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pam8019kgr-etched.step	pam8019kgr: factory component page (tier=lcsc) · Ray	17d ago
pam8019kgr-hero.glb	pam8019kgr: hero GLB from the etched model (keeps the MPN mark) · Ray	17d ago
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PAM8019KGR

Diodes Incorporated · Global Sourcing Parts · QFN-20-EP(4x4)

PAM8019KGR from Diodes Incorporated, in a QFN-20-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	ROUTN	output	Right-channel class-D power amplifier output, which the datasheet describes as the positive output (label and description conflict with pin 19; see review).
2	HPROUT	output	Headphone right-channel output of the Class AB headphone amplifier, used when HP/SPK is high.
3	SD	input	Full-chip shutdown control input, active low, with an internal pullup so it may be left floating; VIH min 1.4 V and VIL max 0.6 V.
4	Bypass	passive	Bias voltage for the power amplifier; a ceramic bypass capacitor of 0.47 µF to 1.0 µF is recommended, and its value sets the startup rate.
5	RIN	input	Negative (inverting) input of the right-channel power amplifier.
6	GND	power_in	Ground connection.
7	LIN	input	Negative (inverting) input of the left-channel power amplifier.
8	Volume	input	Internal gain setting input; connect to VDD to set the maximum gain to +20 dB.
9	Mute	input	Mute control input, active high: logic high disables the class-D outputs and logic low enables them; VIH min 1.4 V, VIL max 0.6 V, with internal pulldown so it may be left floating.
10	HP/SPK	input	Output mode control input: high selects headphone mode and low selects speaker mode; high threshold 0.8 x VDD to VDD, low threshold 0 to 1.0 V.
11	PL	passive	Power limit reference voltage for the non-clip power limit (NCPL) function, set through the resistor network described in the application information; NCPL is disabled when PL is floating.
12	UVP	input	Undervoltage protection input with a 1.2 V shutdown threshold, set externally by a resistor divider that also sets hysteresis.
13	VDD	power_in	Supply voltage, 2.8 V to 5.5 V.
14	HPLOUT	output	Headphone left-channel output of the Class AB headphone amplifier, used when HP/SPK is high.
15	LOUTN	output	Left-channel class-D power amplifier negative output.
16	VDD	power_in	Supply voltage, 2.8 V to 5.5 V.
17	LOUTP	output	Left-channel class-D power amplifier positive output.
18	GND	power_in	Ground connection.
19	ROUTP	output	Right-channel class-D power amplifier output, which the datasheet describes as the negative output (label and description conflict with pin 1; see review).
20	VDD	power_in	Supply voltage, 2.8 V to 5.5 V.
21	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	Diodes Incorporated
Package	QFN-20-EP(4x4)
Category	Global Sourcing Parts
Pins	21

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Supply Voltage	VDD	-0.3		6	V		4
Input Voltage (LIN, RIN, SD, Mute, HP/SPK)	VIN	-0.3			V		4
Maximum Junction Temperature	TJ			150	°C		4
Storage Temperature Range	TSTG	-65		150	°C		4
Maximum Soldering Temperature Range	TSDR			300	°C	5 seconds	4
Supply Voltage Range	VDD	2.8		5.5	V		4
High-Level Threshold Voltage, SD, Mute	VIH	2			V		4
Low-Level Threshold Voltage, SD, Mute	VIL	0		0.8	V		4
Low-Level Threshold Voltage, HP/SPK	VIL	0		1	V		4
Common Mode Input Voltage	VICM	1			V		4
Ambient Operation Temperature Range	TA	-40		85	°C		4
Junction Temperature Range	TJ	-40		125	°C		4
Supply Voltage Range	VDD	2.8		5.5	V		5
Oscillator Frequency	fOSC	200	250	300	kHz		5
Input Resistance (BTL)	RI			33	kΩ	Gain = 20dB	5
Input Resistance (SE)	RI			56	kΩ	Gain = 3.5dB	5
Output Power	PO	1.5	1.7		W	THD+N = 10%, f = 1kHz, Rl = 8Ω	5
Output Power	PO	2.8	3		W	THD+N = 10%, f = 1kHz, Rl = 4Ω	5
Efficiency	η	85	90		%	PO = 1.7W, f = 1kHz, Rl = 8Ω	5
Efficiency	η	80	88		%	PO = 3W, f = 1kHz, Rl = 4Ω	5
Shutdown Current	ISD			1	µA	VMUTE = 0, VSD = 0V, No Load	5
SD Input High	VIH	1.4			V		5
SD Input Low	VIL			0.6	V		5
Mute Input High	VMH	1.4			V		5
Mute Input Low	VML			0.6	V		5
Thermal Resistance, Junction to Ambient U-QFN4040-20	θJA		45		°C/W		4
Ambient Operation Temperature Range U-QFN4040-20	θJC		7		°C/W		4

CAD (KiCad official)

Symbol: PAM8019KGR
Footprint: Package_DFN_QFN:QFN-20-1EP_4x4mm_P0.5mm_EP2.5x2.5mm
3D model: QFN-20-EP(4x4) (KiCad packages3D, STEP)
3D model files: pam8019kgr-etched.step / pam8019kgr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pam8019kgr.step / pam8019kgr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Diodes Incorporated datasheet (12 pp, sha256 2b5649780e25538b, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF