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PA110BDA-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PA110BDA-VB

VBsemi Elec · MOSFETs · TO-252

PA110BDA-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold measured at VDS = VGS, ID = 250 µA.
2 D passive Drain (center pin, also connected to the tab); drain-source voltage rated 100 V, continuous drain current 15 A at TC = 25 °C.
3 S passive Source; continuous source current (diode conduction) is rated at 3 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 3.5 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 40 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.14 Ω VGS = 10 V, ID = 3 A, TJ = 175 °C 2
Total Gate Charge Qg 24 41 nC VDS = 50 V, VGS = 10 V, ID = 3 A 2
Gate Resistance Rg 0.5 2.9 Ω 2
Turn-On Delay Time td(on) 15 25 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 50 75 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 60 90 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Pulsed Current ISM 5 A 2
Diode Forward Voltage VSD 0.9 1.5 V IF = 3 A, VGS = 0 V 2
Source-Drain Reverse Recovery Time trr 180 250 ns IF = 3 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 13 A TJ = 175 °C, TC = 125 °C 1
Pulsed Drain Current IDM 40 A 1
Continuous Source Current (Diode Conduction) IS 3 A 1
Avalanche Current IAS 3 A 1
Single Pulse Avalanche Energy EAS 18 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 96 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient RthJA 15 18 °C/W t = 10 s 1
Junction-to-Ambient RthJA 40 50 °C/W Steady state 1
Junction-to-Case (Drain) RthJC 0.85 1.1 °C/W 1

CAD (KiCad official)

  • Symbol: PA110BDA-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: pa110bda-vb-etched.step / pa110bda-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pa110bda-vb.step / pa110bda-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 f51edf5f75a9595d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF