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Ray p75n02ldg-vb: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain S… 269def9 23d ago
{
  "schema_version": 1,
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  "slug": "p75n02ldg-vb",
  "title": "P75N02LDG-VB",
  "brief": "VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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  "component": {
    "mpn": "P75N02LDG-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TO-252",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609135871446691840",
    "parts": {
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      "footprint": "p75n02ldg-vb.kicad_mod",
      "model_3d": "p75n02ldg-vb-etched.glb",
      "model_3d_plain": "p75n02ldg-vb.glb",
      "model_3d_step": "p75n02ldg-vb-etched.step",
      "model_3d_step_plain": "p75n02ldg-vb.step",
      "lbr": "p75n02ldg-vb.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated MOS control terminal. VGS(th) = 1.5 V min / 2.5 V max @ ID = 250 µA; VGS absolute maximum ±20 V. Drive at VGS = 10 V for RDS(on) ≈ 0.002 Ω or VGS = 4.5 V for RDS(on) ≈ 0.003 Ω."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. Channel terminal / power switch node. VDS max = 30 V; continuous ID = 100 A (TC = 25 °C), IDM (pulsed) = 300 A. In TO-252, pin 2 is electrically the same as the tab (pin 4)."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. Return terminal of the N-channel MOSFET and anode of the intrinsic body diode (VSD typ. 0.8 V @ IS = 22 A). Reference for VGS and VDS."
      },
      {
        "number": "4",
        "name": "D",
        "type": "passive",
        "description": "Drain tab (exposed metal pad, TO-252AA). Electrically identical to pin 2; provides the main thermal path to the PCB (RthJC = 0.5 °C/W typ.). Solder to a copper pour for rated current handling."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609135871446691840",
        "pages": null,
        "sha256": "5e8144c7353ebee4",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 4,
        "described": 4,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "p75n02ldg-vb-etched.step",
        "role": "eda",
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        "sha256": "e54ff789024180fdeadfda6c024e8291d37421404c35877af7d2bfb48d4c2ff7",
        "checked": "2026-10-16",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "4"
    }
  },
  "variants": [
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      "mpn": "P75N02LDG-VB",
      "kind": "packaging"
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  "discovery_triggers": [
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  "discovery_pitch": "P75N02LDG-VB (VBsemi Elec) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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  "files": [
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  "visibility": {
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  "updated_at": "2026-09-25T04:03:02.529Z"
}