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P25Q80H-UXH-IR

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PUYA NOR FLASH, USON-8-EP(2x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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P25Q80H-UXH-IR

PUYA · NOR FLASH · USON-8-EP(2x3)

P25Q80H-UXH-IR from PUYA, in a USON-8-EP(2x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CS# input Chip select input for the device, as named in the pin description table.
2 SO bidirectional Serial data output for 1 x I/O, and serial data input and output (SIO1) for 4 x I/O read mode.
3 WP# bidirectional Write protection, active low, and serial data input and output (SIO2) for 4 x I/O read mode.
4 GND power_in Ground of the device.
5 SI bidirectional Serial data input for 1 x I/O, and serial data input and output (SIO0) for 4 x I/O read mode.
6 SCLK input Serial interface clock input.
7 HOLD# bidirectional Pauses the device without deselecting the device, and serves as serial data input and output (SIO3) for 4 x I/O read mode.
8 VCC power_in Power supply of the device, specified as a single 2.3 V to 3.6 V supply in the overview.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer PUYA
Package USON-8-EP(2x3)
Category Memory
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage temperature -65 150 °C 8
Operation temperature -40 85 °C 8
Maximum operation voltage 4 V 8
Voltage on any pin with respect to ground -0.6 4.1 V with respect to Ground 8
DC output current 5 mA 8
Supply voltage (Read, Erase and Program) VCC 2.3 3.6 V Single supply 4
Output Capacitance COUT 8 pF VOUT=GND 8
Input Capacitance CIN 6 pF VIN=GND 8
Deep power down current IDPD 0.2 1.5 uA CS#=Vcc, all other inputs at 0V or Vcc 9
Standby current ISB 8 uA CS#, HOLD#, WP#=VIH all inputs at CMOS levels 9
Low power read current (03h) ICC1 0.5 1.5 mA f=1MHz; IOUT=0mA 9
Low power read current (03h) ICC1 0.8 2 mA f=33MHz; IOUT=0mA 9
Read current (0Bh) ICC2 1 2.5 mA f=50MHz; IOUT=0mA 9
Read current (0Bh) ICC2 1.8 3.5 mA f=85MHz; IOUT=0mA 9
Program current ICC3 2 5 mA CS#=Vcc 9
Erase current ICC4 2 5 mA CS#=Vcc 9
Input load current ILI 1 uA All inputs at CMOS level 9
Output leakage ILO 1 uA All inputs at CMOS level 9
Output low voltage VOL 0.2 V IOL=100uA 9
Clock Frequency for FAST_READ, RDSFDP, PP, SE, BE32K, BE, CE, DP, RES, WREN, WRDI, RDID, RDSR, WRSR fSCLK 104 MHz 10
Clock Frequency for READ instructions fRSCLK 55 MHz 10
Clock Frequency for 2READ, DREAD instructions fTSCLK 104 MHz 10
Clock Frequency for 4READ, QREAD instructions fQ 104 MHz 10
Clock Frequency for QPP (Quad page program) fQPP 104 MHz 10
Clock High Time tCH 4.5 ns 10
Clock Low Time (fSCLK) tCL 4.5 ns Also printed as 45% x (1/fSCLK) 10
CS# Active Setup Time (relative to SCLK) tSLCH 5 ns 10
CS# Not Active Hold Time (relative to SCLK) tCHSL 5 ns 10
Data In Setup Time tDVCH 2 ns 10
Data In Hold Time tCHDX 3 ns 10
CS# Active Hold Time (relative to SCLK) tCHSH 5 ns 10
CS# Not Active Setup Time (relative to SCLK) tSHCH 5 ns 10
CS# Deselect Time From Read to next Read tSHSL 15 ns From Read to next Read 10
CS# Deselect Time From Write, Erase, Program to Read Status Register tSHSL 30 ns From Write, Erase, Program to Read Status Register 10
Output Disable Time tSHQZ 6 ns 10
Clock Low to Output Valid tCLQV 7 ns Loading 30pF 10
Clock Low to Output Valid tCLQV 6 ns Loading 15pF 10
Output Hold Time tCLQX 0 ns 10
HOLD# to Output Low-Z tHHQX 6 ns 10
HOLD# to Output High-Z tHLQZ 6 ns 10
Write Protect Setup Time tWHSL 20 ns 10
Write Protect Hold Time tSHWL 100 ns 10
CS# High to Deep Power-down Mode tDP 3 us 10
CS# High To Standby Mode Without Electronic Signature Read tRES1 8 us 10
CS# High To Standby Mode With Electronic Signature Read tRES2 8 us 10
Write Status Register Cycle Time tW 8 12 ms 10
Reset recovery time (for erase/program operation except WRSR) tReady 30 us 10
Erase Suspend Latency TESL 30 us 11
Program Suspend Latency TPSL 30 us 11
Latency between Program Resume and next Suspend TPRS 0.3 us 11
Latency between Erase Resume and next Suspend TERS 0.3 us 11
Page program time (up to 256 bytes) tPP 2 3 ms 11
Page erase time tPE 8 20 ms 11
Sector erase time tSE 8 20 ms 11
Block erase time for 32K bytes tBE1 8 20 ms 11
Block erase time for 64K bytes tBE2 8 20 ms 11
Chip erase time tCE 8 20 ms 11

CAD (KiCad official)

  • Symbol: P25Q80H-UXH-IR
  • Footprint: Package_SON:SON-8-1EP_3x2mm_P0.5mm_EP1.4x1.6mm
  • 3D model: USON-8-EP(2x3), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: p25q80h-uxh-ir-etched.step / p25q80h-uxh-ir-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); p25q80h-uxh-ir.step / p25q80h-uxh-ir.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PUYA datasheet (67 pp, sha256 cae5759653aa66c2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF