component
PBHV8540X
Public Made by Adomby adom
Nexperia Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPBHV8540X
Nexperia · Bipolar Transistors - BJT · SOT-89
PBHV8540X from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the NPN transistor; VEBO limit is 6 V (open collector). |
| 2 | C | passive | Collector of the NPN transistor; VCEO max 400 V (open base), VCBO/VCESM max 500 V, IC max 0.5 A, ICM max 1 A. |
| 3 | B | passive | Base of the NPN transistor; peak base current IBM max 200 mA (single pulse, tp ≤ 1 ms). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | 500 | V | open emitter | 3 | ||
| collector-emitter voltage | VCEO | 400 | V | open base | 3 | ||
| collector-emitter peak voltage | VCESM | 500 | V | VBE = 0 V | 3 | ||
| emitter-base voltage | VEBO | 6 | V | open collector | 3 | ||
| collector current | IC | 0.5 | A | 3 | |||
| peak collector current | ICM | 1 | A | 3 | |||
| peak base current | IBM | 200 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| total power dissipation (standard footprint) | Ptot | 0.52 | W | Tamb ≤ 25 °C; FR4 PCB, standard footprint | 3 | ||
| total power dissipation (6 cm2 collector pad) | Ptot | 1.5 | W | Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 6 cm2 | 3 | ||
| junction temperature | Tj | 150 | °C | 3 | |||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| thermal resistance junction to ambient (standard footprint) | Rth(j-a) | 240 | K/W | in free air; FR4 PCB, standard footprint | 4 | ||
| thermal resistance junction to ambient (6 cm2 collector pad) | Rth(j-a) | 83 | K/W | in free air; FR4 PCB, mounting pad for collector 6 cm2 | 4 | ||
| thermal resistance junction to solder point | Rth(j-sp) | 20 | K/W | 4 | |||
| collector-base cut-off current | ICBO | 100 | nA | VCB = 320 V; IE = 0 A; Tamb = 25 °C | 5 | ||
| collector-base cut-off current | ICBO | 10 | µA | VCB = 320 V; IE = 0 A; Tj = 150 °C | 5 | ||
| collector-emitter cut-off current | ICES | 100 | nA | VCE = 320 V; VBE = 0 V; Tamb = 25 °C | 5 | ||
| emitter-base cut-off current | IEBO | 100 | nA | VEB = 4 V; IC = 0 A; Tamb = 25 °C | 5 | ||
| DC current gain | hFE | 100 | 200 | VCE = 10 V; IC = 50 mA; Tamb = 25 °C | 5 | ||
| DC current gain | hFE | 80 | 150 | VCE = 10 V; IC = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed | 5 | ||
| DC current gain | hFE | 10 | 20 | VCE = 10 V; IC = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 5 | ||
| collector-emitter saturation voltage | VCEsat | 100 | 200 | mV | IC = 100 mA; IB = 10 mA; Tamb = 25 °C | 5 | |
| collector-emitter saturation voltage | VCEsat | 60 | 90 | mV | IC = 100 mA; IB = 20 mA; Tamb = 25 °C | 5 | |
| collector-emitter saturation voltage | VCEsat | 135 | 250 | mV | IC = 300 mA; IB = 60 mA; Tamb = 25 °C | 5 | |
| base-emitter saturation voltage | VBEsat | 0.91 | 1.1 | V | IC = 300 mA; IB = 60 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 5 | |
| delay time | td | 50 | ns | VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A; Tamb = 25 °C | 5 | ||
| rise time | tr | 6200 | ns | VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A; Tamb = 25 °C | 5 | ||
| turn-on time | ton | 6250 | ns | VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A; Tamb = 25 °C | 5 | ||
| storage time | ts | 800 | ns | VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A; Tamb = 25 °C | 5 | ||
| fall time | tf | 2200 | ns | VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A; Tamb = 25 °C | 5 | ||
| turn-off time | toff | 3000 | ns | VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A; Tamb = 25 °C | 5 | ||
| transition frequency | fT | 30 | MHz | VCE = 10 V; IC = 100 mA; f = 100 MHz; Tamb = 25 °C | 5 | ||
| collector capacitance | Cc | 4 | pF | VCB = 20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 5 | ||
| emitter capacitance | Ce | 165 | pF | VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C | 5 |
CAD (KiCad official)
- Symbol:
PBHV8540X - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
pbhv8540x-etched.step/pbhv8540x-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbhv8540x.step/pbhv8540x.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (13 pp, sha256
77ea7e6069f5a01e, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).