component

OSG80R300FF

Public Made by Adom

by adom

ORIENTAL SEMI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsosg80r300fffactory-2.0.0extractor-text

Verified OSG80R300FF

by Ray · last 6 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: OSG80R300FF · TO-220F · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220F-3_Vertical
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-8c6p7_lg/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ osg80r300ff.kicad_sym✓ osg80r300ff.kicad_mod✓ osg80r300ff.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
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← Commit history

osg80r300ff: factory component page (tier=lcsc)

Ray ·0ef527db4f ·3h ago ·parent acf77b5
1 file changed +318−26
page.json+318−26
page.json+318−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "osg80r300ff",+  "title": "OSG80R300FF",+  "brief": "ORIENTAL SEMI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "ORIENTAL SEMI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "osg80r300ff.kicad_sym",-    "osg80r300ff.kicad_mod",-    "osg80r300ff.glb",-    "osg80r300ff.step",-    "osg80r300ff.lbr",-    "docs/hero.png",-    "docs/osg80r300ff-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "osg80r300ff-hero.glb",-    "osg80r300ff-hero.overlay.json"-  ],   "component": {     "mpn": "OSG80R300FF",     "manufacturer": "ORIENTAL SEMI",@@ -139,10 +122,319 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "ORIENTAL SEMI",+      "Package": "TO-220F",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "7c94895894dba016d9d7029615c33922c4706ecd4e9c3932276b7fa4fdfe426e",+      "rows": [+        {+          "name": "Drain-source breakdown voltage",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 800,+          "typ": null,+          "max": null,+          "conditions": "VGS=0 V, ID=250 μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source breakdown voltage (Tj=150 °C)",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 850,+          "typ": null,+          "max": null,+          "conditions": "VGS=0 V, ID=250 μA, Tj=150 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate threshold voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 2.9,+          "max": 3.9,+          "conditions": "VDS=VGS, ID=250 μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 0.24,+          "max": 0.3,+          "conditions": "VGS=10 V, ID=7.5 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance (Tj=150 °C)",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": null,+          "max": 0.64,+          "conditions": "VGS=10 V, ID=7.5 A, Tj=150 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-source leakage current (positive)",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VGS=30 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-source leakage current (negative)",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": null,+          "conditions": "VGS=-30 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source leakage current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 5,+          "conditions": "VDS=800 V, VGS=0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source voltage",+          "symbol": "VDS",+          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     "max": 45,+          "conditions": "TC=25 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Power dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 34,+          "conditions": "TC=25 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Single pulsed avalanche energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 410,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "MOSFET dv/dt ruggedness",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "VDS=0…480 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"osg80r300ff.kicad_mod",+    "osg80r300ff.glb",+    "osg80r300ff.step",+    "osg80r300ff.lbr",+    "docs/hero.png",+    "docs/osg80r300ff-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "osg80r300ff-hero.glb",+    "osg80r300ff-hero.overlay.json"+  ]+}