component

P1006BD

Public Made by Adom

by adom

U-NIKC MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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P1006BD

U-NIKC · MOSFETs · TO-252

P1006BD from U-NIKC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold 1.3 to 2.3 V (typ 1.8 V) at VDS = VGS, ID = 250 µA.
2 D passive Drain (center lead, common with the metal tab); VDS rated 60 V, continuous drain current 66 A at TC = 25 °C (package limited to 30 A).
3 S passive Source; body diode continuous current 66 A with forward voltage up to 1.3 V at IF = 20 A.

Key specifications

Parameter Value
Manufacturer U-NIKC
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 66 A TC = 25 °C; package limitation current is 30A 1
Continuous Drain Current ID 42 A TC = 100 °C 1
Pulsed Drain Current IDM 150 A Pulse width limited by maximum junction temperature 1
Avalanche Current IAS 38.5 A L =0.1mH 1
Avalanche Energy EAS 74 mJ L =0.1mH 1
Power Dissipation PD 96 W TC = 25 °C 1
Power Dissipation PD 38 W TC = 100 °C 1
Junction & Storage Temperature Range Tj, Tstg -55 150 °C 1
Junction-to-Case Thermal Resistance RqJC 1.3 °C / W 1
Junction-to-Ambient Thermal Resistance RqJA 62.5 °C / W 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250mA 2
Gate Threshold Voltage VGS(th) 1.3 1.8 2.3 V VDS = VGS, ID = 250mA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 mA VDS = 48V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 10 mA VDS = 40V, VGS = 0V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(ON) 6.8 10 mΩ VGS = 10V, ID = 20A 2
Drain-Source On-State Resistance RDS(ON) 8.1 13 mΩ VGS = 4.5V, ID = 20A 2
Forward Transconductance gfs 60 S VDS =10V, ID = 20A 2
Diode Continuous Current IS 66 A 2
Diode Forward Voltage VSD 1.3 V IF = 20A, VGS = 0V 2
Input Capacitance Ciss 1920 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Output Capacitance Coss 215 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Reverse Transfer Capacitance Crss 140 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Gate Resistance Rg 0.7 Ω VGS = 0V, VDS = 0V, f = 1MHz 2
Total Gate Charge (VGS=10V) Qg 42 nC VDS = 30V, ID = 20A 2
Total Gate Charge (VGS=4.5V) Qg 23 nC VDS = 30V, ID = 20A 2
Gate-Source Charge Qgs 6 nC VDS = 30V, ID = 20A 2
Gate-Drain Charge Qgd 12 nC VDS = 30V, ID = 20A 2
Turn-On Delay Time td(on) 29 nS VDS = 30V, ID @ 20A, VGS = 10V, RGEN = 6Ω 2
Rise Time tr 31 nS VDS = 30V, ID @ 20A, VGS = 10V, RGEN = 6Ω 2
Turn-Off Delay Time td(off) 51 nS VDS = 30V, ID @ 20A, VGS = 10V, RGEN = 6Ω 2
Fall Time tf 31 nS VDS = 30V, ID @ 20A, VGS = 10V, RGEN = 6Ω 2
Diode Reverse Recovery Time trr 26 nS IF = 20A, dl/dt = 100A / mS 2
Diode Reverse Recovery Charge Qrr 19 uC IF = 20A, dl/dt = 100A / mS 2

CAD (KiCad official)

  • Symbol: P1006BD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: p1006bd-etched.step / p1006bd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); p1006bd.step / p1006bd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: U-NIKC datasheet (8 pp, sha256 24ee223bb6535d5e, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF