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P25D22H-SSH-IT

Public Made by Adom

by adom

PUYA） NOR FLASH, SOP-8-150mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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P25D22H-SSH-IT

PUYA） · NOR FLASH · SOP-8-150mil

P25D22H-SSH-IT from PUYA）, in a SOP-8-150mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CS# input Chip select input for the serial interface, listed in the pin descriptions as 'Chip select' with no further limits stated.
2 SO bidirectional Serial data output for 1 x I/O (SIO1), and serial data input and output for 2 x I/O read mode.
3 WP# input Write protection, active low; it provides hardware controlled locking of protected sectors.
4 GND power_in Ground of the device.
5 SI bidirectional Serial data input for 1 x I/O (SIO0), and serial data input and output for 2 x I/O read mode.
6 SCLK input Serial interface clock input, with SPI Mode 0 and Mode 3 supported.
7 NC unconnected Not connected.
8 VCC power_in Power supply of the device, specified at 2.3 V to 3.6 V.

Key specifications

Parameter Value
Manufacturer PUYA）
Package SOP-8-150mil
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature -65 150 °C 7
Operation Temperature -25 85 °C 7
Maximum Operation Voltage 4 V 7
Voltage on Any Pin with respect to Ground -0.6 4.1 V 7
DC Output Current 5 mA 7
Output Capacitance COUT 8 pF VOUT=GND 7
Input Capacitance CIN 6 pF VIN=GND 7
Deep power down current IDPD 0.2 2 uA CS#=Vcc, all other inputs at 0V or Vcc 8
Standby current ISB 12 20 uA CS#, WP#=VIH all inputs at CMOS levels 8
Low power read current (03h) ICC1 0.5 1 mA f=1MHz; IOUT=0mA 8
Low power read current (03h) ICC1 0.8 1.5 mA f=33MHz; IOUT=0mA 8
Read current (0Bh) ICC2 1 2 mA f=50MHz; IOUT=0mA 8
Read current (0Bh) ICC2 1.5 2.5 mA f=85MHz; IOUT=0mA 8
Program current ICC3 2 3 mA CS#=Vcc 8
Erase current ICC4 2 3 mA CS#=Vcc 8
Input load current ILI 1 uA All inputs at CMOS level 8
Output leakage ILO 1 uA All inputs at CMOS level 8
Output low voltage VOL 0.2 V IOL=100uA 8
Clock Frequency for FAST_READ, PP, SE, BE32K, BE, CE, DP, RES, WREN, WRDI, RDID, RDSR, RDCR, WRSR, WRCR, RUID fSCLK 85 MHz FAST_READ, PP, SE, BE32K, BE, CE, DP, RES, WREN, WRDI, RDID, RDSR, RDCR, WRSR, WRCR, RUID 9
Clock Frequency for READ instruction fRSCLK 40 MHz READ instruction 9
Clock Frequency for DREAD instructions and 2READ instructions fTSCLK 85 MHz DREAD instructions and 2READ instructions with 8 dummy CLK 9
Clock Frequency for 2READ instructions fQ 70 MHz 2READ instructions with 4 dummy CLK 9
Clock High Time for READ instruction tCH 11 ns READ instruction 9
Clock High Time tCH 5 ns 9
Clock Low Time for READ instruction tCL 11 ns READ instruction 9
Clock Low Time (fSCLK) tCL 5 ns fSCLK 9
CS# Active Setup Time (relative to SCLK) tSLCH 5 ns 9
CS# Not Active Hold Time (relative to SCLK) tCHSL 5 ns 9
Data In Setup Time tDVCH 2 ns 9
Data In Hold Time tCHDX 3 ns 9
CS# Active Hold Time (relative to SCLK) tCHSH 5 ns 9
CS# Not Active Setup Time (relative to SCLK) tSHCH 5 ns 9
CS# Deselect Time From Read to next Read tSHSL 20 ns From Read to next Read 9
CS# Deselect Time From Write, Erase, Program to Read Status Register tSHSL 30 ns From Write, Erase, Program to Read Status Register 9
Output Disable Time tSHQZ 6 ns 9
Clock Low to Output Valid Loading 30pF tCLQV 7 ns Loading 30pF 9
Clock Low to Output Valid Loading 15pF tCLQV 6 ns Loading 15pF 9
Output Hold Time tCLQX 0 ns 9
Write Protect Setup Time tWHSL 20 ns 9
Write Protect Hold Time tSHWL 100 ns 9
CS# High to Deep Power-down Mode tDP 3 us 9
CS# High To Standby Mode Without Electronic Signature Read tRES1 8 us 9
CS# High To Standby Mode With Electronic Signature Read tRES2 8 us 9
Write Status Register Cycle Time tW 8 12 ms 9
Reset recovery time (for erase/program operation except WRSR) tReady 30 us for erase/program operation except WRSR 9
Reset recovery time (for WRSR operation) tReady 8 12 ms for WRSR operation 9
Page program time (up to 256 bytes) tPP 2 3 ms 10
Page erase time tPE 12 20 ms 10
Sector erase time tSE 12 20 ms 10
Block erase time for 32K bytes tBE1 12 20 ms 10
Block erase time for 64K bytes tBE2 12 20 ms 10
Chip erase time tCE 12 20 ms 10
Supply voltage (Read, Erase and Program) Vcc 2.3 3.6 V Single supply, read, erase and program 3
Operating temperature range (Industrial) -25 85 °C 3

CAD (KiCad official)

  • Symbol: P25D22H-SSH-IT
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8-150mil (KiCad packages3D, STEP)
  • 3D model files: p25d22h-ssh-it-etched.step / p25d22h-ssh-it-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); p25d22h-ssh-it.step / p25d22h-ssh-it.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PUYA） datasheet (47 pp, sha256 975b1ce571dc3593, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF