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P25Q64SH-SSH-IT

Public Made by Adom

by adom

PUYA） NOR FLASH, SOP-8-150mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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P25Q64SH-SSH-IT

PUYA） · NOR FLASH · SOP-8-150mil

P25Q64SH-SSH-IT from PUYA）, in a SOP-8-150mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CS# input Chip select input; the device is selected when this active-low pin is driven low.
2 SO bidirectional Serial data output for 1x I/O, and serial data input and output (SIO1) for 2x and 4x I/O read modes.
3 WP# bidirectional Write protection input, active low, with weak internal pull-up; also serves as SIO2 for 4x I/O read mode. WP# function is only available for Standard/Dual SPI with QE=0.
4 GND power_in Ground of the device.
5 SI bidirectional Serial data input for 1x I/O, and serial data input and output (SIO0) for 2x and 4x I/O read modes.
6 SCLK input Serial interface clock input.
7 HOLD#/RESET# bidirectional Active-low hardware reset, or pauses the device without deselecting it; weak internal pull-up, also serves as SIO3 for 4x I/O read mode. HOLD#/RESET# function is only available for Standard/Dual SPI with QE=0.
8 VCC power_in Power supply of the device, 2.3V to 3.6V.

Key specifications

Parameter Value
Manufacturer PUYA）
Package SOP-8-150mil
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Deep power down current IDPD 0.3 5 uA CS#=VCC, all other inputs at 0V or VCC 9
Standby current ISB 10 18 uA CS#, HOLD#, WP#=VIH all inputs at CMOS levels 9
Low power read current (03h), f=1MHz ICC1 0.3 0.5 mA f=1MHz; IOUT=0mA 9
Low power read current (03h), f=33MHz ICC1 1.5 3 mA f=33MHz; IOUT=0mA 9
All Read current ICC2_DC 0.3 0.5 mA IOUT=0mA 9
Read current, SPI(STR,x1) ICC2_AC 0.04 0.06 mA/MHz IOUT=0mA 9
Read current, DSPI(STR,x2) ICC2_AC 0.052 0.08 mA/MHz IOUT=0mA 9
Read current, QSPI/QPI(STR) ICC2_AC 0.08 0.12 mA/MHz IOUT=0mA 9
Read current, SPI(DTR,x1) ICC2_AC 0.06 0.09 mA/MHz IOUT=0mA 9
Read current, DSPI(DTR,x2) ICC2_AC 0.09 0.13 mA/MHz IOUT=0mA 9
Read current, QSPI/QPI(DTR) ICC2_AC 0.135 0.19 mA/MHz IOUT=0mA 9
Program current ICC3 3 5 mA CS#=VCC 9
Erase current ICC4 3 5 mA CS#=VCC 9
Input load current ILI 2 uA All inputs at CMOS level 9
Output leakage ILO 2 uA All inputs at CMOS level 9
Input low voltage VIL 0.3 Vcc 9
Input high voltage VIH 0.7 Vcc 9
Output low voltage VOL 0.2 V IOL=100uA 9
Clock Frequency for all instructions except special marking fSCLK 120 MHz 10
Clock Frequency for READ instructions fRSCLK 55 MHz READ instructions 10
Clock Frequency for 2READ, DREAD instructions fTSCLK 120 MHz 2READ, DREAD instructions 10
Clock Frequency for 4READ, QREAD, QPI instructions fQ 120 MHz 4READ, QREAD, QPI 0Bh, QPI EBh, QPI 0Ch instructions 10
Clock Frequency for DTR 1IO/2IO instructions fD 85 MHz DTR 1IO/2IO instructions 10
Clock Frequency for DTR 4IO instructions fQD 70 MHz DTR 4IO instructions 10
Clock Frequency for QPP (Quad page program) fQPP 120 MHz Quad page program 10
Program Suspend Latency tPSL 20 us 11
Erase Suspend Latency tESL 20 us 11
Latency between Program Resume and next Suspend tPRS 20 us 11
Latency between Erase Resume and next Suspend tERS 20 us 11
Page program time (up to 256/512/1024 bytes) tPP 1.6 2.5 ms up to 256/512/1024 bytes 11
Page erase time tPE 16 25 ms 11
Sector erase time tSE 16 25 ms 11
Block erase time for 32K bytes tBE1 16 25 ms 11
Block erase time for 64K bytes tBE2 16 25 ms 11
Chip erase time tCE 256 400 ms 11
Output Capacitance COUT 8 pF VOUT=GND 8
Input Capacitance CIN 6 pF VIN=GND 8
Storage Temperature -65 150 °C 8
Operation Temperature -40 85 °C 8
Maximum Operation Voltage 4 V 8
Voltage on Any Pin with respect to Ground -0.6 V Printed maximum is VCC+0.5V (not a number); max left null 8
DC Output Current 5 mA 8
Supply voltage (Single supply) Vcc 2.3 3.6 V Single supply for Read, Erase and Program (Overview, datasheet states 2.3V to 3.60V) 4
Clock High Time tCH 3.7 ns 10
Clock Low Time tCL 3.7 ns 45% x (1/fSCLK) 10
CS# Deselect Time from Read to next Read tSHSL 20 ns 10
CS# Deselect Time from Write, Erase, Program to Read Status Register tSHSL 30 ns 10
Data in Setup Time tDVCH 2 ns 10
Data in Hold Time tCHDX 3 ns 10
Output Disable Time tSHQZ 6 ns 10
Clock Low to Output Valid tCLQV 1.5 6 ns Loading 30pF 10
Clock Low to Output Valid tCLQV 1.5 5 ns Loading 15pF 10
Output Hold Time tCLQX 0.8 ns 10
CS# High to Deep Power-down Mode tDP 3 us 10
CS# High to Standby Mode Without Electronic Signature Read tRES1 8 us 10
Write Status Register Cycle Time tW 8 12 ms 10
Reset recovery time (for erase/program operation except WRSR) tReady 30 us erase/program operation except WRSR 10
Clear Page Buffer time tBC 0.3 us 10
Clock Low Time for READ instructions setup-sequence: CS# Active Setup Time (relative to SCLK) tSLCH 5 ns 10
CS# Not Active Hold Time (relative to SCLK) tCHSL 5 ns 10

CAD (KiCad official)

  • Symbol: P25Q64SH-SSH-IT
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8-150mil (KiCad packages3D, STEP)
  • 3D model files: p25q64sh-ssh-it-etched.step / p25q64sh-ssh-it-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); p25q64sh-ssh-it.step / p25q64sh-ssh-it.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PUYA） datasheet (104 pp, sha256 13fbd52e680d2010, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF