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P0903BDG-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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P0903BDG-VB

VBsemi Elec · MOSFETs · TO-252

P0903BDG-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (absolute maximum).
2 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V with a continuous drain current of 60 A at TC = 25 °C (limited to 90 A by package per note e).
3 S passive Source terminal of the N-channel MOSFET; continuous source-drain diode current is rated at 90 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ = 55 °C) IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 90 A VDS 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.005 Ω VGS = 10 V, ID = 8.8 A 2
Drain-Source On-State Resistance RDS(on) 0.006 Ω VGS = 4.5 V, ID = 37 A 2
Forward Transconductance gfs 160 S VDS = 15 V, ID = 38.8 A 2
Output Capacitance Coss 525 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 270 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge (VGS = 10 V) Qg 61 107 nC VDS = 15 V, VGS = 10 V, ID = 38.8 A 2
Total Gate Charge (VGS = 4.5 V) Qg 31.5 50 nC VDS = 15 V, VGS = 4.5 V, ID = 28.8 A 2
Gate-Source Charge Qgs 10 nC 2
Gate-Drain Charge Qgd 6 nC 2
Gate Resistance Rg 1.4 2.1 Ω f = 1 MHz 2
Turn-On Delay Time (VGS = 10 V) td(on) 18 27 ns VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time (VGS = 10 V) tr 11 17 ns VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGS = 10 V) td(off) 70 105 ns VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGS = 10 V) tf 10 15 ns VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time (VGS = 4.5 V) td(on) 55 83 ns VDD = 15 V, RL = 0.67 Ω, ID 22.5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time (VGS = 4.5 V) tr 180 270 ns VDD = 15 V, RL = 0.67 Ω, ID 22.5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGS = 4.5 V) td(off) 55 83 ns VDD = 15 V, RL = 0.67 Ω, ID 22.5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time (VGS = 4.5 V) tf 12 18 ns VDD = 15 V, RL = 0.67 Ω, ID 22.5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 120 A TC = 25 °C 2
Pulse Diode Forward Current ISM 120 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 22 A 2
Body Diode Reverse Recovery Time trr 52 78 ns IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 70.2 105 nC 2
Reverse Recovery Fall Time ta 27 ns 2
Reverse Recovery Rise Time tb 25 ns 2
Temperature Coefficient of VDS VDS/TJ 35 mV/°C ID = 250 µA 2
Temperature Coefficient of VGS(th) VGS(th)/TJ -7.5 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 60 A TC = 70 °C 1
Continuous Drain Current ID 25.8 A TA = 25 °C 1
Continuous Drain Current ID 22 A TA = 70 °C 1
Pulsed Drain Current IDM 250 A 1
Avalanche Current IAS 9 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 94.8 mJ 1
Continuous Source-Drain Diode Current IS 90 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 3.13 A TA = 25 °C 1
Maximum Power Dissipation PD 205 W TC = 25 °C 1
Maximum Power Dissipation PD 135 W TC = 70 °C 1
Maximum Power Dissipation PD 3.75 W TA = 25 °C 1
Maximum Power Dissipation PD 2.63 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient (t ≤ 10 sec) RthJA 32 40 °C/W t 10 sec 1
Maximum Junction-to-Ambient (steady state) RthJA 90 °C/W steady state, per note d 1
Maximum Junction-to-Case (steady state) RthJC 0.5 0.6 °C/W steady state 1

CAD (KiCad official)

  • Symbol: P0903BDG-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: p0903bdg-vb-etched.step / p0903bdg-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); p0903bdg-vb.step / p0903bdg-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 c7bb68810c1ea329, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF