component
OSD65R380
Public Made by Adomby adom
OSEN MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
OSD65R380
OSEN · MOSFETs · TO-252
OSD65R380 from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±30 V with threshold of 2.5 V to 4.5 V and gate leakage up to ±100 nA. |
| 2 | Drain | passive | Drain terminal; drain-source voltage rated 650 V with 11 A continuous and 33 A pulsed drain current. |
| 3 | Source | passive | Source terminal; carries the 11 A continuous current return and the body diode forward current of 11 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | Tc=25°C | 2 | ||
| Gate-Source Voltage-Continuous | VGS | -30 | 30 | V | Tc=25°C | 2 | |
| Drain Current-Continuous | ID | 11 | A | Tc=25°C | 2 | ||
| Drain Current-Single Pulsed | IDM | 33 | A | Tc=25°C | 2 | ||
| Power Dissipation | PD | 35 | W | Tc=25°C | 2 | ||
| Max. Operating junction temperature | Tj | 150 | ℃ | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS=VGS, ID=250μA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 0.32 | 0.38 | Ω | VGS=10V, ID=4A | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=600V, VGS=0 | 2 | ||
| Continuous Drain-Source Diode Forward Current | IS | 11 | A | 3 | |||
| Diode Forward On-Voltage | VSD | 0.9 | 1.2 | V | IS=11A, VGS=0 | 3 | |
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.57 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
OSD65R380 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
osd65r380-etched.step/osd65r380-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);osd65r380.step/osd65r380.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: OSEN datasheet (3 pp, sha256
99447924dac50166, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# OSD65R380
**OSEN** · MOSFETs · TO-252
OSD65R380 from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±30 V with threshold of 2.5 V to 4.5 V and gate leakage up to ±100 nA. |
| 2 | Drain | passive | Drain terminal; drain-source voltage rated 650 V with 11 A continuous and 33 A pulsed drain current. |
| 3 | Source | passive | Source terminal; carries the 11 A continuous current return and the body diode forward current of 11 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | Tc=25°C | 2 |
| Gate-Source Voltage-Continuous | VGS | -30 | | 30 | V | Tc=25°C | 2 |
| Drain Current-Continuous | ID | | | 11 | A | Tc=25°C | 2 |
| Drain Current-Single Pulsed | IDM | | | 33 | A | Tc=25°C | 2 |
| Power Dissipation | PD | | | 35 | W | Tc=25°C | 2 |
| Max. Operating junction temperature | Tj | | | 150 | ℃ | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | ID=250µA, VGS=0V, TJ=25°C | 2 |
| Gate Threshold Voltage | VGS(th) | 2.5 | | 4.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 0.32 | 0.38 | Ω | VGS=10V, ID=4A | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±30V, VDS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=600V, VGS=0 | 2 |
| Continuous Drain-Source Diode Forward Current | IS | | | 11 | A | | 3 |
| Diode Forward On-Voltage | VSD | | 0.9 | 1.2 | V | IS=11A, VGS=0 | 3 |
| Thermal Resistance, Junction to Case | Rth(j-c) | | | 3.57 | ℃/W | | 3 |
## CAD (KiCad official)
- Symbol: `OSD65R380`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `osd65r380-etched.step` / `osd65r380-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `osd65r380.step` / `osd65r380.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [OSEN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590920581536047104) (3 pp, sha256 `99447924dac50166`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/osd65r380-datasheet.pdf)