component

PBHV8550XF

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 21d ago
viewers pbhv8550xf: viewers · Ray 21d ago
package.json Publish 0.1.0 · Ray 21d ago
page.json pbhv8550xf: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray 16d ago
pbhv8550xf-etched.glb pbhv8550xf: factory component page (tier=lcsc) · Ray 21d ago
pbhv8550xf-etched.step pbhv8550xf: factory component page (tier=lcsc) · Ray 21d ago
pbhv8550xf-hero.glb pbhv8550xf: hero GLB from the etched model (keeps the MPN mark) · Ray 21d ago
pbhv8550xf-hero.overlay.json Publish 0.1.0 · Ray 21d ago
pbhv8550xf.glb Publish 0.1.0 · Ray 21d ago
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pbhv8550xf.kicad_sym Publish 0.1.0 · Ray 21d ago
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pbhv8550xf.step Publish 0.1.0 · Ray 21d ago
README.md pbhv8550xf: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray 16d ago

PBHV8550XF

Nexperia · Bipolar (BJT) · SOT-89

PBHV8550XF from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter terminal of the NPN BISS transistor; device limits are VEBO 6 V, IC 150 mA continuous and ICM 0.5 A peak.
2 C passive Collector terminal of the NPN BISS transistor; device limits are VCEO 500 V, VCBO 500 V, IC 150 mA continuous and ICM 0.5 A peak.
3 B passive Base terminal of the NPN BISS transistor; peak base current IBM is limited to 200 mA (single pulse, tp ≤ 1 ms).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 500 V open emitter 2
Collector-emitter voltage VCEO 500 V open base 2
Collector-emitter peak voltage VCESM 500 V VBE = 0 V 2
Emitter-base voltage VEBO 6 V open collector 2
Collector current IC 150 mA 2
Peak collector current ICM 0.5 A 2
Peak base current IBM 200 mA single pulse; tp ≤ 1 ms 2
Total power dissipation Ptot 520 mW Tamb ≤ 25 °C; footnote [1]: FR4 PCB, single-sided copper, tin-plated and standard footprint 2
Total power dissipation Ptot 1.5 W Tamb ≤ 25 °C; footnote [2]: FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -55 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 241 K/W in free air; footnote [1]: FR4 PCB, single-sided copper, tin-plated and standard footprint 3
Thermal resistance from junction to ambient Rth(j-a) 84 K/W in free air; footnote [2]: FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2 3
Thermal resistance from junction to solder point Rth(j-sp) 20 K/W 3
Collector-base breakdown voltage V(BR)CBO 500 V IC = 100 µA; IE = 0 A; Tamb = 25 °C 4
Collector-emitter breakdown voltage (base shorted) V(BR)CES 500 V IC = 2.5 mA; VBE = 0 V; Tamb = 25 °C 4
Emitter-base breakdown voltage (collector open) V(BR)EBO 6 V IE = 100 µA; IC = 0 A; Tamb = 25 °C 4
Collector-base cut-off current ICBO 100 nA VCB = 360 V; IE = 0 A; Tamb = 25 °C 4
Collector-base cut-off current ICBO 50 µA VCB = 360 V; IE = 0 A; Tj = 150 °C 4
Collector-emitter cut-off current ICES 100 nA VCE = 360 V; VBE = 0 V; Tamb = 25 °C 4
Emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 4
DC current gain hFE 50 100 - VCE = 10 V; IC = 30 mA; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat 60 75 mV IC = 20 mA; IB = 2 mA; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat 65 90 mV IC = 50 mA; IB = 6 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C 4
Base-emitter saturation voltage VBEsat 0.75 0.9 V IC = 50 mA; IB = 5 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C 4

CAD (KiCad official)

  • Symbol: PBHV8550XF
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: pbhv8550xf-etched.step / pbhv8550xf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbhv8550xf.step / pbhv8550xf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 c3ad71ddf5d2875e, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF