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PAM2312AABADJ

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Diodes Incorporated DC-DC Converters, TSOT-25. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PAM2312AABADJ

Diodes Incorporated · DC-DC Converters · TSOT-25

PAM2312AABADJ from Diodes Incorporated, in a TSOT-25. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EN input Enable control input: forcing the pin above 1.5V enables the chip, and pulling it below 0.3V shuts the device down.
2 GND power_in Ground reference for the device; all voltages are specified with respect to ground.
3 SW output Drains of the internal main and synchronous power MOSFETs (switching node); absolute maximum SW pin voltage is -0.3 V to (VIN + 0.3) V.
4 VIN power_in Chip main power supply pin, operating over 2.5V to 5.5V with an absolute maximum input voltage of 6.0V.
5 VOUT/FB input In the adjustable version this is the FB pin, the feedback input to the internal error amplifier with a 0.6V threshold voltage (in fixed-output versions it is the VOUT sense pin feeding an internal resistive divider).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSOT-25
Category Power Management (PMIC)
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Voltage Range VIN 2.5 5.5 V 4
Regulated Feedback Voltage VFB 0.588 0.6 0.612 V 4
Regulated Output Voltage Accuracy VO -3 3 % IO = 100mA 4
Output Voltage Line Regulation LNR 0.2 0.5 %/V VIN = 2.5V to 5v, IO = 10mA 4
Output Voltage Load Regulation LDR 0.5 1.5 % IO = 800mA 4
Quiescent Current IQ 40 70 µA No Load 4
Shutdown Current ISD 1 µA VEN = 0V 4
Oscillator Frequency fOSC 1.2 1.5 1.8 MHz VO = 100% 4
Drain-Source On-State Resistance (P MOSFET) RDS(ON) 0.3 0.45 Ω IDS = 100mA 4
Drain-Source On-State Resistance (N MOSFET) RDS(ON) 0.35 0.5 Ω IDS = 100mA 4
SW Leakage Current ILSW 1 µA 4
EN Threshold High VEH 1.5 V 4
EN Threshold Low VEL 0.3 V 4
Input Voltage (absolute maximum) -0.3 6 V 3
EN, FB Pin Voltage (absolute maximum) -0.3 V 3
SW Pin Voltage (absolute maximum) -0.3 V 3
Junction Temperature (absolute maximum) 150 °C 3
Storage Temperature Range -65 150 °C 3
Soldering Temperature 300 °C 5s 3
Supply Voltage 2.5 5.5 V 3
Operation Temperature Range -40 85 °C 3
Junction Temperature Range -40 125 °C 3
Thermal Resistance (Junction to Case) θJC 130 °C/W TSOT25 (Note 4) 3
Thermal Resistance (Junction to Ambient) θJA 250 °C/W TSOT25 3
Internal Power Dissipation PD 400 mW TSOT25 3

CAD (KiCad official)

  • Symbol: PAM2312AABADJ
  • Footprint: Package_TO_SOT_SMD:TSOT-23-5
  • 3D model: TSOT-25 (KiCad packages3D, STEP)
  • 3D model files: pam2312aabadj-etched.step / pam2312aabadj-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pam2312aabadj.step / pam2312aabadj.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (14 pp, sha256 c63f6ed90bae0a6e, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF