component
P1403EK
Public Made by Adomby adom
Cmos MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownP1403EK
Cmos · MOSFETs · DFN-8(5x6)
P1403EK from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, with continuous source current rated up to -52A. |
| 2 | S | passive | Source of the P-channel MOSFET, with continuous source current rated up to -52A. |
| 3 | S | passive | Source of the P-channel MOSFET, with continuous source current rated up to -52A. |
| 4 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated ±20V and threshold of -1V to -2.5V. |
| 5 | D | passive | Drain of the P-channel MOSFET, with drain-source voltage rated -30V and continuous drain current -52A at TC=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET, with drain-source voltage rated -30V and continuous drain current -52A at TC=25℃. |
| 7 | D | passive | Drain of the P-channel MOSFET, with drain-source voltage rated -30V and continuous drain current -52A at TC=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET, with drain-source voltage rated -30V and continuous drain current -52A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -52 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -33 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -150 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 338 | mJ | VDD=50V, VGS=10V, L=0.1mH, IAS=42A | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 62.5 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 10 | mΩ | VGS=-10V, ID=-25A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | mΩ | VGS=-4.5V, ID=-20A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -100 | uA | VDS=-24V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -52 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -150 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IF=-30A | 2 | ||
| Forward Transconductance | gfs | 21 | S | VDS=-5V, ID=-5A | 2 | ||
| Gate Resistance | Rg | 2 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 40 | nC | VDS=-15V, VGS=-5V, ID=-12A | 2 | ||
| Gate-Source Charge | Qgs | 10 | nC | VDS=-15V, VGS=-5V, ID=-12A | 2 | ||
| Gate-Drain Charge | Qgd | 14 | nC | VDS=-15V, VGS=-5V, ID=-12A | 2 | ||
| Turn-On Delay Time | Td(on) | 18 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-2A | 2 | ||
| Rise Time | Tr | 30 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-2A | 2 | ||
| Turn-Off Delay Time | Td(off) | 50 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-2A | 2 | ||
| Fall Time | Tf | 95 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-2A | 2 | ||
| Input Capacitance | Ciss | 3500 | pF | VDS=-25V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 300 | pF | VDS=-25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 270 | pF | VDS=-25V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
P1403EK - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
p1403ek-etched.step/p1403ek-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);p1403ek.step/p1403ek.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (4 pp, sha256
9e779a639503a0d5, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).