component
OSP80N03T
Public Made by Adomby adom
OSEN MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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OSP80N03T
OSEN · MOSFETs · TO-220AB
OSP80N03T from OSEN, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V continuous with a threshold of 1.0 V min to 2.5 V max at ID=250µA. |
| 2 | D | passive | Drain terminal (also the tab); drain-source voltage is rated 30 V with 80 A continuous drain current. |
| 3 | S | passive | Source terminal; continuous drain-source diode forward current is 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | 4.3 | 5.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0 | 2 | ||
| Forward Transconductance | gfs | 20 | S | VDS=10V, ID=20A | 2 | ||
| Continuous Drain-Source Diode Forward Current | IS | 80 | A | 3 | |||
| Diode Forward On-Voltage | VSD | 0.7 | V | IS=1A, VGS=0 | 3 | ||
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.13 | ℃/W | 3 | |||
| Drain-Source Voltage | VDSS | 30 | V | Tc=25°C | 2 | ||
| Gate-Source Voltage-Continuous | VGS | -20 | 20 | V | Tc=25°C | 2 | |
| Drain Current-Continuous | ID | 80 | A | Tc=25°C | 2 | ||
| Drain Current-Single Pulsed | IDM | 320 | A | Tc=25°C | 2 | ||
| Power Dissipation | PD | 110 | W | Tc=25°C | 2 | ||
| Max. Operating junction temperature | Tj | 150 | ℃ | 2 | |||
| Turn-On Delay Time | Td(on) | 15 | ns | VGS=10V, VDS=30V, ID=30A, RG=1Ω | 3 | ||
| Rise Time | Tr | 13 | ns | VGS=10V, VDS=30V, ID=30A, RG=1Ω | 3 | ||
| Turn-Off Delay Time | Td(off) | 35 | ns | VGS=10V, VDS=30V, ID=30A, RG=1Ω | 3 | ||
| Fall Time | Tf | 10 | ns | VGS=10V, VDS=30V, ID=30A, RG=1Ω | 3 | ||
| Total Gate Charge | Qg | 75 | nC | VDS=30, VGS=4.5V, ID=40A | 3 | ||
| Gate-Source Charge | Qgs | 15 | nC | VDS=30, VGS=4.5V, ID=40A | 3 | ||
| Gate-Drain Charge | Qgd | 25 | nC | VDS=30, VGS=4.5V, ID=40A | 3 | ||
| Input Capacitance | Ciss | 2250 | pF | VDS=20V, VGS=0, f=1MHz | 3 | ||
| Output Capacitance | Coss | 365 | pF | VDS=20V, VGS=0, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 55 | pF | VDS=20V, VGS=0, f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
OSP80N03T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
osp80n03t-etched.step/osp80n03t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);osp80n03t.step/osp80n03t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: OSEN datasheet (3 pp, sha256
24a52c5529fffc3b, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# OSP80N03T
**OSEN** · MOSFETs · TO-220AB
OSP80N03T from OSEN, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V continuous with a threshold of 1.0 V min to 2.5 V max at ID=250µA. |
| 2 | D | passive | Drain terminal (also the tab); drain-source voltage is rated 30 V with 80 A continuous drain current. |
| 3 | S | passive | Source terminal; continuous drain-source diode forward current is 80 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID=250µA, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 4.3 | 5.5 | mΩ | VGS=10V, ID=20A | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±25V, VDS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V, VGS=0 | 2 |
| Forward Transconductance | gfs | 20 | | | S | VDS=10V, ID=20A | 2 |
| Continuous Drain-Source Diode Forward Current | IS | | | 80 | A | | 3 |
| Diode Forward On-Voltage | VSD | | | 0.7 | V | IS=1A, VGS=0 | 3 |
| Thermal Resistance, Junction to Case | Rth(j-c) | | | 1.13 | ℃/W | | 3 |
| Drain-Source Voltage | VDSS | | | 30 | V | Tc=25°C | 2 |
| Gate-Source Voltage-Continuous | VGS | -20 | | 20 | V | Tc=25°C | 2 |
| Drain Current-Continuous | ID | | | 80 | A | Tc=25°C | 2 |
| Drain Current-Single Pulsed | IDM | | | 320 | A | Tc=25°C | 2 |
| Power Dissipation | PD | | | 110 | W | Tc=25°C | 2 |
| Max. Operating junction temperature | Tj | | | 150 | ℃ | | 2 |
| Turn-On Delay Time | Td(on) | | 15 | | ns | VGS=10V, VDS=30V, ID=30A, RG=1Ω | 3 |
| Rise Time | Tr | | 13 | | ns | VGS=10V, VDS=30V, ID=30A, RG=1Ω | 3 |
| Turn-Off Delay Time | Td(off) | | 35 | | ns | VGS=10V, VDS=30V, ID=30A, RG=1Ω | 3 |
| Fall Time | Tf | | 10 | | ns | VGS=10V, VDS=30V, ID=30A, RG=1Ω | 3 |
| Total Gate Charge | Qg | | 75 | | nC | VDS=30, VGS=4.5V, ID=40A | 3 |
| Gate-Source Charge | Qgs | | 15 | | nC | VDS=30, VGS=4.5V, ID=40A | 3 |
| Gate-Drain Charge | Qgd | | 25 | | nC | VDS=30, VGS=4.5V, ID=40A | 3 |
| Input Capacitance | Ciss | | 2250 | | pF | VDS=20V, VGS=0, f=1MHz | 3 |
| Output Capacitance | Coss | | 365 | | pF | VDS=20V, VGS=0, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 55 | | pF | VDS=20V, VGS=0, f=1MHz | 3 |
## CAD (KiCad official)
- Symbol: `OSP80N03T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `osp80n03t-etched.step` / `osp80n03t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `osp80n03t.step` / `osp80n03t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [OSEN datasheet](docs/osp80n03t-datasheet.pdf) (3 pp, sha256 `24a52c5529fffc3b`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/osp80n03t-datasheet.pdf)