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PBHV8540T

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PBHV8540T

Nexperia · Bipolar (BJT) · SOT-23

PBHV8540T from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN transistor; IBM peak base current is limited to 200 mA for a single pulse with tp ≤ 1 ms.
2 E passive Emitter terminal of the NPN transistor; emitter-base voltage VEBO is limited to 6 V with the collector open.
3 C passive Collector terminal of the NPN transistor; VCEO is limited to 400 V (open base), VCBO to 500 V, continuous IC to 0.5 A and peak ICM to 1 A.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (open emitter) VCBO 500 V open emitter 3
Collector-emitter voltage (open base) VCEO 400 V open base 3
Collector-emitter peak voltage VCESM 500 V VBE = 0 V 3
Emitter-base voltage (open collector) VEBO 6 V open collector 3
Collector current IC 0.5 A 3
Peak collector current ICM 1 A 3
Peak base current IBM 200 mA single pulse; tp ≤ 1 ms 3
Total power dissipation Ptot 300 mW Tamb ≤ 25 °C 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance from junction to ambient Rth(j-a) 417 K/W in free air 4
Thermal resistance from junction to solder point Rth(j-sp) 70 K/W 4
Collector-base cut-off current ICBO 100 nA VCB = 320 V; IE = 0 A; Tamb = 25 °C 5
Collector-base cut-off current ICBO 10 µA VCB = 320 V; IE = 0 A; Tj = 150 °C 5
Emitter-base cut-off current IEBO 100 nA VEB = 4 V; IC = 0 A; Tamb = 25 °C 5
Collector-emitter cut-off current ICES 100 nA VCE = 320 V; VBE = 0 V; Tamb = 25 °C 5
DC current gain hFE 100 200 VCE = 10 V; IC = 50 mA; Tamb = 25 °C 5
DC current gain hFE 80 150 VCE = 10 V; IC = 100 mA; Tamb = 25 °C 5
DC current gain hFE 10 20 VCE = 10 V; IC = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 5
Collector-emitter saturation voltage VCEsat 100 200 mV IC = 100 mA; IB = 10 mA; Tamb = 25 °C 5
Collector-emitter saturation voltage VCEsat 60 90 mV IC = 100 mA; IB = 20 mA; Tamb = 25 °C 5
Collector-emitter saturation voltage VCEsat 135 250 mV IC = 300 mA; IB = 60 mA; Tamb = 25 °C 5
Base-emitter saturation voltage VBEsat 0.91 1.1 V IC = 300 mA; IB = 60 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 5

CAD (KiCad official)

  • Symbol: PBHV8540T
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pbhv8540t-etched.step / pbhv8540t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbhv8540t.step / pbhv8540t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 98be5cec4bb8ffae, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF