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Contents

README

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PAM2301CAAB120

Diodes Incorporated · DC-DC Converters · TSOT-25

PAM2301CAAB120 from Diodes Incorporated, in a TSOT-25. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EN input Enable control input: a voltage above 1.5V enables the chip and a voltage below 0.3V shuts the device down.
2 GND power_in Ground reference pin for the device.
3 SW output Drains of the internal main and synchronous power MOSFETs, forming the switching node that must be kept away from the sensitive VFB node.
4 VIN power_in Power supply input, rated 2.5V to 5.5V per the recommended operating conditions.
5 VOUT/FB input Output voltage feedback pin for the internal resistive divider (VOUT) and feedback input to the error amplifier with a 0.6V threshold (FB).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSOT-25
Category Power Management (PMIC)
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Voltage Range VIN 2.5 5.5 V 3
Regulated Feedback Voltage VFB 0.588 0.6 0.612 V 3
Regulated Output Voltage Accuracy VO -3 3 % IO = 100mA 3
Output Voltage Line Regulation LNR 0.2 0.5 %/V VIN = 2.5V to 5V, IO = 10mA 3
Output Voltage Load Regulation LDR 0.5 1.5 % IO = 1mA to 800mA 3
Quiescent Current IQ 40 70 µA No Load 3
Shutdown Current ISD 0.1 1 µA VEN = 0V 3
Oscillator Frequency fOSC 1.2 1.5 1.8 MHz VO = 100% 3
Drain-Source On-State Resistance (P MOSFET) RDS(ON) 0.3 0.45 Ω IDS = 100mA 3
Drain-Source On-State Resistance (N MOSFET) RDS(ON) 0.35 0.5 Ω 3
SW Leakage Current ILSW 0.01 1 µA 3
EN Threshold High VEH 1.5 V 3
EN Threshold Low VEL 0.3 V 3
Input Voltage (absolute maximum) VIN -0.3 6 V 3
EN, FB Pin Voltage (absolute maximum) -0.3 V upper limit printed as VIN 3
SW Pin Voltage (absolute maximum) -0.3 V upper limit printed as (VIN + 0.3) 3
Junction Temperature (absolute maximum) 150 °C 3
Storage Temperature Range -65 150 °C 3
Soldering Temperature 300 °C 5s 3
Supply Voltage 2.5 5.5 V 3
Operation Temperature Range -40 85 °C 3
Junction Temperature Range -40 125 °C 3
Thermal Resistance (Junction to Case) θJC 130 °C/W 3
Thermal Resistance (Junction to Ambient) θJC 250 °C/W 3
Internal Power Dissipation PD 400 mW 3

CAD (KiCad official)

  • Symbol: PAM2301CAAB120
  • Footprint: Package_TO_SOT_SMD:TSOT-23-5
  • 3D model: TSOT-25 (KiCad packages3D, STEP)
  • 3D model files: pam2301caab120-etched.step / pam2301caab120-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pam2301caab120.step / pam2301caab120.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (13 pp, sha256 b0c0d7e5d6d9ae80, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF