component
OSP8N60C
Public Made by Adomby adom
OSEN MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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OSP8N60C
OSEN · MOSFETs · TO-220AB
OSP8N60C from OSEN, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with a gate-source voltage rating of ±30 V continuous and a threshold voltage of 2.0 to 4.0 V at VDS=VGS, ID=250µA. |
| 2 | Drain | passive | Drain terminal rated for 600 V drain-source voltage, 8 A continuous drain current and 32 A pulsed drain current. |
| 3 | Source | passive | Source terminal, which carries the 8 A continuous body-diode forward current (IS) and the full 8 A drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V | Tc=25°C | 2 | ||
| Gate-Source Voltage-Continuous | VGS | -30 | 30 | V | Tc=25°C | 2 | |
| Drain Current-Continuous | ID | 8 | A | Tc=25°C | 2 | ||
| Drain Current-Single Plused | IDM | 32 | A | Tc=25°C | 2 | ||
| Power Dissipation | PD | 145 | W | Tc=25°C | 2 | ||
| Max. Operating junction temperature | Tj | 150 | ℃ | Tc=25°C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | ID=250µA,VGS=0V,TJ=25°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS,ID=250μA | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V,VDS=0 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=600V,VGS=0 | 2 | ||
| Turn-On Delay Time | Td(on) | 16.5 | 45 | ns | VDS=300V,ID=8A,RG=25Ω(Note 2) | 3 | |
| Rise Time | Tr | 60.5 | 130 | ns | VDS=300V,ID=8A,RG=25Ω(Note 2) | 3 | |
| Turn-Off Delay Time | Td(off) | 81 | 170 | ns | VDS=300V,ID=8A,RG=25Ω(Note 2) | 3 | |
| Fall Time | Tf | 64.5 | 140 | ns | VDS=300V,ID=8A,RG=25Ω(Note 2) | 3 | |
| Total Gate Charge | Qg | 28 | 36 | nC | VDS=480V,VGS=10V,ID=8A(Note 2) | 3 | |
| Input Capacitance | Ciss | 965 | 1255 | pF | VDS=25V,VGS=0,f=1MHz | 3 | |
| Output Capacitance | Coss | 105 | 135 | pF | VDS=25V,VGS=0,f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 12 | 16 | pF | VDS=25V,VGS=0,f=1MHz | 3 | |
| Continuous Drain-Source Diode Forward Current | IS | 8 | A | 3 | |||
| Diode Forward On-Voltage | VSD | 1.4 | V | IS=8A,VGS=0 | 3 | ||
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.86 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
OSP8N60C - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
osp8n60c-etched.step/osp8n60c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);osp8n60c.step/osp8n60c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: OSEN datasheet (3 pp, sha256
99e6437116e0c1fc, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# OSP8N60C
**OSEN** · MOSFETs · TO-220AB
OSP8N60C from OSEN, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with a gate-source voltage rating of ±30 V continuous and a threshold voltage of 2.0 to 4.0 V at VDS=VGS, ID=250µA. |
| 2 | Drain | passive | Drain terminal rated for 600 V drain-source voltage, 8 A continuous drain current and 32 A pulsed drain current. |
| 3 | Source | passive | Source terminal, which carries the 8 A continuous body-diode forward current (IS) and the full 8 A drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 600 | V | Tc=25°C | 2 |
| Gate-Source Voltage-Continuous | VGS | -30 | | 30 | V | Tc=25°C | 2 |
| Drain Current-Continuous | ID | | | 8 | A | Tc=25°C | 2 |
| Drain Current-Single Plused | IDM | | | 32 | A | Tc=25°C | 2 |
| Power Dissipation | PD | | | 145 | W | Tc=25°C | 2 |
| Max. Operating junction temperature | Tj | | | 150 | ℃ | Tc=25°C | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 600 | | | V | ID=250µA,VGS=0V,TJ=25°C | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS=VGS,ID=250μA | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±30V,VDS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=600V,VGS=0 | 2 |
| Turn-On Delay Time | Td(on) | | 16.5 | 45 | ns | VDS=300V,ID=8A,RG=25Ω(Note 2) | 3 |
| Rise Time | Tr | | 60.5 | 130 | ns | VDS=300V,ID=8A,RG=25Ω(Note 2) | 3 |
| Turn-Off Delay Time | Td(off) | | 81 | 170 | ns | VDS=300V,ID=8A,RG=25Ω(Note 2) | 3 |
| Fall Time | Tf | | 64.5 | 140 | ns | VDS=300V,ID=8A,RG=25Ω(Note 2) | 3 |
| Total Gate Charge | Qg | | 28 | 36 | nC | VDS=480V,VGS=10V,ID=8A(Note 2) | 3 |
| Input Capacitance | Ciss | | 965 | 1255 | pF | VDS=25V,VGS=0,f=1MHz | 3 |
| Output Capacitance | Coss | | 105 | 135 | pF | VDS=25V,VGS=0,f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 12 | 16 | pF | VDS=25V,VGS=0,f=1MHz | 3 |
| Continuous Drain-Source Diode Forward Current | IS | | | 8 | A | | 3 |
| Diode Forward On-Voltage | VSD | | | 1.4 | V | IS=8A,VGS=0 | 3 |
| Thermal Resistance, Junction to Case | Rth(j-c) | | | 0.86 | ℃/W | | 3 |
## CAD (KiCad official)
- Symbol: `OSP8N60C`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `osp8n60c-etched.step` / `osp8n60c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `osp8n60c.step` / `osp8n60c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [OSEN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590920583351640064) (3 pp, sha256 `99e6437116e0c1fc`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/osp8n60c-datasheet.pdf)