 40 | | | | VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1] | 4 |
| Collector-emitter saturation voltage (TR1) | VCEsat | | | -50 | mV | IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C | 4 |
| Collector-emitter saturation voltage (TR1) | VCEsat | | | -130 | mV | IC = -100 mA; IB = -5 mA; Tamb = 25 °C | 4 |
| Collector-emitter saturation voltage (TR1) | VCEsat | | | -200 | mV | IC = -200 mA; IB = -10 mA; Tamb = 25 °C | 4 |
| Collector-emitter saturation voltage (TR1) | VCEsat | | | -350 | mV | | 4 |
| Collector-emitter saturation resistance (TR1) | RCEsat | | 440 | 700 | mΩ | | 4 |
| Base-emitter saturation voltage (TR1) | VBEsat | | | -1.2 | V | IC = -500 mA; IB = -50 mA; Tamb = 25 °C [1] | 4 |
| Base-emitter turn-on voltage (TR1) | VBEon | | | -1.1 | V | VCE = -2 V; IC = -100 mA; Tamb = 25 °C [1] | 4 |
| Collector capacitance (TR1) | Cc | | | 10 | pF | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 4 |
| Transition frequency (TR1) | fT | 100 | 300 | | MHz | VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C | 4 |
| Collector-base cut-off current (TR2) | ICBO | | | 100 | nA | VCB = 50 V; IE = 0 A; Tamb = 25 °C | 4 |
| Collector-emitter cut-off current (TR2) | ICEO | | | 1 | µA | VCE = 30 V; IB = 0 A; Tamb = 25 °C | 4 |
| Collector-emitter cut-off current (TR2) | ICEO | | | 50 | µA | VCE = 30 V; IB = 0 A; Tj = 150 °C | 4 |
| Emitter-base cut-off current (TR2) | IEBO | | | 400 | µA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 4 |
| DC current gain (TR2) | hFE | 30 | | | | VCE = 5 V; IC = 5 mA; Tamb = 25 °C | 4 |
| Collector-emitter saturation voltage (TR2) | VCEsat | | | 150 | mV | IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C | 4 |
| Off-state input voltage (TR2) | VI(off) | | 1.1 | 0.8 | V | VCE = 5 V; IC = 100 µA; Tamb = 25 °C | 4 |
| On-state input voltage (TR2) | VI(on) | 2.5 | 1.8 | | V | VCE = 0.3 V; IC = 10 mA; Tamb = 25 °C | 4 |
| Bias resistor 1 (input) (TR2) | R1 | 7 | 10 | 13 | kΩ | [2] | 4 |
| Bias resistor ratio R2/R1 (TR2) | R2/R1 | 0.8 | 1 | 1.2 | | [2] | 4 |
| Collector capacitance (TR2) | Cc | | | 2.5 | pF | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 4 |
## CAD (KiCad official)
- Symbol: `PBLS4003Y`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `pbls4003y-etched.step` / `pbls4003y-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pbls4003y.step` / `pbls4003y.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PBLS4003Y.pdf) (11 pp, sha256 `8ff66bd6d7bad546`, retrieved 2026-10-17, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pbls4003y-datasheet.pdf)