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OSG65R380DEF

ORIENTAL SEMI · MOSFETs · TO-252

OSG65R380DEF from ORIENTAL SEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage rated ±30 V absolute maximum, with VGS(th) of 2.9 to 3.9 V at ID=250 μA.
2	D	passive	Drain; drain-source voltage rated 650 V, continuous drain current 11 A at TC=25 °C and 33 A pulsed.
3	S	passive	Source; connects to the body diode anode, with continuous diode forward current of 15 A at TC=25 °C.

Key specifications

Parameter	Value
Manufacturer	ORIENTAL SEMI
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source voltage	VDS			650	V		2
Gate-source voltage	VGS	-30		30	V		2
Continuous drain current	ID			11	A	TC=25 °C	2
Continuous drain current	ID			7	A	TC=100 °C	2
Pulsed drain current	ID, pulse			33	A	TC=25 °C	2
Continuous diode forward current	IS			15	A	TC=25 °C	2
Diode pulsed current	IS, pulse			45	A	TC=25 °C	2
Power dissipation	PD			83	W	TC=25 °C	2
Single pulsed avalanche energy	EAS			200	mJ	Footnote 5: VDD=100 V, VGS=10 V, L=10 mH, starting Tj=25 °C	2
MOSFET dv/dt ruggedness	dv/dt			50	V/ns	VDS=0…480 V	2
Reverse diode dv/dt	dv/dt			15	V/ns	VDS=0…480 V, ISD≤ID	2
Operation and storage temperature	Tstg, Tj	-55		150	°C		2
Thermal resistance, junction-case	RθJC			1.5	°C/W		2
Thermal resistance, junction-ambient	RθJA			62	°C/W	Footnote 4: device mounted on 1 in² FR-4 board with 2oz copper, still air, Ta=25 °C	2
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=250 μA	2
Drain-source breakdown voltage	BVDSS		700	760	V	VGS=0 V, ID=250 μA, Tj=150 °C	2
Gate threshold voltage	VGS(th)	2.9	3.9		V	VDS=VGS, ID=250 μA	2
Drain-source on-state resistance	RDS(ON)		0.3	0.38	Ω	VGS=10 V, ID=5.5 A	2
Gate-source leakage current	IGSS			100	nA	VGS=30 V	2
Gate-source leakage current	IGSS	-100			nA	VGS=-30 V	2

CAD (KiCad official)

Symbol: OSG65R380DEF
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: osg65r380def-etched.step / osg65r380def-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); osg65r380def.step / osg65r380def.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: ORIENTAL SEMI datasheet (9 pp, sha256 a21bdc8fe91c1480, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF