P4SMA200A

Shandong Jingdao Microelectronics · ESD And Surge Protection (TVS/ESD) · SMA

P4SMA200A from Shandong Jingdao Microelectronics, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Cathode	passive	Cathode terminal of the unipolar P4SMA200A TVS diode, rated for 400 W peak pulse power on the 10/1000 µs waveform, with peak pulse power derated above TA = 25 °C per Fig. 2.
2	Anode	passive	Anode terminal of the unipolar P4SMA200A TVS diode, rated for 400 W peak pulse power on the 10/1000 µs waveform, with the transient clamped between anode and cathode.

Key specifications

Parameter	Value
Manufacturer	Shandong Jingdao Microelectronics
Package	SMA
Category	Circuit Protection
Pins	2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Breakdown voltage (min/max)	VBR	190		210	V	IT = 1 mA (Table 1, P4SMA200A unidirectional row)	2
Maximum clamp voltage	VC			274	V	@ IPP = 1.5 A (Table 1 IPP for this device)	2
Reverse leakage current	IR			1	μA	@ VRWM = 171 V	2
Peak Pulse Power Dissipation on TA=25°C	PPPM			400	W	TA=25°C (Note 1,2,4, Fig1)	1
Peak Forward Surge Current	IFSM			60	A	8.3ms single half sine-wave, JEDEC method (Note 3, Fig 4)	1
ESD Voltage per IEC61000-4-2, Contact	VESD1			30	kV	Contact discharge per IEC61000-4-2	1
ESD Voltage per IEC61000-4-2, Air	VESD2			30	kV	Air discharge per IEC61000-4-2	1
Operating Junction Temperature and Storage Temperature Range	Tj, Tstg	-55		150	°C		1
Typical Thermal Resistance Junction to Ambient	RθJA		120		°C/W	Mounted on 5mm copper pads to each terminal (Note 2)	1
Reverse stand-off voltage	VRWM		171		V		2
Peak pulse current	IPP		1.5		A		2

CAD (KiCad official)

Symbol: P4SMA200A
Footprint: Diode_SMD:D_SMA
3D model: SMA (KiCad packages3D, STEP)
3D model files: p4sma200a-etched.step / p4sma200a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); p4sma200a.step / p4sma200a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Shandong Jingdao Microelectronics datasheet (4 pp, sha256 fadbe7325e3ea043, retrieved 2026-10-13, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# P4SMA200A

**Shandong Jingdao Microelectronics** · ESD And Surge Protection (TVS/ESD) · SMA

P4SMA200A from Shandong Jingdao Microelectronics, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the unipolar P4SMA200A TVS diode, rated for 400 W peak pulse power on the 10/1000 µs waveform, with peak pulse power derated above TA = 25 °C per Fig. 2. |
| 2 | Anode | passive | Anode terminal of the unipolar P4SMA200A TVS diode, rated for 400 W peak pulse power on the 10/1000 µs waveform, with the transient clamped between anode and cathode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMA |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown voltage (min/max) | VBR | 190 |  | 210 | V | IT = 1 mA (Table 1, P4SMA200A unidirectional row) | 2 |
| Maximum clamp voltage | VC |  |  | 274 | V | @ IPP = 1.5 A (Table 1 IPP for this device) | 2 |
| Reverse leakage current | IR |  |  | 1 | μA | @ VRWM = 171 V | 2 |
| Peak Pulse Power Dissipation on TA=25°C | PPPM |  |  | 400 | W | TA=25°C (Note 1,2,4, Fig1) | 1 |
| Peak Forward Surge Current | IFSM |  |  | 60 | A | 8.3ms single half sine-wave, JEDEC method (Note 3, Fig 4) | 1 |
| ESD Voltage per IEC61000-4-2, Contact | VESD1 |  |  | 30 | kV | Contact discharge per IEC61000-4-2 | 1 |
| ESD Voltage per IEC61000-4-2, Air | VESD2 |  |  | 30 | kV | Air discharge per IEC61000-4-2 | 1 |
| Operating Junction Temperature and Storage Temperature Range | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Typical Thermal Resistance Junction to Ambient | RθJA |  | 120 |  | °C/W | Mounted on 5mm copper pads to each terminal (Note 2) | 1 |
| Reverse stand-off voltage | VRWM |  | 171 |  | V |  | 2 |
| Peak pulse current | IPP |  | 1.5 |  | A |  | 2 |

## CAD (KiCad official)

- Symbol: `P4SMA200A`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA (KiCad packages3D, STEP)
- 3D model files: `p4sma200a-etched.step` / `p4sma200a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `p4sma200a.step` / `p4sma200a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590261448988254208) (4 pp, sha256 `fadbe7325e3ea043`, retrieved 2026-10-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/p4sma200a-datasheet.pdf)