component
PBHV9115T
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Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PBHV9115T
Nexperia · Bipolar (BJT) · SOT-23
PBHV9115T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the PNP transistor; the datasheet limits peak base current IBM to -400 mA (single pulse, tp ≤ 1 ms). |
| 2 | E | passive | Emitter terminal of the PNP transistor; the emitter-base voltage VEBO is limited to -6 V with open collector. |
| 3 | C | passive | Collector terminal of the PNP transistor; the datasheet limits VCBO to -200 V, VCEO to -150 V, IC to -1 A and peak ICM to -2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | -200 | V | open emitter | 3 | ||
| collector-emitter voltage | VCEO | -150 | V | open base | 3 | ||
| emitter-base voltage | VEBO | -6 | V | open collector | 3 | ||
| collector current | IC | -1 | A | 3 | |||
| peak collector current | ICM | -2 | A | 3 | |||
| peak base current | IBM | -400 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| total power dissipation | Ptot | 300 | mW | Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided copper, standard footprint | 3 | ||
| junction temperature | Tj | 150 | °C | 3 | |||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 417 | K/W | in free air; device mounted on FR4 PCB, single-sided copper, standard footprint | 4 | ||
| thermal resistance from junction to solder point | Rth(j-sp) | 70 | K/W | 4 | |||
| collector-base cut-off current | ICBO | -100 | nA | VCB = -120 V; IE = 0 A; Tamb = 25 °C | 5 | ||
| collector-base cut-off current | ICBO | -10 | µA | VCB = -120 V; IE = 0 A; Tj = 150 °C | 5 | ||
| emitter-base cut-off current | IEBO | -100 | nA | VEB = -4 V; IC = 0 A; Tamb = 25 °C | 5 | ||
| collector-emitter cut-off current | ICES | -100 | nA | VCE = -120 V; VBE = 0 V; Tamb = 25 °C | 5 | ||
| DC current gain | hFE | 100 | 220 | VCE = -10 V; IC = -50 mA; Tamb = 25 °C | 5 | ||
| DC current gain | hFE | 10 | 30 | VCE = -10 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 5 | ||
| collector-emitter saturation voltage | VCEsat | -60 | -120 | mV | IC = -100 mA; IB = -10 mA; Tamb = 25 °C | 5 | |
| collector-emitter saturation voltage | VCEsat | -50 | -100 | mV | IC = -100 mA; IB = -20 mA; Tamb = 25 °C | 5 | |
| collector-emitter saturation voltage | VCEsat | -150 | -300 | mV | IC = -500 mA; IB = -100 mA; Tamb = 25 °C | 5 | |
| base-emitter saturation voltage | VBEsat | -1.05 | -1.2 | V | IC = -1 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 5 |
CAD (KiCad official)
- Symbol:
PBHV9115T - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pbhv9115t-etched.step/pbhv9115t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbhv9115t.step/pbhv9115t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (12 pp, sha256
cc5d2bfb13528a31, retrieved 2026-10-18, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PBHV9115T
**Nexperia** · Bipolar (BJT) · SOT-23
PBHV9115T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the PNP transistor; the datasheet limits peak base current IBM to -400 mA (single pulse, tp ≤ 1 ms). |
| 2 | E | passive | Emitter terminal of the PNP transistor; the emitter-base voltage VEBO is limited to -6 V with open collector. |
| 3 | C | passive | Collector terminal of the PNP transistor; the datasheet limits VCBO to -200 V, VCEO to -150 V, IC to -1 A and peak ICM to -2 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | | | -200 | V | open emitter | 3 |
| collector-emitter voltage | VCEO | | | -150 | V | open base | 3 |
| emitter-base voltage | VEBO | | | -6 | V | open collector | 3 |
| collector current | IC | | | -1 | A | | 3 |
| peak collector current | ICM | | | -2 | A | | 3 |
| peak base current | IBM | | | -400 | mA | single pulse; tp ≤ 1 ms | 3 |
| total power dissipation | Ptot | | | 300 | mW | Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided copper, standard footprint | 3 |
| junction temperature | Tj | | | 150 | °C | | 3 |
| ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| thermal resistance from junction to ambient | Rth(j-a) | | | 417 | K/W | in free air; device mounted on FR4 PCB, single-sided copper, standard footprint | 4 |
| thermal resistance from junction to solder point | Rth(j-sp) | | | 70 | K/W | | 4 |
| collector-base cut-off current | ICBO | | | -100 | nA | VCB = -120 V; IE = 0 A; Tamb = 25 °C | 5 |
| collector-base cut-off current | ICBO | | | -10 | µA | VCB = -120 V; IE = 0 A; Tj = 150 °C | 5 |
| emitter-base cut-off current | IEBO | | | -100 | nA | VEB = -4 V; IC = 0 A; Tamb = 25 °C | 5 |
| collector-emitter cut-off current | ICES | | | -100 | nA | VCE = -120 V; VBE = 0 V; Tamb = 25 °C | 5 |
| DC current gain | hFE | 100 | 220 | | | VCE = -10 V; IC = -50 mA; Tamb = 25 °C | 5 |
| DC current gain | hFE | 10 | 30 | | | VCE = -10 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 5 |
| collector-emitter saturation voltage | VCEsat | | -60 | -120 | mV | IC = -100 mA; IB = -10 mA; Tamb = 25 °C | 5 |
| collector-emitter saturation voltage | VCEsat | | -50 | -100 | mV | IC = -100 mA; IB = -20 mA; Tamb = 25 °C | 5 |
| collector-emitter saturation voltage | VCEsat | | -150 | -300 | mV | IC = -500 mA; IB = -100 mA; Tamb = 25 °C | 5 |
| base-emitter saturation voltage | VBEsat | | -1.05 | -1.2 | V | IC = -1 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 5 |
## CAD (KiCad official)
- Symbol: `PBHV9115T`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pbhv9115t-etched.step` / `pbhv9115t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pbhv9115t.step` / `pbhv9115t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PBHV9115T.pdf) (12 pp, sha256 `cc5d2bfb13528a31`, retrieved 2026-10-18, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pbhv9115t-datasheet.pdf)