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pbhv8550xf: specified limits as data (metadata.characteristics, 26 rows from the datasheet)

Ray ·d1ca54d635 ·16d ago ·parent a06e40e
2 files changed +353−1
README.md+33
@@ -21,6 +21,39 @@ PBHV8550XF from Nexperia, in a SOT-89. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-base voltage | VCBO |  |  | 500 | V | open emitter | 2 |+| Collector-emitter voltage | VCEO |  |  | 500 | V | open base | 2 |+| Collector-emitter peak voltage | VCESM |  |  | 500 | V | VBE = 0 V | 2 |+| Emitter-base voltage | VEBO |  |  | 6 | V | open collector | 2 |+| Collector current | IC |  |  | 150 | mA |  | 2 |+| Peak collector current | ICM |  |  | 0.5 | A |  | 2 |+| Peak base current | IBM |  |  | 200 | mA | single pulse; tp ≤ 1 ms | 2 |+| Total power dissipation | Ptot |  |  | 520 | mW | Tamb ≤ 25 °C; footnote [1]: FR4 PCB, single-sided copper, tin-plated and standard footprint | 2 |+| Total power dissipation | Ptot |  |  | 1.5 | W | Tamb ≤ 25 °C; footnote [2]: FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2 | 2 |+| Junction temperature | Tj |  |  | 150 | °C |  | 2 |+| Ambient temperature | Tamb | -55 |  | 150 | °C |  | 2 |+| Storage temperature | Tstg | -65 |  | 150 | °C |  | 2 |+| Thermal resistance from junction to ambient | Rth(j-a) |  |  | 241 | K/W | in free air; footnote [1]: FR4 PCB, single-sided copper, tin-plated and standard footprint | 3 |+| Thermal resistance from junction to ambient | Rth(j-a) |  |  | 84 | K/W | in free air; footnote [2]: FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2 | 3 |+| Thermal resistance from junction to solder point | Rth(j-sp) |  |  | 20 | K/W |  | 3 |+| Collector-base breakdown voltage | V(BR)CBO | 500 |  |  | V | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 4 |+| Collector-emitter breakdown voltage (base shorted) | V(BR)CES | 500 |  |  | V | IC = 2.5 mA; VBE = 0 V; Tamb = 25 °C | 4 |+| Emitter-base breakdown voltage (collector open) | V(BR)EBO | 6 |  |  | V | IE = 100 µA; IC = 0 A; Tamb = 25 °C | 4 |+| Collector-base cut-off current | ICBO |  |  | 100 | nA | VCB = 360 V; IE = 0 A; Tamb = 25 °C | 4 |+| Collector-base cut-off current | ICBO |  |  | 50 | µA | VCB = 360 V; IE = 0 A; Tj = 150 °C | 4 |+| Collector-emitter cut-off current | ICES |  |  | 100 | nA | VCE = 360 V; VBE = 0 V; Tamb = 25 °C | 4 |+| Emitter-base cut-off current | IEBO |  |  | 100 | nA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 4 |+| DC current gain | hFE | 50 | 100 |  | - | VCE = 10 V; IC = 30 mA; Tamb = 25 °C | 4 |+| Collector-emitter saturation voltage | VCEsat |  | 60 | 75 | mV | IC = 20 mA; IB = 2 mA; Tamb = 25 °C | 4 |+| Collector-emitter saturation voltage | VCEsat |  | 65 | 90 | mV | IC = 50 mA; IB = 6 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C | 4 |+| Base-emitter saturation voltage | VBEsat |  | 0.75 | 0.9 | V | IC = 50 mA; IB = 5 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C | 4 |+ ## CAD (KiCad official)  - Symbol: `PBHV8550XF`
page.json+320−1
@@ -149,6 +149,325 @@       "Package": "SOT-89",       "Category": "Transistors/Thyristors",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "c3ad71ddf5d2875e",+      "rows": [+        {+          "name": "Collector-base voltage",+          "symbol": "VCBO",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 500,+          "conditions": "open emitter",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector-emitter voltage",+          "symbol": "VCEO",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 500,+          "conditions": "open base",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector-emitter peak voltage",+          "symbol": "VCESM",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 500,+          "conditions": "VBE = 0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Emitter-base voltage",+          "symbol": "VEBO",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 6,+          "conditions": "open collector",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector current",+          "symbol": "IC",+          "kind": "absolute_maximum",+          "unit": "mA",+          "min": null,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Peak collector current",+          "symbol": "ICM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 0.5,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Peak base current",+          "symbol": "IBM",+          "kind": "absolute_maximum",+          "unit": "mA",+          "min": null,+          "typ": null,+          "max": 200,+          "conditions": "single pulse; tp ≤ 1 ms",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 520,+          "conditions": "Tamb ≤ 25 °C; footnote [1]: FR4 PCB, single-sided copper, tin-plated and standard footprint",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 1.5,+          "conditions": "Tamb ≤ 25 °C; footnote [2]: FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Junction temperature",+          "symbol": "Tj",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": null,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Ambient temperature",+          "symbol": "Tamb",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Storage temperature",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -65,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance from junction to ambient",+          "symbol": "Rth(j-a)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": null,+          "max": 241,+          "conditions": "in free air; footnote [1]: FR4 PCB, single-sided copper, tin-plated and standard footprint",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance from junction to ambient",+          "symbol": "Rth(j-a)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": null,+          "max": 84,+          "conditions": "in free air; footnote [2]: FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance from junction to solder point",+          "symbol": "Rth(j-sp)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Collector-base breakdown voltage",+          "symbol": "V(BR)CBO",+          "kind": "electrical",+          "unit": "V",+          "min": 500,+          "typ": null,+          "max": null,+          "conditions": "IC = 100 µA; IE = 0 A; Tamb = 25 °C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Collector-emitter breakdown voltage (base shorted)",+          "symbol": "V(BR)CES",+          "kind": "electrical",+          "unit": "V",+          "min": 500,+          "typ": null,+          "max": null,+          "conditions": "IC = 2.5 mA; VBE = 0 V; Tamb = 25 °C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Emitter-base breakdown voltage (collector open)",+          "symbol": "V(BR)EBO",+          "kind": "electrical",+          "unit": "V",+          "min": 6,+          "typ": null,+          "max": null,+          "conditions": "IE = 100 µA; IC = 0 A; Tamb = 25 °C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Collector-base cut-off current",+          "symbol": "ICBO",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VCB = 360 V; IE = 0 A; Tamb = 25 °C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Collector-base cut-off current",+          "symbol": "ICBO",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "VCB = 360 V; IE = 0 A; Tj = 150 °C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Collector-emitter cut-off current",+          "symbol": "ICES",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VCE = 360 V; VBE = 0 V; Tamb = 25 °C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Emitter-base cut-off current",+          "symbol": "IEBO",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VEB = 5 V; IC = 0 A; Tamb = 25 °C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "DC current gain",+          "symbol": "hFE",+          "kind": "electrical",+          "unit": "-",+          "min": 50,+          "typ": 100,+          "max": null,+          "conditions": "VCE = 10 V; IC = 30 mA; Tamb = 25 °C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Collector-emitter saturation voltage",+          "symbol": "VCEsat",+          "kind": "electrical",+          "unit": "mV",+          "min": null,+          "typ": 60,+          "max": 75,+          "conditions": "IC = 20 mA; IB = 2 mA; Tamb = 25 °C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Collector-emitter saturation voltage",+          "symbol": "VCEsat",+          "kind": "electrical",+          "unit": "mV",+          "min": null,+          "typ": 65,+          "max": 90,+          "conditions": "IC = 50 mA; IB = 6 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Base-emitter saturation voltage",+          "symbol": "VBEsat",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 0.75,+          "max": 0.9,+          "conditions": "IC = 50 mA; IB = 5 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C",+          "source_page": 4,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -190,4 +509,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}