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PAM2305CGFADJ

Diodes Incorporated · DC-DC Converters · DFN-6-EP(2x2)

PAM2305CGFADJ from Diodes Incorporated, in a DFN-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected No connection on the DFN2x2-6L package; this pin is not connected internally.
2 EN input Enable control input: a voltage above 1.5V enables the chip and a voltage below 0.3V shuts down the device.
3 VIN power_in Chip main power supply pin, specified for 2.5V to 5.5V operation with an absolute maximum rating of -0.3V to +6.0V.
4 SW output Drains of the internal main and synchronous power MOSFETs; the SW pin voltage is rated -0.3V to (VIN + 0.3)V.
5 GND power_in Ground reference pin for the device.
6 VOUT/FB input Output voltage feedback pin, which uses an internal resistive divider on the fixed-output versions, or the feedback input to the internal error amplifier with a 0.6V threshold on the adjustable (ADJ) version such as PAM2305CGFADJ, with FB rated -0.3V to VIN.
7 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package DFN-6-EP(2x2)
Category Power Management (PMIC)
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Voltage Range VIN 2.5 5.5 V 4
Regulated Feedback Voltage VFB 0.588 0.6 0.612 V 4
Regulated Output Voltage Accuracy VO -3 3 % IO = 100mA 4
Output Voltage Line Regulation LNR 0.2 0.5 %/V VIN = 2.5V to 5V, IO = 10mA 4
Output Voltage Load Regulation LDR 0.5 1.5 % IO = 1mA to 800mA 4
Quiescent Current IQ 40 70 µA No load 4
Shutdown Current ISD 0.1 1 µA VEN = 0V 4
Oscillator Frequency fOSC 1.2 1.5 1.8 MHz VO = 100% 4
Drain-Source On-State Resistance (P MOSFET) RDS(ON) 0.3 0.45 Ω IDS = 100mA 4
Drain-Source On-State Resistance (N MOSFET) RDS(ON) 0.35 0.5 Ω IDS = 100mA 4
SW Leakage Current ILSW 1 µA 4
Input Voltage (absolute maximum) VIN -0.3 6 V 3
EN, FB Pin Voltage -0.3 V Upper limit printed as VIN 3
SW Pin Voltage -0.3 V Upper limit printed as VIN +0.3 3
Junction Temperature 150 °C 3
Storage Temperature Range -65 150 °C 3
Soldering Temperature 300 °C 5 sec 3
Supply Voltage 2.5 5.5 V 3
Operation Temperature Range -40 85 °C 3
Junction Temperature Range -40 125 °C 3
Thermal Resistance (Junction to Case), DFN2x2-6 θJC 25 °C/W 3
Thermal Resistance (Junction to Ambient), DFN2x2-6 θJA 68 °C/W 3
Internal Power Dissipation, DFN2x2-6 PD 980 mW 3

CAD (KiCad official)

  • Symbol: PAM2305CGFADJ
  • Footprint: Package_DFN_QFN:DFN-6-1EP_2x2mm_P0.65mm_EP1x1.6mm
  • 3D model: DFN-6-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: pam2305cgfadj-etched.step / pam2305cgfadj-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pam2305cgfadj.step / pam2305cgfadj.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (17 pp, sha256 4916f455ea4c71db, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF