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P5504EDG

UMW · MOSFETs · TO-252

P5504EDG from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE pin of the P-channel MOSFET; gate-source voltage is rated VGS ±20V.
2 D passive DRAIN pin, tied to the mounting tab; drain-source voltage is rated VDS -40V.
3 S passive SOURCE pin of the MOSFET; the source-drain body diode is rated for pulsed current ISM -200A.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS -40 V VGS=0V, ID=-250µA 3
Gate-source leakage IGSS 100 nA VDS=0V, VGS=±20V 3
Zero gate voltage drain current IDSS -1 µA VGS=0V, VDS=-40V (TJ=25°C) 3
Zero gate voltage drain current IDSS -50 µA VGS=0V, VDS=-40V, TJ=125°C 3
Zero gate voltage drain current IDSS -150 µA VGS=0V, VDS=-40V, TJ=175°C 3
Drain-Source On-State Resistance RDS(ON) 17 mΩ VGS=-10V, ID=-17A 3
Drain-Source On-State Resistance RDS(ON) 29 mΩ VGS=-4.5V, ID=-14A 3
Input Capacitance Ciss 2872 3950 pF VDS=-25V, VGS=0V, f=1MHz 3
Output Capacitance Coss 508 635 pF VDS=-25V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 352 440 pF VDS=-25V, VGS=0V, f=1MHz 3
Total gate charge Qg 60 80 nC VDS=-30V, VGS=-10V, ID=-50A 3
Gate-source charge Qgs 5.7 8.6 nC VDS=-30V, VGS=-10V, ID=-50A 3
Gate-drain charge Qgd 14.7 22 nC VDS=-30V, VGS=-10V, ID=-50A 3
Gate resistance Rg 3 4.5 Ω f=1MHz 3
Turn-On Delay Time tD(on) 10 15 ns VDD=-20V, RL=0.4Ω, ID≈-50A 3
Rise Time tr 12 18 ns VDD=-20V, RL=0.4Ω, ID≈-50A 3
Turn-Off Delay Time tD(off) 40 60 ns VGEN=-10V, RG=1Ω 3
Fall time tf 16 24 ns VGEN=-10V, RG=1Ω 3
Pulsed Current ISM -200 A 3
Forward Voltage VSD -1.5 V IF=-50A, VGS=0V 3
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -50 A TC=25°C 1
Continuous Drain Current ID -39 A TC=125°C 1
Continuous Source Current (Diode Conduction) IS -50 A 1
Pulsed Drain Current IDM -200 A 1
Single Pulse Avalanche Current IAS -40 A 1
Single Pulse Avalanche Energy EAS 80 mJ L=0.1mH 1
Maximum Power Dissipation PD 3 W TA=25°C 1
Maximum Power Dissipation PD 136 W TC=25°C 1
Maximum Power Dissipation PD 45 W TC=125°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Junction-to-Ambient thermal resistance RthJA 50 °C/W PCB Mount 2
Junction-to-Foot (Drain) thermal resistance RthJC 1.1 °C/W 2

CAD (KiCad official)

  • Symbol: P5504EDG
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: p5504edg-etched.step / p5504edg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); p5504edg.step / p5504edg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 b5a174080bf81441, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF